# Structural Properties of SCT Thin Film with Deposition and Annealing Temperature

• 김진사 (광운대학교 전기공학과)
• Kim, Jin-Sa (Dept. of Electrical Engineering, KwangWoon University)
• 발행 : 2007.09.30

#### 초록

The (SrCa)$TiO_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by annealing at $600[^{\circ}C]$.