RF 마그네트론 스퍼터링을 이용한 Si 기판상의 AlN 박막의 제조

Preparation of AlN thin films on silicon by reactive RF magnetron sputtering

  • 조찬섭 (상주대학교 전자전기공학부) ;
  • 김형표 (상주대학교 전자전기공학부)
  • 발행 : 2004.06.01


Aluminum nitride(AlN) thin films were deposited on silicon substrate by reactive RF magnetron sputtering without substrate heating. We investigated the dependence of some properties for AlN thin film on sputtering conditions such as working pressure, $N_2$ concentration and RF power. XRD, Ellipsometer and AES has been measured to find out structural properties and preferred orientation of AlN thin films. Deposition rate of AlN thin film was increased with an increase of RF power and decreased with an increase of $N_2$ concentration. AES in-depth measurements showed that stoichiometry of Aluminium and Nitrogen elements were not affected by $N_2$ concentration. It has shown that low working pressure, low $N_2$ concentration and high RF power should be maintained to deposit AlN thin film with a high degree of (0002) preferred orientation.