InP 식각정지층을 갖는 InAlAs/InGaAs/GaAs MHEMT 소자의 항복 특성 시뮬레이션에 관한 연구

Study on the Breakdown Simulation for InAlAs/InGaAs/GaAs MHEMTs with an InP-etchstop Layer

  • Son, Myung Sik (Department of Electronic Engineering, Sunchon National University)
  • 투고 : 2012.05.23
  • 심사 : 2012.06.15
  • 발행 : 2012.06.30


This paper is for accurately simulating the breakdown of MHEMTs with an InP-etchstop layer. 2D-Hydrodynamic simulation parameters are investigated and calibrated for the InP-epitaxy layer. With these calibrated parameters, simulations are performed and analyzed for the breakdown of devices with an InP-etchstop layer. In the paper, the impact-ionization coefficients, the mobility degradation due to doping concentration, and the saturation velocity for InP-epitaxy layer are newly calibrated for more accurate breakdown simulation.



  1. 김성찬, 안단, 임병옥, 백태종, 신동훈, 이진구, " 70 nm MHEMT 와 DAML 기술을 이용한 94GHz 단일 평형 혼합기", 대한전자공학회논문지, 제 43 권 SD 편, 제 4 호, pp.254-261, 2006 년 4 월.
  2. Seong-Jin Yeon, Myunghwan Park, JeHyunk Choi, and Kwangseok Seo, " 610 GHz InAlAs/In0.75GaAs Metamorphic HEMT with an Ultra-Short 15-nm-Gate, " Proc. of IEDM 2007, pp.613-616, 2007.
  3. 손명식, "InAlAs/InGaAs/GaAs 100nm-게이트 MHEMT 소자의 에피 구조 최적화 설계에 관한 연구", 반도체디스플레이기술학회지, 제 10 권, 4 호, pp.107-112, 2011 년 12 월.
  4. ISE-DESSIS manual, pp. 12-288, Ver. 9.5
  5. Gaudenzio Meneghesso, Andrea Neviani, Rene Oesterholt, Mehran Matloubian, Takyiu Liu, Julia J. Brown, Claudio Canali, "On-state and Off-state Breakdown in GaInAs/InP Composite- Channel HEMT's with Variable GaInAs Channel Thickness," IEEE Trans. On Electron Devices, vol. 46, no. 1, pp.2-9, Jan. 1999.
  6. Suman Datta, Shen Shi, Kenneth P. Roenker, Marc M. Cahay, and William E. Stanchina, "Simulation and Design of InAlAs/InGaAs pnp Heterojunction Bipolar," IEEE Trans. On Electron Devices, vol. 45, no. 8, pp.1634-1643, Aug. 1998.
  7. 최석교, 백용현, 한민, 방석호, 윤진섭,"기존의 MHEMT 와 InP 합성 채널 MHEMT 소자의 항복 특성 분석 및 비교연구", 대한전자공학회논문지, 제 44 권 SD 편, 제 12 호, pp.1-6, 2007 년 12 월.