• Title/Summary/Keyword: AIN

Search Result 675, Processing Time 0.379 seconds

Phase and microstructure of hot-pressed SiC-AlN solid solutions (열간가압소결에 의한 SiC-AIN 고용체의 상 및 미세구조)

  • Chang-Sung Lim;Chang-Sam Kim;Deock-Soo Cheong
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.6 no.2
    • /
    • pp.238-246
    • /
    • 1996
  • High-density SiC-AIN solid solutions were fabricated from powder mixtures of $\beta$-SiC and AIN by hot-pressing in the 1870 to $2030^{\circ}C$ temperature range. The reaction of AIN and $\beta$-SiC (3C) powder transformed to the 2 H (wurzite) structure appeared to depend on the temperature and SiC/A1N ratio and seeds present. The crystalline phases consisted of a SiC-rich solid-solution phase and an A1N-rich solid-solution phase. At $2030^{\circ}C$ for 1 h, for a composition of 50 % AIN/50 % SiC with a seeding of $\alpha$-SiC, the complete solid solution could be obtained and the microstructures are equiaxed with a relatively homogeneous grain size of 2 H phases. The variation of the seeding of $\alpha$-SiC in SIC-A1N solid solutions could be attributed to the transformation behaviour and differences in size and shape of the grains, as well as to other factors, such as grain size distributions, compositional inhomogeneity, and structural defects.

  • PDF

Fabrications and Properties of MFIS Structures using high Dielectric AIN Insulating Layers for Nonvolatile Ferroelectric Memory (고유전율 AIN 절연층을 사용한 비휘발성 강유전체 메모리용 MFIS 구조의 제작 및 특성)

  • Jeong, Sun-Won;Kim, Gwang-Hui;Gu, Gyeong-Wan
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.38 no.11
    • /
    • pp.765-770
    • /
    • 2001
  • Metal-ferroelectric-insulator- semiconductor(MFTS) devices by using rapid thermal annealed (RTA) LiNbO$_3$/AIN/Si(100) structures were successfully fabricated and demonstrated nonvolatile memory operations. Metal-insulator-semiconductor(MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2 V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/$\textrm{cm}^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8 V, 50 % duty cycle) in the 500 kHz.

  • PDF

A Study on the Characteristic Analysis of Implemented Baseband AIN MIM Capacitor for Wireless PANs & Mobile Communication (무선PAN 및 이동통신용 기저대역 AIN MIM Capacitor의 구현과 특성분석에 관한 연구)

  • Lee, Jong-Joo;Kim, Eung-Kwon;Cha, Jae-Sang;Kim, Jin-Young;Kim, Young-Sung
    • The Journal of The Korea Institute of Intelligent Transport Systems
    • /
    • v.7 no.5
    • /
    • pp.97-105
    • /
    • 2008
  • The micro capacitors are passive elements necessary to electronic circuits and wireless portable PAN(personal area network) and Mobile Communications device modules in the baseband circuits in combination with another passive and active devices. As capacitance is proportionally increased with dielectric constant and electrode areas, in addition, inversely decreased the thickness of the dielectric material, thus thin film capacitors are generally seen as a preferable means to achieve high performance and thin film capacitors are used in a variety of functional circuit devices. In this paper, propose dielectric material as AIN(Aluminium nitride) to make micro thin film capacitor, and this capacitor has the MIM(metal-insulator-metal) structure. AIN thin films are widespread applied because they had more excellent properties such as chemical stability, high thermal conductivity, electrical isolation and so on. In addition, AIN films show low frequency response for baseband signal ranges, I-V and C-V electrical characterization of a thin film micro capacitor. The above experimental test and estimated results demonstrate that the thin film capacitor has sufficient and efficient functional performance to be the baseband range frequency of general electronics circuit and passive device applications.

  • PDF

Reaction Sintering and Thermal Conductivity of AIN Ceramics with $\textrm{Al}_2\textrm{O}_3$ Additions ($\textrm{Al}_2\textrm{O}_3$를 함유하는 AIN세라믹스의 반응소결 및 열전도도)

  • Kim, Yeong-U;Lee, Yun-Bok;Park, Sang-Hui;O, Gi-Dong;Park, Hong-Chae
    • Korean Journal of Materials Research
    • /
    • v.8 no.1
    • /
    • pp.58-63
    • /
    • 1998
  • 5-64.3mol% AI$_{2}$O$_{3}$를 함유하는 AIN(1wt% $Y_{2}$O$_{3}$)의 1650-190$0^{\circ}C$ 상압소결에 따른 치밀화 거동, 미세구조, 열전도도가 검토 되었다. XRD 분석결과, AION(5NIN \ulcorner9 AI$_{2}$O$_{3}$ ), 27R AIN다형, AIN이 소결체의 주상으로서 동정되었다. AI$_{2}$O$_{3}$ 의 함량이 증가할수록 소결체의 부피밀도는 증가 하였다. AION을 기지상으로 하는 물질($\geq$ 30mol% AI$_{2}$O$_{3}$ )인 경우는 175$0^{\circ}C$ 소결에서 최대의 부피밀도를 나타내었으며, AIN을 기지상으로 하는 경우(5mol% AI$_{2}$O$_{3}$ ) 는 소결온도가 증가할수록 밀도가 감소하였다. $Y_{2}$O$_{3}$의 존재하에서 주로 185$0^{\circ}C$이상에서 AI$_{2}$O$_{3}$ 와 AIN의 반응에 으해서 액상이 생성되었다. AION을 기지로 하는 물질의 치밀화는 주로 액상의생성 및 AION의 입성장에 의해서 지배되었으나, AIN을 기지로 하는 물질에 있어서는 1$650^{\circ}C$에서 액상이 생성되었고, 소결온도가 190$0^{\circ}C$까지 상승할 동안 AIN의 입성장은 크게 일어나지 않았다. AI$_{2}$O$_{3}$ 함량이 증가할수록 낮은 열도도를 갖는 다량의 AION 및 액상의 생성으로 인하여 소결체의열전도도는 감소 하였다. 5mol% AI$_{2}$O$_{3}$ 를 함유한 190$0^{\circ}C$ 소결체가 최대의 열전도도(77.9W/(m\ulcornerk))를 나타내었다.

  • PDF

AIN Microstructure Evalution through Hg-porosimetry (수은침투법을 이용한 AIN 미세구조연구)

  • Lee, Hae-Weon;Yoon, Bok-Gyu;Hong, Kug-Sun
    • Analytical Science and Technology
    • /
    • v.5 no.2
    • /
    • pp.217-222
    • /
    • 1992
  • An attempt was made to analyze green microstructure of AIN samples prepared by slip casting and dry pressing through Hg-porosimetry. Slip cast samples with narrow pore size distribation and high packing density showed higher sinterability and homogeneous distribution of second phase(s). Hg-porosimetry is and effective way to determine pore structure if "ink bottle" phenomenon does not occur. A comparison study with porosity measurement by quantitative microscopy showed that the effectiveness of Hg-porosimetry measurement could be extended to higher sintered density as long as pores remained open.

  • PDF

Effects of SiO2 on the High Temperature Resistivities of AIN Ceramics (SiO2 첨가가 AIN 세라믹스의 고온 비저항에 미치는 영향)

  • Lee, Won-Jin;Kim, Hyung-Tae;Lee, Sung-Min
    • Journal of the Korean Ceramic Society
    • /
    • v.45 no.1
    • /
    • pp.69-74
    • /
    • 2008
  • The effects of $SiO_2$ impurity on the high temperature resistivities of AIN ceramics have been investigated. When $SiO_2$ was added into 1 wt% $Y_2O_3$-doped AIN, DC resistivities have decreased and electrode polarizations disappeared. Impedance spectroscopy showed two semi-circles at $600^{\circ}C$, which were attributed to grain and grain boundary, respectively. $SiO_2$ doping had more significant effects on the grain resistivity than grain boundary resistivity, implying that doped Si acted as a donor in AIN lattice. In addition, voltage dependency of DC resistivity was observed, which might be related to dependency of size of grain boundary semi-circle on the bias voltage in impedance spectroscopy.

Interface Specification Modeling for Distributed Network Management Agent of IMT-2000 Based on Applicable Service Independent Building Blocks (Applicable SIB에 의한 IMT-2000 분산 망관리 에이전트의 인터페이스 스펙 모델링)

  • Park, Soo-Hyun
    • Journal of Information Technology Services
    • /
    • v.1 no.1
    • /
    • pp.119-139
    • /
    • 2002
  • It is noteworthy that IMT -2000 communication network based on All-HP/AIN(Advanced Intelligent Network) should accomodate current and future wire/wireless AIN service easily through integration and gearing AIN construction elements. In this paper. Intelligent Farmer model(I-Farmer Model) and methodology are suggested in order to solve the several problems including standardization on implementation of Q3 interface in Telecommunication Management Network(TMN) agents which is caused by heterogeneous platform environment and future maintenance. Also this paper proposes ITI algorithm transforming the system which is designed by I-Farmer model to Interface Specification Model(ISM) applying the I-Farmer model. In addition to ITI algorithm. we suggest NTS(Node to SIB) algorithm converting entity node and ILB/OLB component in agent system designed by the I-Farmer model to SIB of AIN GFP(Global Functional Plane) and to ASIB for application program.

Preparation of precision thin film resistor sputtered by magnetron (IC용 초정밀 박막저항소자의 제조와 특성연구)

  • 하홍주;장두진;조정수;박정후
    • Electrical & Electronic Materials
    • /
    • v.8 no.1
    • /
    • pp.13-20
    • /
    • 1995
  • To develope a high precision TiAIN thin film resistor, TiAIN films were deposited on A1$_{2}$03 substrates by reactive planar magnetron cosputtering from Ti and Al targets in an Ar-N$_{2}$ atmosphere. The characteristics of the TiAIN thin film were controlled by changing of the R.F. power on Ti and Al targets, and the N$_{2}$ partial pressure. The high precision TiAIN thin film resistor with TCR(Temperature Coefficient of Resistance) of less than 10ppm/.deg. C was obtained under the R.F. power condition of 160(w)/240(w) to Ti and Al targets at the N$_{2}$ partial pressure of 7*10$^{-5}$ Torr. The composition of these films were investigated by XRD, SEM and EDS.

  • PDF

Fabrications and properties of MFIS structure using AIN buffer layer (AIN 버퍼층을 사용한 MFIS 구조의 제작 및 특성)

  • 정순원;김용성;이남열;김진규;정상현;김광호;유병곤;이원재;유인규
    • Proceedings of the IEEK Conference
    • /
    • /
    • pp.29-32
    • /
    • 2000
  • Meta1-ferroelectric-insulator-semiconductor(MFIS) devices using Pt/LiNbO$_{3}$/AIN/Si structure were successfully fabricated. AIN thin films were made into metal-insulator-semiconductor(MIS) devices by evaporating aluminum in a dot array on the film surface. The dielectric constant of the AIN film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V ) characteristic is 8. The gate leakage current density of MIS devices using a aluminum electrode showed the least value of 1$\times$10$^{-8A}$ $\textrm{cm}^2$ order at the electric field of 500㎸/cm. A typica] value of the dielectric constant of MFIS device was about 23 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 500㎸/cm was about 5.6$\times$ 10$^{13}$ $\Omega$.cmcm

  • PDF