Ar-Kr 혼합가스를 이용한 OLED용 Al 전극 제작

Preparation of Al electrode with Ar-Kr gas mixture for OLED application

  • 김상모 (경원대학교 전기공학과) ;
  • 장경욱 (경원대학교 전기공학과) ;
  • 이원재 (경원대학교 전자공학과) ;
  • 김경환 (경원대학교 전기공학과)
  • Kim, Sang-Mo (Department of Electrical Engineering, Kyungwon University) ;
  • Jang, Kyung-Wook (Department of Electrical Engineering, Kyungwon University) ;
  • Lee, Won-Jae (Department of Electronics Engineering, Kyungwon University) ;
  • Kim, Kyung-Hwan (Department of Electrical Engineering, Kyungwon University)
  • 발행 : 2007.12.30

초록

As preparing electrode for the OLED with the sputtering process, in order to be lower damage of the bottom organic layer and increase the life-time of the OLED, we prepared Al electrode for that by using Facing Targets Sputtering (FTS) system. Al electrode directly deposited on the cell (LiF/EML/HTL/Bottom electrode). Deposition condition was the working gas (Ar, Kr and Ar+Kr) and working gas pressure (1 and 6 mTorr). The film thickness and I-V curve of Al/cell were evaluated by a $\acute{a}$-step profiler and a semiconductor parameter (HP4156A) measurement. The thin film surface image was observed by a Atomic Force Microscope (AFM). In result, in comparison with about 11 [V] of the turn-on voltage of Al/cell with using the pure Ar gas, when Al thin film was deposited using the Ar-Kr mixture gas, the surface morphology was improved in some region and the turn-on voltage of Al/cell could be decreased to about 7 [V].

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