EUV pellicle의 standoff 거리에 따른 이미지 전사 특성 평가

Evaluation on the Relationship between Mask Imaging Performance and Standoff Distance of EUV Pellicle

  • 우동곤 (한양대학교 공과대학 신소재공학과) ;
  • 홍성철 (한양대학교 공과대학 신소재공학과) ;
  • 김정식 (한양대학교 공과대학 나노 반도체 공학과) ;
  • 조한구 (나노 과학 기술연구소) ;
  • 안진호 (한양대학교 공과대학 신소재공학과)
  • Woo, Dong Gon (Department of Materials Science and Engineering, Hanyang University) ;
  • Hong, Seongchul (Department of Materials Science and Engineering, Hanyang University) ;
  • Kim, Jung Sik (Department of Nanoscale Semiconductor Engineering, Hanyang University) ;
  • Cho, Hanku (Institute of Nano Science and Technology) ;
  • Ahn, Jinho (Department of Materials Science and Engineering, Hanyang University)
  • 투고 : 2016.02.16
  • 심사 : 2016.03.23
  • 발행 : 2016.03.31


Extreme ultraviolet (EUV) pellicle is one of the most concerned research in the field of EUV lithography (EUVL). Imaging performance of EUV mask with pellicle should be investigated prior to high volume manufacturing (HVM) of EUVL. In this paper, we analyzed the relationship between standoff distance and imaging performance of EUV mask to verify the influences of relative standoff distance on imaging performance. As a result, standoff distance of EUV pellicle has no effect on imaging performance of EUV mask such as critical dimension (CD), normalized image log slope (NILS) and image contrast. Therefore, pellicle support structure can be flexibly designed and modified in diverse ways to complement the thermal limitation of EUV pellicle membrane.



연구 과제 주관 기관 : 한국연구재단 (National Research Foundation of Korea, NRF)


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