반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

XRD 분석에 의한 결정구조와 PL 분석에 의한 광학적 특성의 상관성

Relationship between Optical Properties Analyzed by Photoluminance of Bonding Structure Analyzed by X-ray Diffractometer

  • Oh, Teresa (Division of Semiconductor Engineering, Choengju University)
  • 투고 : 2016.03.11
  • 심사 : 2016.03.23
  • 발행 : 2016.03.31
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초록

GZO films prepared on ITO glasses were annealed at various temperatures in a vacuum condition to research the relationship between oxygen vacancies and optical properties. GZO films after annealing in a vacuum showed the various optical-chemical properties depending on the annealing temperatures and oxygen gas flow rate during the deposition. The oxygen vacancy of GZO film prepared by oxygen gas flows of 22 sccm increased with increasing the annealing temperatures, because of the extraction of oxygen by the annealing. But the intensity of photoluminance of GZO with 22 sccm decreased in accordance with the annealing temperature, because of the reduction of ionized charge carriers. The oxygen vacancy by the extraction of oxygen enhanced a depletion, so the widen depletion had the strong Schottky barrier and the PL intensity due to the low carrier density decreased.

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과제정보

연구 과제 주관 기관 : 청주대학교

참고문헌

  1. Teresa Oh, "Electrical Characteristics of Thin Film Transistor According to the Schottky Contacts," Korean Journal of Materials Research, Vol.24, pp.135-139, 2014. https://doi.org/10.3740/MRSK.2014.24.3.135
  2. Jung Whan Ko, Bo Young Jung and Teresa Oh, "Annealing Effect with Various Ambient Conditions of ITO Thin Film", Journal of the Semiconductor & Display Technology, Vol. 14, No. 4.pp. 20-24 (2015)
  3. Yoo Duk-yean, Kim Hyoung-ju, Kim Jun-yeong, Jo Jung-yol, "Current Variation in ZnO Thin-Film Transistor under Different Annealing Conditions," Journal of the Semiconductor & Display Technology Vol .13, pp.63-66, No.1, 2014.
  4. T. Oh, "Ohmic Contact Effect and Electrical Characteristics of ITO Thin Film Depending on SiOC Insulator" Korean J. Mater. Res. Vol. 25, No. 7 1149-1154 (2015).
  5. Janotti and C. Van de Walle, "New insights into the role of native point defects in ZnO", J. Cryst. Growth, Vol. 287, pp. 58-65, 2006. https://doi.org/10.1016/j.jcrysgro.2005.10.043
  6. T. Oh, Tunneling Phenomenon of amorphous Indium- Gallium-Zinc-Oxide Thin Film Transistors for Flexible Display, EML Vol. 11. pp.853-861 (2015)
  7. Jang-Yeon Kwon, Do-Joong Lee and Ki-Bum Kim, Transparent amorphous oxide semiconductor thin film transistor, Electronic Mate. Lett. Vol. 7/1, pp. 1- 11, 2011.
  8. T. Oh, Tunneling condition at high Schottky barrier and ambipolar transfer characteristics in zinc oxide semiconductor thin film transistor, Materials Research Bulletin, vol. 77, pp. 1-7 (2016) https://doi.org/10.1016/j.materresbull.2015.11.038
  9. Meng Yu, Jungyol Jo,"Sputtering Growth of ZnO Thin-Film Transistor Using Zn Target," Journal of the Semiconductor & Display Technology, Vol. 13, pp.35-38 No. 3, 2014.
  10. T. Oh and C. K. Choi, Comparison between SiOC Thin Films Fabricated by Using Plasma Enhance Chemical Vapor Deposition and $SiO_2$ Thin Films by Using Fourier Transform Infrared Spectroscopy. Journal of the Korean Phys. Soc. 56, 1150-1155 (2010). https://doi.org/10.3938/jkps.56.1150
  11. Sungyong Kim and Sangjik Kwon, High Conductive Transparent Electrode of ITO/Ag/i-ZnO by In-Line Magnetron Sputtering Method, Journal of the Semiconductor & Display Technology, Vol. 14, pp.33-36, 2015.