• Title/Summary/Keyword: AIN

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Orientation Characteristics of AIN Thin Film using RF Magnetron Sputtering wish Incident Angle (입사각을 가진 RF 마그네트론 스퍼터링법으로 증착한 AIN 박막의 배향 특성)

  • 박영순;김덕규;송민종;박춘배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.395-398
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    • 2000
  • Reactive radio frequency (RF)magnetron sputter with incident angle has been used to deposit AlN thin film on a crystalline Si substrate. (002)Preferred orientation of AlN thin film has been obtained at low sputtering pressure. Also it has been shown that depostion rate of AIN thin film is affected by fraction Ar and $N_2$ partial pressure. But substrate temperature didn't affect depostion rate of AIN thin film . As sputtering pressure increased preferred orientation degraded. The internal stress changed from tensile stress to compressive stress as fraction of $N_2$ partial pressure increased. At low nitrogen partial pressure cermet$^{[1]}$ AIN thin film is obtained.

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Oxidation Resistance and Preferred Orientation of TiAIN Thin Films (TiAIN 박막의 우선방위와 내산화성)

  • Park, Yong-Gwon;Park, Yong-Gwon;Wey, Myeong-Yong
    • Korean Journal of Materials Research
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    • v.12 no.8
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    • pp.676-681
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    • 2002
  • Microstructure, mechanical properties, and oxidation resistance of TiAIN thin films deposited on quenched and tempered STD61 tool steel by arc ion plating were studied using XRD, XPS and micro-balance. The TiAIN film was grown with the (200) orientation. The grain size of TiAIN thin film decreased with increasing Al contents, while chemical binding energy increased with Al contents. When hard coating films were oxidized at $850^{\circ}C$ in air, oxidation resistance of both TiN and TiCN films became relatively lower since the surface of films formed non-protective film such as $TiO_2$. However, oxidation resistance of TiAIN film was excellent because its surface formed protective layer such as $_A12$$O_3$ and $_Al2$$Ti_{7}$$O_{15}$, which suppressed oxygen intrusion.

Initial Growth Mode and Epitaxial Growth of AIN Thin Films on $Al_2O_3(0001)$ Substrate by DC Faced Target Sputtering

  • Kim, Jin-Woo;Kang, Kwang-Yong;Lee, Su-Jae
    • The Korean Journal of Ceramics
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    • v.5 no.4
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    • pp.368-370
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    • 1999
  • Using DC faced target sputtering method we grow AIN the films on the $Al_2O_3$(0001) substrate with varying thickness(17$\AA$-1000$\AA$). We measured x-ray diffraction(XRD) profiles by synchrotron radiation($\lambda$=1.12839 $\AA$) with four circle diffractometer. The full width half maximum(FWHM) of rocking curve for the AIN (0002) diffraction of the film grown at $500^{\circ}C$ was $0.029^{\circ}$. Also, we confirmed that the stress between AIN thin film and $Al_2O_3$(0001) substrate was reduced as increasing AIN film thickness, and the critical thickness of 400~500 $\AA$, defined as a lattice constant in the film agrees with that in a bulk without stress, was obtained.

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Safety Evaluation of Genetically Modified Organisms (GMO) for a 90-day Exposure in Rats (랫드에서 유전자 재조합 식품(GMO)의 90일간 노출에 대한 안전성 평가)

  • 김태융;제정환;조성대;강경선;이영순
    • Toxicological Research
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    • v.17 no.1
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    • pp.49-57
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    • 2001
  • We performed to evaluate the safety of GMOs for a long term exposure in Sprague-Dawley (SD) rats. In this study, groups often or fifteen SD rats were fed one of the following four diets for 90 days: (1) AIN-76A rodent diet only; (2) AIN-76A rodent diet containing 5% genetically modified soybean from USA; (3) AIN-76A rodent diet containing 5% genetically non-modified soybean from USA; (4) AIN-76A rodent diet containing 5% genetically non-modified soybean from Korea. The effects of AIN-76A rodent diet containing genetically modified soybean on body weights, food uptake, water consumption, hematology, serum bio-chemistry, urinalysis, organ weights, gross findings and histopathological findings were not significantly different, compared with others. Taken together, these results suggested that genetically modified soybean did not induce any toxic effects in rats treated for 90 days.

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Genetic Variability of Antigen B among Echinococcus granulosus Egyptian Isolates

  • Tawfeek, Gihan M.;Elwakil, Hala S.;Awad, Nabil S.;EI-Hoseiny, Laila;Thabet, Hala S.;Sarhan, Rania M.;Darweesh, Samar K.;Anwar, Wagida A.
    • The Korean Journal of Parasitology
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    • v.47 no.3
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    • pp.259-264
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    • 2009
  • Genetic polymorphisms of encoding antigen B2 gene (AgB2) in Echinococcus granulosus were studied using PCR-RFLP and DNA sequencing among 20 Egyptian isolates. Five isolates from different host origins (humans, camels, pigs, and sheep) were collected and used. All examined isolates of each host group gave very similar patterns of PCR-RFLP after restriction enzyme digestion with Alul, with the gene size of approximately 140 bp and 240 bp for sheep and human isolates, and approximately 150 bp and 250 bp for pig and camel isolates. No digestion pattern was obtained after incubation of all studied isolates with EcoRI. These results reveal high intra-group homogeneity. DNA sequence analysis highlighted that human infecting strain showed 100% identity with respect to sheep infecting isolate, 96% and 99% with pig and camel infecting isolates, respectively.

Preferred Orientation and SAW Characteristics of AIN Films Deposited by Reactive RF Magnetron Sputtering (반응성 RF 마그네트론 스퍼터링 법으로 증착된 AIN박막의 우선 배향성 및 표면 탄성파 특성에 관한 연구)

  • Seo, Ju-Won;Lee, Won-Jong
    • Korean Journal of Materials Research
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    • v.7 no.6
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    • pp.510-516
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    • 1997
  • 반응성RF 마그네트론 스퍼터링 법으로 상온에서 c-축으로 우선 배향된 AIN 박막을 여러 기판 위에 증착하였다. SiO$_{2}$/Si, Si$_{3}$N $_{4}$Si, Si(100), Si(111)그리고 $\alpha$-AI$_{2}$O$_{3}$(0001) 기판에서 AIN(0002)로킹커브 피크의 표준편차는 각각 2.6˚, 3.1˚2.6˚, 2.5˚ 그리고 2.1˚ 의 값을 나타내었다. $\alpha$-AI$_{2}$O$_{3}$(0001) 기판에 증착된 AIN박막은 epitaxial 성장을 나타내었다. Si기판에 증착된 AIN박막에서 측정된 비저항과 1MHz 주파수에서 측정된 유전상수의 값은 각각 $10^{11}$Ωcm와 9.5였다. IDT/AIN/$\alpha$-AI$_{2}$O$_{3}$(0001)구저를 갖는 지연선 소자의 표면 탄성과 특성을 측정하였다. 상 속도, 전기기계 결합계수 그리고 전파손실은 H/λ가 0.17-0.5 범위에서 각각 5448-5640m/s, 0.13-0.17% 그리고 0.41-0.64dB/λ의 값을 나타내었다.다.

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Performance Analysis of an Intelligent Peripheral System in Advanced Intelligent Network (시뮬레이션을 통한 AIN IP 시스템의 호처리용량 분석)

  • Suh, Jae-Joon;Choi, Go-Bang;Yeo, Kun-Min;Jun, Chi-Hyuck
    • IE interfaces
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    • v.11 no.3
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    • pp.77-87
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    • 1998
  • Intelligent Peripheral(IP) system is to provide specialized resource functions (SRF) such as playing announcement, collecting user information, and receiving messages in the Advanced Intelligent Network (AIN). We analyze the call processing capacity of an AIN IP system being developed in ETRI through an extensive simulation using SLAM II under a variety of AIN service scenarios. We consider televoting (VOT) and universal personal telecommunication (UPT) services which are to be provided at the fit implementation of the AIN in Korea. As the performance criteria to determine the call processing capacity, processor utilization, delay and call loss probability are considered. It turns out that the major processor called SAMP is the bottleneck processor, the service response delay dominates the delay performance, and the call loss probability becomes the primary criterion in determining the call processing capacity of the AIN IP system. It is also shown that the call processing capacity of the AIN IP system is determined by the utilization of the processor and the delay performance when the VOT ratio is below 70 percent but it is determined by the call loss probability due to the lack of service channels for providing the SRF operations.

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Temperature Dependence on Electrical Characterization of Epitaxially Grown AIN film on 6H-SiC Structures (6H-SiC 위에 형성한 에피택시 AIN 박막 구조에 대한 전기적 특성의 평가온도 의존성)

  • Kim Yong-Seong;Kim Kwang-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.1
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    • pp.18-22
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    • 2006
  • Epitaxial aluminum nitride films on 6H-SiC (0001) were fabricated using reactive RF magnetron sputtering and post-deposition rapid thermal annealing. The electrical properties of AIN films depending on film thickness and measurement temperature have been observed. Full width at half maximum of AIN (0002) was $0.1204^{\circ}$ (about 430 arcsec) X-ray rocking curve results. The equivalent oxide thickness (EOT) of AIN film was estimated as about 10 nm and the leakage current density was within the order of $10^{-8} 4/cm^2$. The dielectric constant of AIN film estimated from the accumulation region of C-V curve measured at $300^{\circ}C$ was 8.3. The dynamic dielectric constant was obtained as 5.1 from J vs. 1/T plots at the temperature ranging from R.T. to $300^{\circ}C$ From above, estimation temperature dependance of the electrical properties of Al/AIN/SiC MIS devices was affirmed and useful data compilation for the reliabilities of SiC MIS is expected.