Characterization of Resistive Switching in PVP GQD / HfOx Memristive Devices

PVP GQD / HfOx 구조를 갖는 전도성 필라멘트 기반의 저항성 스위칭 소자 특성

  • Hwang, Sung Won (Department of System Semiconductor Engineering, Sangmyung University)
  • 황성원 (상명대학교 시스템반도체공학과)
  • Received : 2021.03.15
  • Accepted : 2021.03.17
  • Published : 2021.03.31

Abstract

A composite active layer was designed based on graphene quantum dots, which is a low-dimensional structure, and a heterogeneous active layer of graphene quantum dots was applied to the interfacial defect structure to overcome the limitations. Increasing to 1.5~3.5 wt % PVP GQD, Vf changed from 2.16 ~ 2.72 V. When negative deflection is applied to the lower electrode, electrons travel through the HfOx/ITO interface. The Al + ions are reduced and the device dominates at low resistance. In addition, as the PVP GQD concentration increased, the depth of the interfacial defect decreased, and the repetition of appropriate electrical properties was confirmed through Al and HfOx/ITO. The low interfacial defects help electrophoresis of Al+ ions to the PVP GQD layer and the HfOx thin film. A local electric field increase occurred, resulting in the breakage of the conductive filament in the defect.

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