STI CMP용 가공종점 검출기술에서 나노 세리아 슬러리 특성이 미치는 영향

Effect of the Nano Ceria Slurry Characteristics on end Point Detection Technology for STI CMP

  • 김성준 (한양대학교 나노 SOI 공정 연구실) ;
  • 강현구 (한양대학교 나노 SOI 공정 연구실) ;
  • 김민석 (한양대학교 나노 SOI 공정 연구실) ;
  • 백운규 (한양대학교 세라믹학과) ;
  • 박재근 (한양대학교 나노 SOI 공정 연구실)
  • 발행 : 2004.03.01


Through shallow trench isolation (STI) chemical mechanical polishing (CMP) tests, we investigated the dependence of pad surface temperature on the abrasive and additive concentrations in ceria slurry under varying pressure using blanket film wafers. The pad surface temperature after CMP increased with the abrasive concentration and decreased with the additive concentration in slurries for the constant down pressure. A possible mechanism is that the additive adsorbed on the film surfaces during polishing decreases the friction coefficient, hence the pad surface temperature gets lower with increasing the additive concentration. This difference in temperature was more remarkable for the higher concentration of abrasives. In addition, in-situ measurement of spindle motor was carried out during oxide and nitride polishing. The averaged motor current for oxide film was higher than that for nitride film, meaning the higher friction coefficient.