A Study on the SAW Characteristics of the AIN Thin Film Prepared by Reactive RF Magnetron Sputtering System

반응성 RF 마그네트론 스퍼터로 증착한 AIN 박막의 물성 및 SAW소자 특성에 관한 연구

  • Published : 2004.02.01


AIN thin film has been deposited on the $AI_2$$O_3$substrate with reactive radio frequency( RF) magnetron sputtering method. In this work, elelctromechanical coupling coefficient of AIN thin film was increased with an increase of AIN thin film thickness, and the maximum value was 0.11%. Insertion loss of SAW device was decreased with an increase of AIN thin film thickness and the minimum value was 33[㏈]. SAW velocity of IDTs/AIN/$AI_2$$O_3$structure and IDTs/AIN/$AI_2$$O_3$/Si structure were about 5480[㎧]and 5040[㎧]respectively.



  1. G.F. Iriate, F. Engelmann, I.V. Katerdjiev, 'Reactive sputter deposition of highly oriented AIN films at room temperature' J. Mater. Res. 17 (2002), pp.1469 https://doi.org/10.1557/JMR.2002.0218
  2. H. Okano, N. Tanaka, Y. takahashi, T. Tanaka, K. Shibata, 'Preparation of aluminum nitride thin films by reactive sputtering and their applications to GHz-band surface acoustic wave devices' Appl. Phys. Lett. 64(2) (1994), pp.166-168 https://doi.org/10.1063/1.111553
  3. T. Shiosaki, T. Yamamoto, T. Oda, A. Kawabata, 'Low-temperature growth of piezoelectric AIN film by rf reactive planar magnetron sputtering' Appl. Phys. Lett. 36 (1980), pp643 https://doi.org/10.1063/1.91610
  4. S. Middelhoek, S.A. audet. 'Silicon Sensors' Academic Press (1989), London
  5. J. Edwards, K. Kawabe, S. Stevens, R.H.Tredgold, 'Space charge conduction and electrical behaviour of aluminium nitride single crystal' Solid State Communications Vol. 3 (1965), pp. 99-100 https://doi.org/10.1016/0038-1098(65)90231-0
  6. V.W. L. Chin, T.L. Tansley, T. Osotchan, 'Electron mobilties in gallium, indium, and aluminum nitrides' J. Appl. Phys. 75(11) (1994), pp. 7365-7372 https://doi.org/10.1063/1.356650
  7. H. Yamashita, K. Fukui, S. MIsawa, S. Yoshida, 'Optical properties of AIN epitaxial thin films in the vacuum ultraviolet region' J. Appl. Phys. 50 (1979), pp.896 https://doi.org/10.1063/1.326007
  8. G. Carlotti, F.S. Hickernell, H.M. Liaw, L. Palmieri, G. Socino, and E. Verona, 'The elestic constants of sputtered aluminum nitride films.' Proc. 1995 IEEE Ultrason. symp. (1995), pp 353-356 https://doi.org/10.1109/ULTSYM.1995.495597
  9. Xinjiao, Li, Xu Zechuan, He Ziyou, Cao Huazhe, Su Wuda, Chen Zhongcai, Zhou Feng, Wang Enguang, 'On the properties of AIN thin films grown by low temperature reactive r.f. sputtering' Thin Solid Films 139, 3 (1986), pp. 261-274 https://doi.org/10.1016/0040-6090(86)90056-8
  10. Glen A. Slack, R.A. Tanzilli, R.O. Pohl, and J. W. Vandersande, 'The intrinsic thermal conductivity of AIN' J. App. Phys. 76, 3 (1994), pp. 1363-1398 https://doi.org/10.1063/1.358463
  11. Tilo P.Drusedau, Jurgen Blasing, Thin Solid Films 377-378 (2000), pp27-31 https://doi.org/10.1016/S0040-6090(00)01380-8
  12. A. Mahmood, R. Machorro, S. Muhl, J. Heiras, F.F. Castillon, M.H. Farias, E. Andrade, Diamond and Related Materials 12 (2003), pp. 1315-1321 https://doi.org/10.1016/S0925-9635(03)00076-1
  13. W.M. Yim and R.J. Paff, 'Thermal expansion of AIN, sapphire and silicon' J. Appl. Phys. 45(3) (1974), 1456-1457 https://doi.org/10.1063/1.1663432
  14. H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, b. Sverdlov, an M. Burns, 'Large-band-gap SiC, III-V nitride, and II-VI AnSe-based semiconductor device technologies', J. Appl. Phys. 76(3) (1994), PP.1363-1398 https://doi.org/10.1063/1.358463
  15. B.C. Ko, J.W. Son, K.S. Kim, M. S. Eum, C. W. Nam, K. C. Lee, The Korean Institute Of Electrical Engineers, 52C-7-3 (2003), pp. 288-292
  16. Victor Plessky, 'Coupling-Of-Modes analysis of SAW devices' International Journal of High Speed Electronics and Systems, Vol. 10, No. 4(2000), pp.867-947 https://doi.org/10.1142/S0129156400000684
  17. D. G. Kipshidze, H. P. Schenk, A. Fissel, U. Kaiser, J. Schulze, Wo. Richter, M. Weihnacht, R. Kunze, J. Krausslich, 'Molecular-beam epitaxy of a strongly lattice-mismatched heterosystem AIN/Si(111) for application in SAW devices' American Institute of Physics, 33(11) (1999), pp.1241-1246
  18. O. Elmazria, V. Mortet, M.E. Hakiki, M. Nesladek, P. Alnot, 'High Velocity SAW Using Aluminum Nitride Film on Unpolished Nucleation Side of Free-Standing CVD Diamond' IEEE. Trans. Ultrason., Ferroelect., Freq. Contr., vol. 50, no. 6 (2003), pp. 710-716
  19. J. H. Hines, D. C. Malocha, 'A simple transducer equivalent circuit parameter extraction technique' Proc. IEEE. Ultrason. Symp. (1993), pp 173-177 https://doi.org/10.1109/ULTSYM.1993.339683
  20. C. Caliendo, g. Saggio, P. Verardi, E. Verona, 'Piezoelectric AIN film for SAW devices applications' IEEE. Ultrason. Symp. (1993), pp. 249-252 https://doi.org/10.1109/ULTSYM.1993.339578
  21. IEEE. Ultrason. Symp. Piezoelectric AIN film for SAW devices applications C.Caliendo;g.Saggio;P.Verardi;E.Verona