Properties Electric of AIN Thin Film on the Si and GaAs Substrate

Si와 GaAs기판 위에 AIN 박막의 전기적 특성

  • 박정철 (경원대학교 IT대학 전자공학) ;
  • 추순남 (경원대학교 공과대학 전기공학) ;
  • 권정렬 (명지대학교 공과대학 전기공학과) ;
  • 이헌용 (명지대학교 공과대학 전기공학과)
  • Published : 2008.01.01


To study the effects of $H_2$ gas on AIN insulation thin film, we prepared AIN thin film on Si and GaAs substrate by means of reactive sputtering method using $H_2$ gas as an additives, With treatment conditions of $H_2$ gas AIN thin film shows variable electrical properties such as its crystallization and hysterisis affected to electrical property, As a results, AIN thin film fabricated on Si substrate post-treated with $H_2$ gas for 20 minutes shows much better an insulation property than that of pre-treated, And AIN film treated with $H_2$ gas comparing to non-treated AIN film shows a flat band voltage decreasment. But In GaAs substrate $H_2$ gas does not effect on the flat band voltage.



  1. H. Okano, N. Tanaka, K. Shibata, and S. Nakano, 'Preparation of aluminum nitride thin films by reactive sputtering and their applications to GHz-band surface acoustic wave devices', Appl. Phys. Lett., Vol. 64, No. 2, p. 166, 1994
  2. 고봉철, 남창우, 'SAW 소자응용을 위한 실리 콘 기판 위에 AlN 박막의 최적 증착 조건에 관한 연구', 센서학회지, 16권, 4호, p. 301, 2007
  3. B. Monemar and G. Pozina, 'Group III-nitride based hetero and quantum structure', Prog. Quantum. Electron., Vol. 24, p. 239, 2000
  4. F. Takeda and T. Hata, Jpn. J. Appl. Phys., Vol. 19, No. 5, p. 1001, 1980
  5. A. Von Richthofen and R. Domnick, Thin Solid Films, Vol. 283, p. 37, 1996
  6. C. R. Aita, 'Basal orientation aluminum nitride grown at low temperature by rf diode sputtering', J. Appl. Phys., Vol. 53, No. 3, p. 1807, 1982
  7. X.-D. Wang, W. Jiang, M. G. Norton, and K. W. Hipps, Thins Solid Films, Vol. 251, p. 121, 1994
  8. F. Hasegawa, T. Takahashi, K. Kubo, and Y. Nannichi, Jpn. J. Appl. Phys., Vol. 26, p. 1555, 1987
  9. X. D. Wang, K. W. Hipps, and U. Mazur, Langmuir, Vol. 8, p. 1347, 1992
  10. Vacandio F., Massiani Y., and Gravier P., 'A study of the physical properties and electrochemical behaviour of aluminium nitride films', Surface and Coatings Technology, Vol. 92, p. 221, 1997
  11. A. Bourret, A. Barski, J. L. Rouviere, G. Renaud, and A. Barbier, 'Growth of aluminum Nitride on (111) silicon : Microstructure and interface structure', J. Appl. Phys., Vol. 83, p. 2003, 1998
  12. P. Limsuwan, N. Udomkan, S. Meejoo, and P. Winotai, 'Surface morphology of submicron crystals in aluminum nitride films grown by DC magnetron sputtering', Intern. J. Mod. Phys. B, Vol. 19, No. 12, p. 2073, 2005
  13. 홍성의, 한기평, 백문철, 조경익, 윤순길, 'PAMBE를 이용하여 성장된 AlN 박막의 미 세구조에 미치는 Al/N 비율영향', 전기전자재료학회논문지, 14권, 12호, p. 972, 2001
  14. H. C. Lee and J. Y. Lee, Thin Solid Films, Vol. 271, p. 50, 1995