Memristive Devices Based on RGO Nano-sheet Nanocomposites with an Embedded GQD Layer

저결함 그래핀 양자점 구조를 갖는 RGO 나노 복합체 기반의 저항성 메모리 특성

  • Kim, Yongwoo (Department of System Semiconductor Engineering, Sangmyung University) ;
  • Hwang, Sung Won (Department of System Semiconductor Engineering, Sangmyung University)
  • 김용우 (상명대학교 시스템반도체공학과) ;
  • 황성원 (상명대학교 시스템반도체공학과)
  • Received : 2021.03.06
  • Accepted : 2021.03.17
  • Published : 2021.03.31

Abstract

The RGO with controllable oxygen functional groups is a novel material as the active layer of resistive switching memory through a reduction process. We designed a nanoscale conductive channel induced by local oxygen ion diffusion in an Au / RGO+GQD / Al resistive switching memory structure. A strong electric field was locally generated around the Al metal channel generated in BIL, and the local formation of a direct conductive low-dimensional channel in the complex RGO graphene quantum dot region was confirmed. The resistive memory design of the complex RGO graphene quantum dot structure can be applied as an effective structure for charge transport, and it has been shown that the resistive switching mechanism based on the movement of oxygen and metal ions is a fundamental alternative to understanding and application of next-generation intelligent semiconductor systems.

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