• Title/Summary/Keyword: AIN

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Effects of Deposition Conditions on Properties of AIN Films and Characteristics of AIN-SAW Devices (다양한 증착변수에 따른 AIN 박막의 물성 및 SAW 소자의 특성 분석)

  • 정준필;이명호;이진복;박진석
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.8
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    • pp.319-324
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    • 2003
  • AIN thin films are deposited on Si (100) and $SiO_2$/Si substrates by using an RF magnetron sputtering method and by changing the conditions of deposition variables, such as RF power, $N_2$/Ar flow ratio, and substrate temperature ($T_sub$). For all the deposited AIN films, XRD Peak patterns are monitored to examine the effect of deposition condition on the crystal orientation. Highly (002)-oriented AIN films are obtained at following nominal deposition conditions; RF Power : 350W, $N_2$/Ar ratio = 10/20, T$_{sub}$ : $250^{\circ}C$, and working pressure = 5mTorr, respectively. AIN-based SAW devices are fabricated using a lift-off method by varying the thickness of AIN layer. Insertion losses and side-lobe rejection levels of fabricated SAW devices are extracted from their frequency response characteristics, which are also compared in terms of AIN thickness and substrate. Relationships between the film properties of AIN films and the frequency responses of SAW devices are discussed. It is concluded from the experimental results that the (002)-preferred orientation as well as the surface roughness of AIN film may play a crucial role of determining the device performances of AIN-SAW devices.s.

The design of AIN SDF Server about the application of the X.500 for supporting the SCF/SDF in AIN (AIN에서 SCF/SDF 인터페이스에 X.500 적용을 위한 AIN SDF Server 설계)

  • Park, Mun-Seong;O, Ju-Byeong;Jin, Byeong-Un;Kim, Hye-Gyu;Park, Seong-Yeol
    • The Transactions of the Korea Information Processing Society
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    • v.2 no.5
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    • pp.655-666
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    • 1995
  • Advanced Intelligent Network(AIN) and X.500 directory service have similarity in between. X.500 capabilities and the requirements for the Service Control Function(SCF) to Service Data Function(SDF) in AIN. As an interface, SCF can be mapping as a Directory User Agent(DUA) and SDF can be mapping as a Directory System Agent(DSA). Based on the concepts, X.500 directory can be applied to AIN. In this paper we suggest to apply the X.500 DSP to the SDF/SDF interface to perform a distribution function. Also we show that the SCF-SDF/SDF-SDF relationship can be possible under applying X.500 DAP/DSP within the set of Capability Set 1 (CS1),CS2 and CS3. Finally, based on the above contents, we introduce the designed schematic of AIN SDF Server System for a distributed processing in AIN and design the X.500 schema of Universal Personal Telecommunication(UPT) service for supporting AIN SDF Server.

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A Study on the SAW Characteristics of the AIN Thin Film Prepared by Reactive RF Magnetron Sputtering System (반응성 RF 마그네트론 스퍼터로 증착한 AIN 박막의 물성 및 SAW소자 특성에 관한 연구)

  • 고봉철;전순배;황영한;김재욱;남창우;이규철
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.2
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    • pp.73-78
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    • 2004
  • AIN thin film has been deposited on the $AI_2$$O_3$substrate with reactive radio frequency( RF) magnetron sputtering method. In this work, elelctromechanical coupling coefficient of AIN thin film was increased with an increase of AIN thin film thickness, and the maximum value was 0.11%. Insertion loss of SAW device was decreased with an increase of AIN thin film thickness and the minimum value was 33[㏈]. SAW velocity of IDTs/AIN/$AI_2$$O_3$structure and IDTs/AIN/$AI_2$$O_3$/Si structure were about 5480[㎧]and 5040[㎧]respectively.

Properties Electric of AIN Thin Film on the Si and GaAs Substrate (Si와 GaAs기판 위에 AIN 박막의 전기적 특성)

  • Park, Jung-Cheul;Chu, Soon-Nam;Kwon, Jung-Youl;Lee, Heon-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.1
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    • pp.5-11
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    • 2008
  • To study the effects of $H_2$ gas on AIN insulation thin film, we prepared AIN thin film on Si and GaAs substrate by means of reactive sputtering method using $H_2$ gas as an additives, With treatment conditions of $H_2$ gas AIN thin film shows variable electrical properties such as its crystallization and hysterisis affected to electrical property, As a results, AIN thin film fabricated on Si substrate post-treated with $H_2$ gas for 20 minutes shows much better an insulation property than that of pre-treated, And AIN film treated with $H_2$ gas comparing to non-treated AIN film shows a flat band voltage decreasment. But In GaAs substrate $H_2$ gas does not effect on the flat band voltage.

Deposition of AIN Thin Films by Single Ion Beam Sputtering (단일 이온빔 스퍼터링법을 이용한 AIN 박막의 증착)

  • 이재빈;주한용;이용의;김형준
    • Journal of the Korean Ceramic Society
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    • v.34 no.2
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    • pp.209-215
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    • 1997
  • Aluminum nitride(AIN) thin films were deposited by reactive single ion beam sputtering using N2 or NH3 as reactive gas. The structural, compositional and optical properties of AIN thin films were characterized by XRD, GAXRD, TEM, SEM, XPS UV/VIS spectrophotometer, and FT-IR. All the deposited AIN thin films were amorphous by the analysis fo XRD and GAXRD. However, TEM analysis showed that AIN nano-crystallites were uniformly distributed in the films. The presence of Al-N bonds were also confirmed by FT-IR and XPS analyses. The optical bandgap of AIN films increased up to 6.2 eV and the transmittance was a-bout 100% in visible range with approaching the stoichimetric composition. Irrespective of using N2 or NH3 as reactive gas, the deposited AIN thin films had very smooth surface morphologies. Their refractive index ranged from 1.6 to 1.7.

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The Characteristic of Passive Elements on Aluminum Nitride Substrate (AIN 기판의 수동 소자 특성)

  • Kim, Seung-Yong;Yook, Jong-Min;Nam, Choong-Mo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.2
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    • pp.257-262
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    • 2008
  • In this paper, the key parameters of $CO_2$ laser(focus depth, air blow rate, total laser beam time, number of pulse) are experimented for thru-hole and scribing line on AIN(aluminum nitride) substrate with high thermal conductivity. And, microstrip line & spiral planar inductor are fabricated on AIN substrate using 5 um Cu-plating with self-masking technique. The microstrip line of AIN has 0.1 dB/mm attenuation at 10 GHz and 6 nH spiral planar inductor has 56 maximum quality factor at 1 GHz. Thus, the AIN substrate is promising for GHz applications of high power area.

The preparation and characteristics of the AIN thin film by the rative sputtering method (반응성 스퍼터링 방법에 의한 AIN 박막의 제작과 특성)

  • 정성훈;송복식;홍필영;문동찬;김선태
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.23-26
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    • 1996
  • 고주파 스퍼터링 방법에 의하여 상온에서 Si(100)기판 위에 AIN막을 형성하였다. 기판의 온도, 고주파 출력, 스퍼터링 시간, 질소의 비율을 변화인자로 해서 각 조건하에서 제작된 AIN의 결정질을 X선 회절법, 적외선 분광법, 전자현미경으로 상호비교 하였다. 자외선 투과법에 의해, 제작된 AIN 막의 금지대 폭은 4.27eV 이었다. 질소 비율에 따른 AIN 막두께의 변화는 질소비율 40∼60%에서 급격하게 일어났다.

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Studies on the Development of TiAIN/CrN Multi-layered Thin Films by Unbalanced Magnetron Sputtering Process (비대칭 스퍼터링에 의한 TiAIN/CrN 나노 다층 박막의 합성 및 특성 분석에 관한 연구)

  • Kim, Gwang-Seok;Kim, Bom-Sok;Lee, Sang-Yul
    • Journal of the Korean institute of surface engineering
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    • v.38 no.6
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    • pp.207-211
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    • 2005
  • In this work a multi-layered nanostructured TiAIN/CrN superlattice coatings was synthesized using closed-field unbalanced magnetron sputtering method and the relationships between their superlattice period (1), micro-structure, hardness and elastic modulus were investigated. In addition, wear test at $500^{\circ}C$ and oxidation resistance test at $900^{\circ}C$ were performed to investigate high temperature properties of these thin films. The coatings were characterized in terms of microstructure and mechanical properties by transmission electron microscopy (TEM) and nano-indentation test. Results from TEM analysis showed that superlattice periods was inversely proportional to the jig rotation speed. The maximum hardness and elastic modulus of 37 GPa and 375 GPa were observed at superalttice period of 6.1 nm and 4.4 nm, respectively. An higher value of microhardness from TiAIN/CrN thin films than either TiAIN (30 GPa) or CrN (26 GPa) was noted while the elastic modulus was approximately an average of TiAIN and CrN films. These enhancement effects in superlattice films could be attributed to the resistance to dislocation glide across interface between the CrN and TiAIN layers. Much improved plastic deformation resistance ($H^3/E^2$) of 0.36 from TiAIN/CrN coatings was observed, compared with 0.15 and 0.16 from TiAIN and CrN, respectively. Also the wear resistance at $500^{\circ}C$ was largely increased than those of single TiAIN and CrN coatings and TiAIN/CrN coatings showed much reduced weight gain after exposure at $900^{\circ}C$ for 20 hours.

Highly filled AIN/epoxy composites for microelectronic encapsulation (반도체 봉지용 고충진 AIN/Epoxy 복합재료)

  • 배종우;김원호;황영훈
    • Proceedings of the Korean Society For Composite Materials Conference
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    • pp.131-134
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    • 2000
  • Increased temperature adversely affects the reliability of a device. So, package material should have high thermal diffusion, i.e., high thermal conductivity. And, there are several other physical properties of polymeric materials that are important to microelectronics packaging, some of which are a low dielectric constant, a low coefficient of thermal expansion (CTE), and a high flexural strength. In this study, to get practical maximum packing fraction of AIN (granular type) filled EMC, the properties such as the spiral flow, thermal conductivity, CTE, and water resistance of AIN-filled EMC (65-vol%) were evaluated according to the size of AIN and the filler-size distribution. Also, physical properties of AIN filled EMC above 65-vol% were evaluated according to increasing AIN content at the point of maximum packing fraction (highly loading condition). The high loading conditions of EMC were set $D_L/D_S$=12 and $X_S$=0.25 like as filler of sphere shape and the AIN filled EMC in this conditions can be obtained satisfactory fluidity up to 70-vol%. As a result, the AIN filled EMC (70-vol%) at high loading condition showed improved thermal conductivity (about 6 W/m-K), dielectric constant (2.0~3.0), CTE(less than 14 ppm/$^{\circ}C$) and water resistance. So, the AIN filled EMC (70-vol%) at high loading condition meets the requirement fur advanced microelectronic packaging materials.

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Microstructure and thermal conductivity of AIN ceramics with ${Y_2}{O_3}$ fabricated by pressureless sintering (상압 소결법으로 제조된 이트리아 첨가 질화 알루미늄 세라믹스의 미세 구조 및 열전도도)

  • Chae, Jae-Hong;Park, Joo-Seok;Ahn, Jong-Pil;Kim, Kyoung-Hun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.19 no.1
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    • pp.33-38
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    • 2009
  • The effect of ${Y_2}{O_3}$ as a sintering additive on thermal conductivity and microstructure of pressureless sintered AIN ceramics was investigated at sintering temperature range from 1,700 to $1,900^{\circ}C$. ${Y_2}{O_3}$ added AIN specimens showed higher densification rate than pure AIN because of the formation of the yttrium aluminates secondary phase by reaction of ${Y_2}{O_3}$ and ${Al_2}{O_3}$ of AIN surface. The thermal conductivity of AIN specimens was promoted by the addition of ${Y_2}{O_3}$ in spite of the formation of secondary phase in AIN gram boundaries and grain boundary triple junction, because ${Y_2}{O_3}$ addition could reduced the oxygen contents in AIN lattice which is primary factor of thermal conductivity. The them1al conductivity of AIN specimens was promoted by increasing sintering time because the increases of average grain size and the elimination of secondary phases from the grain boundary due to the evaporation. Particularly. the thermal conductivity of AIN specimen sintered at $1,900^{\circ}C$ for 5 hours improved over 20 %. $141\;Wm^{-1}K^{-1}$, compared with the specimen sintered at $1,900^{\circ}C$ for 1 hour.