Preparation of a PVDF (Polyvinylidene Fluoride) Thin Film Grown by Using the Method of Electric Field Application

전계인가법을 이용한 PVDF 박막의 제작과 특성에 대한 연구

  • 장동훈 (인하대학교 전자재료공학과) ;
  • 강성준 (여수대학교 반도체ㆍ응용물리학과) ;
  • 윤영섭 (인하대학교 전자재료공학과)
  • Published : 2000.06.01


The 3$\mu\textrm{m}$-thick PVDF (Polyvinyiidene fluoride) thin film have been prepared using physical vapor deposition with electric field, and its FT-IR specrum, dielectric property and electric conduction phenomenon have been investigated. Since the characteristic peaks ate detected at 509.45 and 1273.6〔cm〕 in the FT-IR spectrum, we are confirmed that the ${\beta}$ -phase is dominant in the PVDF thin film. In the results of dielectric properties, the PVDF thin film shows anomalous dispersion, i.e. gradual decrease of dielectric constant with increase of frequency, and also that the dielectric absorption point changes from 200Hz to 7000Hz with increasing temperature of thin film, which is consistent with the Debye's theory. The activation energy (ΔH) obtained from temperature dependence of dielectric loss is 21.64 ㎉/㏖. We confirm that the electric conduction mechanism of PVDF thin film is dominated by ionic conduction by investigating the dependence of the leakage current of the thin film on the temperature and the electric field.