• Title/Summary/Keyword: AIN

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Preparation of Porous $Al_2O_3$-AIN-Mullite and $Al_2O_3$-AIN-SiC

  • Kim, Byung-Hoon;Na, Yong-Han
    • The Korean Journal of Ceramics
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    • v.1 no.3
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    • pp.147-151
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    • 1995
  • Porous composite of $Al_2O_3$ and AIN based mullite and SiC can be prepared by alumium reaction synthesis and atmosphere controllied sintering in order to improve the durability of a gas filter body. The porous $Al_2O_3$-AIN-mullite, which has a strength of 168 kg/$\textrm{cm}^2$ and porosity of 51.59%, could be obtained by stmospheric firing at $1600^{\circ}C$ and the porous $Al_2O_3$-AIN-SiC with a porosity of 33% and strength of 977 kg/$\textrm{cm}^2$, could also be prepared. The average pore size has been changed from 0.2$\mu\textrm{m}$ in a reduction atmosphere and to 2$\mu\textrm{m}$ in an air atmosphere, respectively.

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Effect of AIN Buffers by R. F. Sputter on Defects of GaN Thin films (R. F. Sputter법으로 성장된 AIN 완충층이 GaN 박막결함에 미치는 영향)

  • 이민수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.5
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    • pp.497-501
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    • 2004
  • The crystal structure of the GaN film on the AIN buffer layer grown by R. F sputtering with different thickness has been studied using X-ray scattering and transmission electron microscopy(TEM). The interface roughness between the AIN buffer layer and the epitaxial GaN film, due to crossover from planar to island grains, produced edge dislocations. The strain, coming from lattice mismatch between the AIN buffer layer and the epitaxial GaN film, produced screw dislocations. The density of the edge and screw dislocation propagating from the interface between the GaN film and the AIN buffer layer affected the electric resistance of GaN film.

Effect of AIN on properties of materials for spectacle lens cutting (AIN첨가가 안경렌즈 절삭용 재료특성에 미치는 영향)

  • Lee, Young ll
    • Journal of Korean Ophthalmic Optics Society
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    • v.7 no.1
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    • pp.25-27
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    • 2002
  • To improve the properties of materials for spectacle lens cutting. AIN was included as a sintering additive. The amount of AIN was 0, 1, 3, 5 wt% and materials for spectacle lens cutting were fabricated by hot-pressing at $1830^{\circ}C$ for 2h. Microstructure was consisted of equiaxed SiC and elongated TIC. Typical fracture toughness and hardness of materials for spectacle lens cutting with AIN $4.8MPa{\cdot}m^{1/2}$ and 15.3 GPa, respectively.

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Preparation of AIN piezoelectric thin film for filters (필터용 AIN 압전 박막의 제작)

  • Keum Min-Jong;Kim Yeong-Cheol;Seo Hwa-Il;Kim Kyung-Hwan
    • Journal of the Semiconductor & Display Technology
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    • v.5 no.1
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    • pp.13-16
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    • 2006
  • AIN thin films were prepared on amorphous glass and $SiO_2(1{\mu}m)/Si(100)$ substrate by the facing targets sputtering (FTS) apparatus, which can provide high density plasma, a high deposition rate at a low working gas pressure. The AIN thin films were deposited at a different nitrogen gas flow rate ($1.0{\sim}0.3$) and other sputtering parameters were fixed such as sputtering power of 200w, working pressures of 1mTorr and AIN thin film thickness of 800 nm, respectively. The thickness and crystallographic characteristics of AIN thin films as a function of $N_2$ gas flow rate $[N_2/(N_2+Ar)]$ were measured by $\alpha$-step and an X-ray diffraction (XRD) instrument. And the c-axis preferred orientations were evaluated by rocking curve. In the results, we could prepared the AIN thin film with c-axis preferred orientation of about $5^{\circ}$ on substrate temperature R.T. at nitrogen gas flow rate 0.7.

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In-Situ Synthesis of $\textrm{Si}_{3}\textrm{N}_{4}$-AIN Ceramic Composites ($\textrm{Si}_{3}\textrm{N}_{4}$-AIN 복합세라믹스의 In-Situ합성)

  • Lee, Byeong-Taek;Kim, Hae-Du;Heo, Seok-Hwan;Lee, Chan-Gyu
    • Korean Journal of Materials Research
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    • v.8 no.1
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    • pp.27-32
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    • 1998
  • In-Sit반응소결에의해 Si과 AI금속분말을 이용하여 Si$_{3}$N$_{4}$-AIN 복합세라믹스를 합성하였다. 합성된 Si$_{3}$N$_{4}$-AIN복합세라믹스의 미세조직과 결정구조를 해석하기 위해, OM, TEM, XRD및 EDX를 이용하였으며, Si$_{3}$N$_{4}$-AIN -20wt.%AIN복합세라믹스에서 Si의 질화율은 97%로 가장 높았다. Si$_{3}$N$_{4}$-AIN 복합세라믹스에서 Si의 질화율은 AI첨가량 증가에 따라 감소하였다. 대부분의 AI입자들은 다결정 AI입자들은 다결정 AIN(4-H구조)로 완전질화되었으며, 따라서 잔류 AI상은 반응소결체내에서 관찰되지 않았다. Si$_{3}$N$_{4}$의 결정구조는 $\alpha$$\beta$구조가 혼재된 상태이며, 잔류 Si입자내에서는 미소균열 및 전위가 관찰되었다. AI/Si$_{3}$N$_{4}$와 Si$_{3}$N$_{4}$ 두계면에서 이들은 거친 형상을 보이지만, 계면반응상은 관찰되지 않았다.

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Effects of Ethanol Extract from Leaves of Eleutherococcus senticosu on Hyperlipidemia in Rats (가시오갈피 잎 추출물이 흰쥐의 지질대사에 미치는 영향)

  • Park, Yu-Hwa;Kim, Hee-Yeon;Lim, Sang-Hyun;Kim, Kyung-Hee;Lee, Jeong-Hoon;Kim, Young-Guk;Ahn, Young-Sup
    • Journal of the Korean Society of Food Science and Nutrition
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    • v.41 no.3
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    • pp.333-338
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    • 2012
  • The effects of ethanol extract from leaves of Eleutherococcus senticosu were evaluated on hyperlipidemic rats. Male SD rats were divided into a normal group, control (AIN-76 diet) group, Garcinia cambogia extract group, and AIN-76 diet group supplemented with ethanol extract from Eleutherococcus senticosu (EEES). The body weight of the AIN-76 group increased, whereas those of the Garcinia and EEES groups decreased. The serum total cholesterol of the AIN-76 group increased by 28.36% compared to the normal group, but decreased by only 27.15% in the Garcinia group and 25.47% in the EEES group. The serum triglyceride level of the AIN-76 group increased by 35.04% compared to the normal group, but decreased by only 26.76% in the Garcinia group and 37.54% in the EEES group. The serum HDL-cholesterol levels of the Garcinia and EEES groups increased compared to that of the AIN-76 group. The liver and epididymal adipose tissue weights of the EEES group decreased compared to those of the AIN-76 group. In measuring the concentration of triglycerides and total cholesterol level in the liver extracts, the AIN-76 group showed significant increases compared to the normal group, whereas the Garcinia and EEES groups showed a significant decrease compared to the AIN-76 group. These results indicate that the EEES group may improve lipid metabolism and reduce fat accumulation and body weight.

Fabrication of GHz-Band FBAR with AIN Film on Mo/SiO2/Si(100) Using MOCVD (Mo/SiO2/Si(100)기판 위에 MOCVD법으로 성장시킨 AIN박막이용 GHz대역의 FBAR제작에 관한 연구)

  • Yang, Chung-Mo;Kim, Seong-Kweon;Cha, Jae-Sang;Park, Ku-Man
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.20 no.4
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    • pp.7-11
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    • 2006
  • In this paper, it is reported that film-bulk-acoustic resonator with high c-axis oriented AIN film on $Mo/SiO_2/Si(100)$ using metal-organic-chemical-vapor deposition was fabricated. The resonant frequency and anti-resonant frequency of the fabricated resonator were observed with 3.189[GHz] and 3.224[GHz], respectively. The quality factor and the effective electromechanical coupling coefficient(${k_{eff}}^2$) were measured with 24.7 and 2.65[%], respectively. The conditions of AIN deposition were substrate temperature of $950[^{\circ}C]$, pressure of 20Torr, and V-III ratio of 25000. A high c-axis oriented AIN film with $4{\times}10^{-5}[\Omega{cm}]$ resistivity of Mo bottom electrode and $4[^{\circ}]$ of AIN(0002) full-width at half-maximum(FWHM) on $Mo/SiO_2/Si(100)$ was grown successfully. The FWHM value of deposited AIN film is useful for the RF band pass filter specification for GHz-band wireless local area network.

Performance Evaluation of Ti-Al-N coated Endmill by Arc ton Plating (아크이온플레이팅에 의한 Ti-Al-N코팅 엔드밀의 성능평가)

  • 이상용;강명창;김정석;김광호
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • pp.251-254
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    • 2002
  • The technique of high speed machining is widely studied in machining field. In this study, TiAIN single-layered and TiAIN/TiN double-layered coatings were applied to end-mill by an arc ion plating technique. Their performances were comparatively studied about cutting force, tool wear, tool life and surface roughness of workpiece under high speed cutting conditions. The TiAIN single-layer coated tool showed higher wear-resistance due to its higher hardness, while the TiAIN/TiN double-layer coated tool showed better performance for high metal removal, i.e., high fled per tooth condition due to its higher toughness. The surface roughness of the workpiece was not influenced by the wear amount of coated tools.

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Crystallographic properties of AIN thin film prepared by lacing targets sputtering method (대향타겟식 스퍼터법으로 제작된 AIN 박막의 결정학적 특성)

  • 양진석;금민종;손인환;최형욱;김경환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.464-466
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    • 2000
  • AIN thin films have been prepared by reactive sputtering method, using facing targets sputtering system with a DC power supply which can deposit a high quality thin film and control deposition condition in all range of nitrogen. The crystallographic characteristics of AIN thin films on N$_2$/Ar ratio was investigated by alpha-step and X-ray diffraction. As a result, the AIN film deposited at the pressure ratio of the nitrogen of 30% revealed strong X-ray diffraction intensity under substrate temperature 25$^{\circ}C$ and applied current 0.4A.

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Characteristics of AIN thin film using RF Magnetron Sputtering (RF Magnetron Sputtering 법으로 층착된 AIN 박막의 특성)

  • 조인호;장철영;고성용;이용현
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.509-512
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    • 2001
  • Aluminum nitride(AIN) thin films were deposited on silicon substrates using RF magnetron sputtering at various deposition conditions and investigated the characteristics. It was used XRD, AES, SEM, and HP-4145B semiconductor parameter analyzer to analysis deposited AIN thin films. The deposition conditions for the good c-axis orientation were 100 W of RF power, 200$^{\circ}C$ of substrate temperature and 15 mTorr of working Pressure. The leakage current density was less then 1.3${\times}$10$\^$-7/ A/$\textrm{cm}^2$. And it was also investigated the etching properties of deposited AIN thin films for application.

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