• Title/Summary/Keyword: AR

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A Study on Education Platform for Automobile Students Using AR System (AR 시스템 기반 자동차 교육 플랫폼 연구)

  • Luo, YIng;Jang, Wan-Sok;Pan, Young-Hwan
    • Journal of the Korea Convergence Society
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    • v.10 no.12
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    • pp.243-250
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    • 2019
  • With the popularization of online learning, mobile learning and blended learning model, augmented reality technology is increasingly widely applied in the field of education today. This article stresses the necessity of applying augmented reality to education by summarizing the current situation and advantages of augmented reality technology in education. Next, the author proposes a new education system-"AR+E education cloud platform system". Last, the author proposes several inspirations for the design of AR-based education software according to the observation and interview of the behaviors and preferences of the respondents.

A Study on the Magnetic Properties and Microstructures of Ni-Fe/NiO Bilayers with Various Ar Presure in NiO Deposition (NiO 증착시의 Ar 압력 변화에 따른 Ni-Fe/NiO 이층막의 자기적특성과 미세구조에 대한 연구)

  • 노재철;이두현;김용성;서수정;박경수
    • Journal of the Korean Magnetics Society
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    • v.8 no.6
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    • pp.369-373
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    • 1998
  • The exchange anisotropy between NiO antiferromagnetic layer and NiFe ferromagnetic layer has been investigated in NiFe(10 nm)/NiO(60 nm) formed by magnetron sputtering. The NiO films were sputtered from nickel oxide using R. F. poser and NiFe, Ta were deposited using D. C. power under Ar atmosphere. Above all. we studied the exchange anisotropy of Ni-Fe/NiO bilayer, and focused especially on the effect of NiO depostion condition. Our experimental data showed that the dominant factor for determining the exchange anisotropy properties was the Ar pressure during NiO deposition. The better exchange anisotropy properties were found when the NiO film was deposited at low Ar pressure probably due to the flatten interface and the epitaxial tendency of NiO grains and NiFe grains. However, as Ar pressure increased, interfacial diffusion at NiFe/NiO interface and oxygen content of NiO film increase, and consequently reduced the exchange anisotropy. We concluded that the flatten interface and relatively low oxygen content of NiO layer are dominant factors for the enhancement of the exchange anisotropy in NiFe/NiO bilayer.

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The User Experience Evaluation of VR/AR Technology in the FEM/CFD Simulation (구조/유체 시뮬레이션에서 VR/AR기술의 사용자 경험 평가)

  • Seo, Dongwoo;Park, Sangjin
    • Journal of the Korea Convergence Society
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    • v.10 no.8
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    • pp.1-7
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    • 2019
  • This study focused on the usability and the difference between VR and AR technology in the FEM/CFD simulation environments. First, this paper explains the current status and prospect of the VR/AR technology and conducted a case study on the VR and AR service in the FEM/CFD simulation environments. In addition, we made the evaluation strategies for usability by a review of previous research. And then, after Interviewers participants who use of simulation at a specific site C to we investigated the usability of the VR and AR service based on the mobile device in the FEM/CFD simulation environments. The result of this study is look forward to be used as a design service to form a VR and AR service in the future.

The Study on Geology and Volcanism in Jeju Island (I): Petrochemistry and $^{40}Ar/^{39}Ar$ Absolute ages of the Subsurface Volcanic Rock Cores from Boreholes in the Eastern Lowland of Jeiu Island (제주도의 지질과 화산활동에 관한 연구 (I): 동부지역 저지대 시추코어 화산암류의 암석화학 및 $^{40}Ar/^{39}Ar$ 절대연대)

  • Koh, Gi-Won;Park, Jun-Beom;Park, Yoon-Suk
    • Economic and Environmental Geology
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    • v.41 no.1
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    • pp.93-113
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    • 2008
  • This study presents petrochemistry and $^{40}Ar/^{39}Ar$ absolute ages of subsurface volcanic rock cores from twenty(20) boreholes in the eastern lowland (altitude loom below) of Jeju Island, Handeong-Jongdal-Udo-Susan-Samdal-Hacheon areas, and discusses topography and volcanism in the area. The subsurface volcanic rock cores are mainly basalts in composition with minor tholeiitic andesites and basaltic trachyandesites. Sequences of intercalated tholeiitic, transitional and alkalic lavas suggest that tholeiitic and transitional to alkalic lavas must have erupted contemporaneously. Especially, occurrences of trachybasalts and basaltic trachyandesites at the bases in the area imply that the volcanism in the area was initiated with slightly differentiated alkaline magma activity. The $^{40}Ar/^{39}Ar$ absolute ages of the subsurface volcanic rock cores range from $526{\pm}23ka\;to\;38{\pm}4Ka$. The lava-forming Hawaiian volcanic activities of the eastern lowland can be divided into five sequences on the basis of sediment distribution, whole rock geochemistry and $^{40}Ar/^{39}Ar$ absolute ages of the subsurface volcanic rock cores; stage I-U$(550{\sim}400Ka)$, stage II$(400{\sim}300Ka)$ and stage III$(300{\sim}200Ka)$ during syn-depositional stage of Seoguipo Formation, and stage IV$(200{\sim}100Ka)$ and stage V(younger than 100Ka) during post-depositional stage. In the eastern lowland of Jeju Island, compositional variations and local occurrences of the subsurface volcanic rocks as well as existences of various intercalated sediment layers (including hydrovolcanogenic clasts) suggest that the volcanism must have continued for long time intermittently and that the land has been progressively glowed from inland to coast by volcanic activities and sedimentation. It reveals that the subsurface volcanic rocks in the eastern lowland of Jeju Island must have erupted during relatively younger than 200Ka of stages IV and V. The results of this study are partly in contrast with those of previous studies. This study stresses the need that previous reported volcanic activities in Jeju Island based on K-Ar ages of volcanic rocks should be carefully reviewed, and that stratigraphic correlation from boreholes should be conducted by quantitative criteria combined with petrography and petrochemstry as well as radiometric studies of volcanic rock cores.

A Study on the Carbothermic Reduction and Refining of V, Ta and B Oxides by Ar/Ar-H2 Plasma (Ar/Ar-H2 플라즈마에 의한 V, Ta, B 산화물의 탄소용융환원 및 정련)

  • Chung, Yong-Sug;Park, Byung-Sam;Hong, Jin-Seok;Bae, Jung-Chan;Kim, Moon-Chul;Baik, Hong-Koo
    • Transactions of the Korean hydrogen and new energy society
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    • v.7 no.1
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    • pp.81-92
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    • 1996
  • The Ar/Ar-$H_2$ plasma method was applied to reduce oxides and refine metals of V, Ta and B. In addition, the high temperature chemical reaction in Ar plasma and of the refining reaction in the Ar-(20%)$H_2$ plasma were analyzed. The crude V of 96wt% purity was obtained at the ratio of $C/V_{2}O_{5}=4.50$ by the Ar plasma reduction grade and the maximum reduction was obtained at $C/V_{2}O_{5}=4.50$ due to the $O_{2}$ loss from the thermal decomposition of vanadium oxide. In the Ar-(20%)$H_2$ plasma refining, the metallic V of 99.2wt% was produced at the ratio of $C/V_{2}O_{5}=4.40$. It was considered that a main refining reaction resulted from the chemical reaction between the residual carbon and residual oxygen. The metallic Ta of 99.8wt% was obtained at the ratio of $C/Ta_{2}O_{5}=5.10$ in a Ar plasma reduction and the Oz loss from the thermal decomposition of tantalum pentoxide did not take place. The deoxidation reaction was more significant than the decarburization reaction in the Ar-(20%)$H_2$ plasma refining and the metallic Ta of 99.9wt% was produced within the range of $C/Ta_{2}O_{5}$ ratio of 4.50 to 5.10. The Vickers hardness of Ta in the above mentioned range was about 220Hv due to the decrease in a residual oxygen by the deoxidation reaction. On the other hand, C is no suitable agent for the reduction of $B_{2}O_{3}$ by the Ar and Ar-$H_2$ plasma. But Fe-B-Si alloy was produced with the reduction of $B_{2}O_{3}$ in the melt when Fe, C, $B_{2}O_{3}$, and ferroboron mixtures were melted by the high frequency induction melting.

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Breakdown Characteristics of Ar/N2 and Kr/N2Gas Mixtures with Pressure Variation (압력변화에 따른 Ar/N2및 Kr/N2혼합가스의 절연파괴 특성)

  • 이상우;이동인;이광식;김인식;김이국;배영호
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.16 no.1
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    • pp.106-113
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    • 2002
  • In this paper, breakdown characteristics of pure Kr, Ar and $N_2$gas with gas pressure range were investigated, and the measured values were compared with those in Ar/$N_2$and Kr/$N_2$gas mixtures with pressure varying. Also, various characteristics with gas mixtures in practical incandescent lamps were investigated. Summarizing the experimental results, the breakdown voltages of $N_2$gas were increased than those of Kr and Ar gas with large molecular weight, and the breakdown voltage increased with gas pressure increasing. The breakdown voltages of Ar/$N_2$and Ar/$N_2$gas mixtures were decreased with decreasing the mixtures ratio of $N_2$gas, and corona inception voltage of Kr/$N_2$gas mixtures under non-uniform fields were increased than those of Ar/$N_2$gas mixtures. In case of tactical incandescent lamps, luminous and lifetime of Kr(70%)/$N_2$(30%) gas mixtures were increased about 94[lm] and 380[hr] than those of Ar(70%)/$N_2$(30%) gas mixtures. and injection pressure of gas mixtures with cooling temperature of 20[$^{\circ}C$] in incandescent lamps were increased about 13[%] than those with cooling temperature of 40[$^{\circ}C$].

The properties of Al-doped ZnO films deposited with RF magnetron sputtering system in various H2/(Ar + H2) gas ratios (RF 마그네트론 스퍼터링 방법을 사용해 증착된 Al이 도핑 된 ZnO 박막의 H2/(Ar + H2) 가스 비율에 따른 특성)

  • Kim, Jwa-Yeon;Han, Jung-Su
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.3
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    • pp.122-126
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    • 2012
  • The properties of Al-doped ZnO (AZO) films were investigated as a function of $H_2/(Ar+H_2)$ gas ratio using an AZO (2 wt% $Al_2O_3$) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at $200^{\circ}C$ and in $2{\times}10^{-2}$ Torr working pressure and with various ratios of $H_2/(Ar+H_2)$ gas. During the AZO film deposition process, partial $H_2$ gas affected the AZO film characteristics. The electron resistivity (${\sim}9.21{\times}10^{-4}\;{\Omega}cm$) was lowest and mobility (${\sim}17.8\;cm^2/Vs$) was highest in AZO films when the $H_2/(Ar+H_2)$ gas ratio was 2.5 %. When the $H_2/(Ar+H_2)$ gas ratio was increased above 2.5 %, the electron resistivity increased and mobility decreased with increasing $H_2/(Ar+H_2)$ gas ratio in AZO films. The carrier concentration increased with increasing $H_2/(Ar+H_2)$ gas ratio from 0 % to 7.5 %. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90 % and an orientation of the deposition was [002] orientation for AZO films grown with all $H_2/(Ar+H_2)$ gas ratios.

Single mode yield analysis of index-coupled DFB lasers above threshold for various facet reflectivity combinations (Index-coupled DFB 레이저의 여러 가지 양 단면 반사율 조합에 따른 문턱 전류 이상에서 단일 모드 수율 해석)

  • 김상택;전재두;김부균
    • Korean Journal of Optics and Photonics
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    • v.14 no.3
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    • pp.298-305
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    • 2003
  • We have calculated the single mode yield of index-coupled (IC) DFB lasers above threshold for several kL, and facet reflectivity combinations, and investigated the correlation between those results and the single mode yield as a function of f number at the threshold. As a result, there is little correlation between the single mode yield above threshold and the single mode yield as a function of f number at the threshold. The single mode yields above threshold for kL of 0.8 and 1.25 is larger than those for kL, of 2 and 3 due to the spatial hole burning effect. Also, we have investigated the effect of the reflectivity of the AR facet on the single mode yield for AR-HR and AR-CL combinations. For AR-HR combinations, the single mode yield increases as the reflectivity of the AR facet decreases. However, for AR-CL combinations, the reflectivity of the AR facet for the largest single mode yield exists. In the single mode yield calculations for IC DFB lasers in this paper, the single mode yield for kL of 0.8 with AR(1%)-HR combination is largest above threshold.

Classification and Characteristics of Augmented Reality Contents of Fashion Brands (패션 브랜드의 증강현실(AR) 콘텐츠 유형 및 특성)

  • Lee, Hyun-Jin;Ku, Yang-Suk
    • Fashion & Textile Research Journal
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    • v.22 no.3
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    • pp.310-322
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    • 2020
  • This study investigated the classification and characteristics of augmented reality (AR) content of fashion brands. The AR contents of fashion brands were classified according to user participation space and content delivery method. Based on these types, eight case studies were conducted, along with a discussion of AR characteristics in terms of presence, interactivity, and immersion. The results showed that AR content could be divided into four types: offline visit-external information type, offline visit-internal experience type, online utilization-external information type, and online utilization-internal experience type. It was also found that there were differences in characteristics for each type of AR content. First, the offline visit-external information type requires various new content that can provide entertainment immersion to users. Second, the offline visit-internal experience type requires a powerful inducement for users to visit a specific space providing AR content and to participate in augmented environments. Third, the online utilization-external information type needs a series of AR content that can consistently incite users' curiosity about brands and products. Fourth, the online utilization-internal experience type needs effective content to improve users' shopping experience with the virtual fitting of fashion accessories, such as eyewear, hats, jewelry, and watches. Accordingly, fashion companies should create contents that can provide appropriate presence, interactivity, and immersion by AR type.

Etching characteristics of gold thin films using inductively coupled $Cl_2/Ar$ plasma ($Cl_2/Ar$ 유도 결합 플라즈마에 의한 gold 박막의 식각특성)

  • Chang, Yun-Seong;Kim, Dong-Pyo;Kim, Chang-Il;Chang, Eui-Goo;Lee, Su-Jae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05b
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    • pp.7-11
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    • 2002
  • In this study, Au thin films were etched with a $Cl_2/Ar$ gas combination in an in an inductively coupled plasma. The etch properties were measured for different gas mixing ratios of $Cl_2/(Cl_2+Ar)$ while the other process conditions were fixed at rf power (700 W), dc bias voltage (150 V), and chamber pressure (15 mTorr). The highest etch rate of the Au thin film was 3500 $\AA/min$ and the selectivity of Au to $SiO_2$ was 4.38 at a $Cl_2/(Cl_2+Ar)$ gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is Au-Cl bonding by chemical reaction between Cl and Au. During the etching of Au thin films in $Cl_2/Ar$ plasma, Au-Cl bond is formed, and these products can be removed by the physical bombardment of Ar ions. In addition, Optical emission spectroscopy (OES) were investigated to analyze radical density of Cl and Ar in plasma. The profile of etched Au investigated with scanning electron microscopy (SEM).

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