Plasma Corrosion and Breakdown Voltage Behavior of Ce Ion Added Sulfuric Acid Anodizing According to Electrolyte Temperature

Ce ion이 첨가된 황산 아노다이징의 온도 변화에 따른 내플라즈마 특성

  • So, Jongho (Department of Electrical Engineering, Hanyang University) ;
  • Yun, Ju-Young (Vacuum Material Measurement Team, Korea Research Institute of Standards and Science) ;
  • Shin, Jae-Soo (Department of Advanced Materials Engineering, Daejeon University)
  • 소종호 (한양대학교 전기공학과) ;
  • 윤주영 (한국표준과학연구원 진공소재측정팀) ;
  • 신재수 (대전대학교 신소재공학과)
  • Received : 2021.02.17
  • Accepted : 2021.03.16
  • Published : 2021.03.31


We report on the formation of anodic aluminum oxide (AAO) film using sulfuric acid containing cerium salt. When the temperature of the sulfuric acid containing cerium salt changes from 5 ℃ to 20 ℃, the current density and the thickness growth rate increase. The surface morphology of the AAO film change according to the temperature of the electrolytes. And that affected the breakdown voltage and the plasma etch rate. The breakdown voltage per unit thickness was the highest at 15 ℃, and the plasma etch rate was the lowest at 10 ℃ at 2.80 ㎛/h.


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