- Sung-Chan Kim, Dan An, Byeong-Ok Lim, Tae-Jong Beak, Dong-Hoon Shin, and Jin-Koo Rhee, "Highperformance 94 GHz Single Balanced Mixer Based On 70 nm MHEMT And DAML Technology, " Journal of The Institute of Electronic Engineers of Korea-SD, vol. 43, no. 4, pp.254-261, Apr. 2006.
- Seong-Jin Yeon, Myunghwan Park, JeHyunk Choi, and Kwangseok Seo, " 610 GHz InAlAs/In0.75GaAs Metamorphic HEMT with an Ultra-Short 15-nm-Gate, " Proc. of IEDM 2007, pp.613-616, 2007.
- Myung Sik Son, "Optimization Study on the Epitaxial Structure for 100nm-Gate MHEMTs with InAlAs/InGaAs/GaAs Heterostructure," Journal of the Semiconductor & Display Technology, vol. 10, no. 4, pp.107-112, Dec. 2011.
- ISE-DESSIS manual, pp. 12-288, Ver. 9.5
- Gaudenzio Meneghesso, Andrea Neviani, Rene Oesterholt, Mehran Matloubian, Takyiu Liu, Julia J. Brown, Claudio Canali, "On-state and Off-state Breakdown in GaInAs/InP Composite-Channel HEMT's with Variable GaInAs Channel Thickness," IEEE Trans. On Electron Devices, vol. 46, no. 1, pp.2-9, Jan. 1999. https://doi.org/10.1109/16.737434
- Suman Datta, Shen Shi, Kenneth P. Roenker, Marc M. Cahay, and William E. Stanchina, "Simulation and Design of InAlAs/InGaAs pnp Heterojunction Bipolar," IEEE Trans. On Electron Devices, vol. 45, no. 8, pp.1634-1643, Aug. 1998. https://doi.org/10.1109/16.704357
- Seok Gyu Choi, Yong-Hyun Baek, Min Han, Seok Ho Bang, Jin Seob Yoon, and Jin Koo Rhee,"Study of Composite channel Structure of Metamorphic HEMT for the Improved Device Characteristics," Journal of The Institute of Electronic Engineers of Korea-SD, vol. 44, no. 12, pp.1-6, Dec. 2007.
- Myung Sik Son, "Study on the Breakdown Simulation for InAlAs/InGaAs/GaAs MHEMTs with an InPetchstop Layer," Journal of the Semiconductor & Display Technology, vol. 11, no. 2, pp.53-57, Jun. 2012.
- Myung Sik Son, "Simulation Study on the Breakdown Enhancement for InAlAs/InGaAs/GaAs MHEMTs with an InP-Etchstop Layer," Journal of the Semiconductor & Display Technology, vol. 12, no. 3, pp.23-27, Sep. 2013.