반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

증착 온도 및 산소 유량에 따른 IZO 박막의 구조적 및 전기적 특성

Structural and Electrical Characteristics of IZO Thin Films deposited at Different Substrate Temperature and Oxygen Flow Rate

  • 한성호 (한국기술교육대학교 신소재공학과) ;
  • 이규만 (한국기술교육대학교 신소재공학과)
  • Han, Seong-Ho (Dept. of Materials Engineering, Korea University of Technology and Education) ;
  • Lee, Kyu Mann (Dept. of Materials Engineering, Korea University of Technology and Education)
  • 투고 : 2012.11.26
  • 심사 : 2012.12.18
  • 발행 : 2012.12.31
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초록

In this study, we have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IZO thin films for the organic light emitting diodes (OLED) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $O_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $O_2$ flow rate. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under $Ar+O_2$. The change of electrical resistivity with increasing flow rate of $O_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The change of electrical resistivity with increasing substrate temperature was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed the average transmittance over 83% in the visible range.

키워드

과제정보

연구 과제 주관 기관 : 한국연구재단

참고문헌

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