# Numerical Study on Wafer Temperature Considering Gap between Wafer and Substrate in a Planetary Reactor

• ;
• 정종완 (세종대학교 나노신소재공학과) ;
• 임익태 (전북대학교 기계설계공학부)
• Ramadan, Zaher (Mechanical Design Engineering, Chonbuk National University) ;
• Jung, Jongwan (Department of Nanotechnology and Advanced Materials Engineering, Sejong University) ;
• Im, Ik-Tae (Mechanical Design Engineering, Chonbuk National University)
• 투고 : 2017.07.24
• 심사 : 2017.09.22
• 발행 : 2017.09.30

#### 초록

Multi-wafer planetary type chemical vapor deposition reactors are widely used in thin film growth and suitable for large scale production because of the high degree of growth rate uniformity and process reproducibility. In this study, a two-dimensional model for estimating the effect of the gap between satellite and wafer on the wafer surface temperature distribution is developed and analyzed using computational fluid dynamics technique. The simulation results are compared with the results obtained from an analytical method. The simulation results show that a drop in the temperature is noticed in the center of the wafer, the temperature difference between the center and wafer edges is about $5{\sim}7^{\circ}C$ for all different ranges of the gap, and the temperature of the wafer surface decreases when the size of the gap increases. The simulation results show a good agreement with the analytical ones which is based on one-dimensional heat conduction model.

#### 과제정보

연구 과제 주관 기관 : MOTIE(Ministry of Trade, Industry & Energy, KSRC(Korea Semiconductor Research Consortium)

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