Properties of Ge,Ga and Ga-doped ZnO thin films prepared by RF magnetron sputtering

RF magnetron sputtering으로 생성한 Ga,Ge와 Ga이 도핑된 ZnO 박막의 특성

  • 정일현 (단국대학교 화학공학과) ;
  • 김유진 (단국대학교 화학공학과) ;
  • 박정윤 (단국대학교 화학공학과) ;
  • 이루다 (단국대학교 화학공학과)
  • Received : 2010.08.18
  • Accepted : 2010.09.15
  • Published : 2010.09.30


The ZnO thin films doped with Ga(GZO) and both Ga and Ge(GZO:Ge) were deposited on glass substrate by using RF sputtering system respectively. Structural, morphological and optical properties of the films deposited in the same condition were investigated. Structural properties of the films were investigated by Field Emission Scanning Electron Microscopy, FE-SEM images and X-ray diffraction, XRD analysis. These studies showed shape of films' surface and direction of film growth respectively. It's showed that all films were deposited by vertical orientation strongly. It can be confirmed that all dopants of targets were included in deposited films by results of EDX analysis. UV-Vis spectrometer results showed that all samples had highly transparent characteristics in visible region and have similar 3.28~3.31 eV band gap. It was found that existence of all dopants by EDX analysis. Morphology and roughness of surface of each film were clearly shown by Atomic Force Microscopy, AFM images. It was found in this research that film doped with Ge more dense and stable with hardly any difference in gap energy compared to ZnO films.



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