Effect of substrate temperature on the properties of AZO thin film deposited by using facing targets sputtering system

  • Jung, Yu Sup (Department of Electrical Engineering, Gachon University) ;
  • Choi, Myung Kyu (Department of Electrical Engineering, Gachon University) ;
  • Kim, Kyung Hwan (Department of Electrical Engineering, Gachon University)
  • Received : 2011.12.22
  • Accepted : 2012.02.29
  • Published : 2012.03.31


Al doped ZnO (AZO) thin film was deposited by using Facing Target Sputtering (FTS) system. This work examined the properties of AZO thin film as a function of the substrate temperature. The sputtering targets were 4 inch diameter disks of AZO (ZnO : $Al_2O_3$ = 98 : 2 wt.% ). The properties of electrical, structural and optical were investigated by 4-point probe, Hall effect measurement, x-ray diffractometer (XRD), field-emitting scanning electron microscopy (FE-SEM), and UV/VIS spectrometer. The lowest resistivity of films was $5.67{\times}10^{-4}{\Omega}.cm$ and the average optical transmittance of the films was above 85% in the visible range.



Supported by : Gachon University


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