Effect of Substrate Temperature and Gas Flow Rate of Atmosphere Gases on Structural and Electrical Properties of AZO Thin Films

기판 온도와 분위기 가스에 따른 AZO 박막의 구조적 및 전기적 특성

  • Hong, Kyoung Lim (Dept. of Materials Engineering, Korea University of Technology and Education) ;
  • Lee, Kyu Mann (Dept. of Materials Engineering, Korea University of Technology and Education)
  • 홍경림 (한국기술교육대학교 에너지신소재화학공학부) ;
  • 이규만 (한국기술교육대학교 에너지신소재화학공학부)
  • Received : 2021.01.14
  • Accepted : 2021.03.10
  • Published : 2021.03.31


We have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of AZO thin films for the TCO (transparent conducting oxide). For this purpose, AZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various H2 flow rate. Experiments were carried out while varying the hydrogen gas flow rate from 0sccm to 5.0sccm in order to see how the hydrogen gas affects the AZO thin films. AZO thin films deposited at 300℃ showed amorphous structure, whereas IZO thin films deposited at room temperature showed crystalline structure having an (222) preferential orientation. The electrical resistivity of the AZO films deposited at 300℃ was 4.388×10-3Ωcm, the lowest value. As the hydrogen gas flow rate increased, the resistivity tended to decrease.


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