Recently, Ball Grid Arrays(BGAs) are getting used more frequently for a package type. The connectors on a BGA consist of a large number of small solder balls in a grid shape on its bottom side. However, since balls of BGAs mounted on PCBs are not visible, inspection before mounting them is indispensable. High speed non-contact 3D measurement technologies are necessary far real-time measurement of ball height, the most important inspection item. In this paper, an accurate 3D data acquisition system for BGAs is proposed that can acquire 3D profile at high speed using a 3D smart camera and laser slit ray projection. Some clipping and morphological filtering operations are employed to remove spiky error data, which occur due to reflections from some ball area to camera direction.

One of the most important is to insure that a new circuit design is qualified far release before it is scheduled for manufacturing, test, assembly and delivery. Due to various causes, there happens to be a low yield in the wafer process. Wafer test is a critical process in analyzing the chip characteristics in the EDS(electric die sorting) using analytic tools -wafer map, wafer summary and datalog. In this paper, we propose new analytic map algorithms for DDI chip test data. Using the proposed analytic map algorithms, we expect to improve the yield, quality and analysis time.

AIN thin films were prepared on amorphous glass and $SiO_2(1{\mu}m)/Si(100)$ substrate by the facing targets sputtering (FTS) apparatus, which can provide high density plasma, a high deposition rate at a low working gas pressure. The AIN thin films were deposited at a different nitrogen gas flow rate ($1.0{\sim}0.3$) and other sputtering parameters were fixed such as sputtering power of 200w, working pressures of 1mTorr and AIN thin film thickness of 800 nm, respectively. The thickness and crystallographic characteristics of AIN thin films as a function of $N_2$ gas flow rate $[N_2/(N_2+Ar)]$ were measured by $\alpha$-step and an X-ray diffraction (XRD) instrument. And the c-axis preferred orientations were evaluated by rocking curve. In the results, we could prepared the AIN thin film with c-axis preferred orientation of about $5^{\circ}$ on substrate temperature R.T. at nitrogen gas flow rate 0.7.

This paper presents of a new type of memory cell that could potentially replace both DRAM and flash memory. The proposed device cell operates by sensing the state of about 1,000 electrons trapped between unique insulating barriers in the channel region of the upper transistor. These electrons are controlled by a side gate on the transistor, and their state in turn controls the gate of the larger transistor, providing signal gain within the memory cell. It becomes faster and more reliable memory with lower operation voltage. Moreover, the use of a multiple tunnel junction (MTJ) fur the vertical transistor can significantly improve the data retention and operation speed.

To improve the performance of organic thin film transistor, we investigated the properties of gate insulator's surface according to the leakage current by I-V measurement. The surface was treated by the dilute n-octadecyltrichlorosilane solution. The alkyl group of n-octadecyltrichlorosilane induced the electron tunneling and the electron tunneling current caused the breakdown at high electric field, consequently shifting the breakdown voltage. The 0.5% sample with an electron-rich group was found to have a large leakage current and a low barrier height because of the effect of an energy barrier lowered by, thermionic current, which is called the Schottky contact. The surface properties of the insulator were analyzed by I-V measurement using the effect of Poole-Frankel emission.

Non-contact transportation system using air cushion for the manufacturing of large-sized LCD panels was considered. Flow characteristics between air pad and glass plate was analyzed using computational fluid dynamics method to obtain optimized air pad configurations. Effects of the design variables such as hole arrays from which gas is injected, gas-feeding method into the gas supplying channels, and horizontal and vertical pitches of clusters of holes were studied. Optimized air pad unit gave evenly distributed pressure contour on the glass surface and well-suspended levitation height in the experiment.

The ATE driver to test a high speed semiconductor chip is designed by using general logic drivers instead of dedicated pin drivers. We have proposed a structure of general logic drivers using FPCA and assured its correct operation by EDA tool simulation. PCB circuit was implemented and Altera FPGA chip was programmed using DDR I/O library. On the PCB, it is necessary to place two resistors connected output drivers near to the output pin to adjust an impedance matching. We confirmed that the measured results agree with the simulated values within 5% errors at room temperature for the input signals with 800Mbps data transfer rate and 1.8V operating voltage.

The polyvinyl series organic films as gate insulators of thin film transistor(TFT) have been processed and characterized on the polyether sulphone (PES) substrates . The poly-4-vinyl phenol(PVP) and polyvinyl toluene (PVT) were used as solutes and propylene glycol monomethyl ether acetate(PGMEA) as a solvent in the formation of organic insulators. The cross-linking of organic insulators was also attempted by adding the thermosetting material, poly (melamine-co-formaldehyde) as a hardener in the compound. The electrical characteristics measured in the metal-insulator-metal (MIM) structures showed that insulating properties of PVP layers were generally superior to those of PVT layers. Among the layers of PVP series; copolymer PVP(10 wt%), 5wt% cross-linked PVP(10 wt%), copolymer PVP(20 wt%), 5 wt% cross-linked PVP(20 wt%) and 10 wt% cross-linked PVP(20 wt%), the 10 wt% cross-linked PVP(20 wt%) layer showed the lowest leakage current of 1.2 pA at ${\pm}10V$. The ms value of surface roughness and the capcitance per unit area are 2.41 and $1.76nF/cm^2$ in the case of 10 wt% cross-linked PVP(20 wt%) layer, respectively.

In this paper, a new method that monitors the quantity of particles using ion-counter in vacuum environment is introduced. In-situ particle monitoring (ISPM) system is composed by Gerdien type ion-counter (house-made), DC power supply and electrometer. The ion-counter applied by positive voltage detects only positive charged particles. Therefore the particles to be detected should be in known charge state for further data analysis. ion-counter is installed at the exhaust line of process equipment where the pressure loss is structurally low. ISPM system performance has been verified with SMPS (Scanning Mobility Particle Sizer) system. The correlation coefficient is above 0.98 at the particle size range of $20{\sim}300nm$ in diameter with identified charge distribution under $0.1{\sim}10.0$ Torr.

MgO thin films were prepared through electron-beam deposition onto ITO-coated glass substrates in order to measure electrical, dielectric, and microstructural properties. Design of experiments was performed in this study with the aim to understanding of the effects of processing variables, e.g., substrate temperature and filament current of an e-beam evaporator statistically. Leakage currents, relative dielectric constants, and diffraction intensities of MgO thin films were analyzed statistically, following the analysis procedure provided in the design of experiments. The leakage current level of MgO thin films has been found to be statistically significant at the level of $\alpha=0.1$.