• Title/Summary/Keyword: AR

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A Study on Etch Characteristics of CeO2 Thin Film in An Ar/CF4/Cl2 Plasma (Ar/CF4/Cl2 플라즈마에 의한 CeO2 박막의 식각 특성 연구)

  • 장윤성;김동표;김창일;장의구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.5
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    • pp.388-392
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    • 2002
  • In this work, the etching of $CeO_2$ thin films has been performed in an inductively coupled $Ar/CF_4/Cl_2$ plasma. The highest etch rate of the $CeO_2$ thin film ws 250 ${\AA}/min$ and the selectivity of CeO$_2$to SBT was 0.4 at a 10% additive $Cl_2$ into Ar/($Ar+CF_4$)gas mixing ratio of 0.8. From result of X-ray photoelectron spectroscopy (XPS) analysis, there are Ce-Cl and Ce-F bonding by chemical reaction between Cl, F and Ce. During the etching of $CeO_2$ thin films in $Ar/CF_4/Cl_2$ plama, Ce-Cl and Ce-F bond is formed, and these prodcuts can be removed by the physical bombardment of Ar ions. The 10% additive $Cl_2$ into the Ar/($Ar+CF_4$)gas mixing ratio of 0.8 could enhance the reaction between Cl, F and Ce.

K-Ar biotite ages of pelitic schists in the Jeungpyeong-Deokpyeong area, central Ogcheon metamorphic belt, Korea (증평-덕평 지역 중부 옥천변성대에 분포하는 이질 편암의 K-Ar 흑운모 연대)

  • 조문섭;김인준;김현철;민경원;안중호;장미경개
    • The Journal of the Petrological Society of Korea
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    • v.4 no.2
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    • pp.178-184
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    • 1995
  • The K-Ar ages of biotites, obtained from thirteen pelitic schists in the Jeungpyeong-Deokpyeong area, central Ogcheon metamorphic belt, range from 89 Ma to 213 Ma except for one specimen. These K-Ar ages systematically decrease as the distance between the analyzed specimen and the Jurassic or Creataceous granite decreases. The K-Ar ages of b~otites adjacent to the Jurassic and Cretaceous granites are 166 Ma and 89 Ma, respectively. Thus, the biotite ages are interpreted to result from the partial or complete resetting by thermal activities in association with the intrusion of Mesozoic granites, following the regional-thermal metamorphism at Late Triassic to Early Jurassic times.

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Preparation of the Anti-Reflective(AR) Coating Film by Sol-Gel Method to Improve the Efficiency of Solar Cell (태양전지 효율 향상용 졸-겔 법에 의한 반사방지 코팅막의 제조)

  • Kim, Hyosub;Kim, Youngho;Choi, Jaeyune
    • Transactions of the Korean hydrogen and new energy society
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    • v.25 no.2
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    • pp.145-150
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    • 2014
  • This study investigates the preparation of anti-reflective (AR) coating film to improve the efficiency of solar cell. The AR coating film was successfully obtained by dip-coating with AR coatings prepared by sol-gel method. Fluoroalkylsilane was additionally introduced into the coatings to give the self-cleaning effect of AR coating film. We performed the abrasion test, pencil scratch hardness test and cross-cut test to identify the mechanical strength of AR coating film. As the results, the transmittance of AR coating films with 9.07, 18.13 and 27.20 of IPA/MTMS molar ratios were 93.1, 93.6 and 95.3%, respectively. The water contact angle and transmittance of AR coating film increased by the introduction of hydrophobicity. The prepared AR coating film shows the high level of abrasion, hardness and adhesion. The IPA/MTMS molar ratio of 27.20 and the withdrawing speed range of 0.20 ~ 0.28cm/sec are the optimal coating condition in terms of the transmittance and mechanical strength of AR coating film.

The Luminous Efficiency Improvement of Color AC Plasma Display Panel by adding Ar Gas (Ar Gas 첨가에 따른 칼라 플라즈마 디스플레이 패널의 효율 향상)

  • Shin, Jae-Hwa;Choi, Hoon-Young;Lee, Seok-Hyun
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.51 no.3
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    • pp.132-136
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    • 2002
  • In this study, we analyzed the luminous efficiencies of Ne-Xe-Ar and He-Ne-Xe-Ar mixing gas in compared with those of Ne-Xe and He-Ne-Xe mixing gas to improve luminous efficiency by adding a small amount of Ar gas. At the Xe 4%, the brightness of Ne-Xe and He-Ne-Xe mixing gas is higher than others. As the Xe % increases, power consumption decreases. Thus, in the Ne-Xe and He-Ne-Xe mixing gas of Xe 4%, we obtained maxium luminous efficiency. The Ar concentration is varied from 0.1% to 0.7% in this study. The luminous efficiency of the Ne-Xe(4%) mixing gas is improved to 1.16 and 1.13 lm/W by adding an Ar concentration of 0.4% and 0.5%, respectively. The luminous efficiency of the He-Ne-Xe(4%) (He : Ne = 7 : 3) mixing gas is considerably improved by adding an Ar concentration of above 0.3%. The maximum luminous efficiency of this mixing gas is 1.38 lm/W at the condition of adding an Ar concentration of 0.5%.

Structure and Influence of $Sr_{0.7}Bi_{2.3}Nb_2O_9$ Thin Film with $Ar/O_2$ Ratio ($Ar/O_2$비에 따른 $Sr_{0.7}Bi_{2.3}Nb_2O_9$ 박막의 구조 및 영향)

  • Kim, Jin-Sa;Choi, Woon-Shik
    • Journal of the Semiconductor & Display Technology
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    • v.8 no.2
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    • pp.11-14
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    • 2009
  • The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various $Ar/O_2$ ratio. We investigated the effect of deposition condition(specially $Ar/O_2$ ratio) on the structural properties of SBN thin film. As $Ar/O_2$ ratio was increased, the peaks in the XRD pattern became more sharp. Also, the peaks(008)(115)(220) in 80/20 of $Ar/O_2$ ratio were suddenly appeared. The optimum of the rougness showed about 4.33 nm in 70/30 of $Ar/O_2$ ratio. The crystallinity of SBN thin films were increased with the increase of $Ar/O_2$ ratio. Also, Deposition rate of SBN thin films was about 4.17 nm/min in 70/30 of $Ar/O_2$ ratio. The capacitance of SBN thin films were increased with the increase of $Ar/O_2$ ratio.

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Effects of Sputtering Ar Gas Pressure on Magnetic and Magneto-Optical Properties in Compositonally Modulated Co/Pt Superlattice Thin Films (조성변조 Co/Pt 초격자 박막의 Ar 가스 압력변화에 따른 자기 및 자기광학적 특성)

  • 유천열;김진홍;신성철
    • Journal of the Korean Magnetics Society
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    • v.4 no.1
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    • pp.32-38
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    • 1994
  • We have investigated the effects of sputtering Ar gas pressure on magnetic and magneto-optical properties in compositionally modulated Co/Pt superlattice thin films. The samples were prepared by dc magnetron sputtering. Sputtrering Ar gas pressure was varied from 2 to 30 mTorr. The microstructure of the samples was examined by scanning electron microscope and the x-ray diffractometry. The magnetization, the Kerr rotation angle, and the reflectivity of the samples were measured. The columnar structure was developed, and the coercivity was drasti- cally increased, when the sputtering Ar gas pressure was higher than 20 mTorr. We explained that the variation of the magnetization, the Kerr rotation angle, and the reflectivity was related with the microstructure influenced by the variation of the Ar gas pressure.

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Clinical Application of AR System in Early Rehabilitation Program After Stroke: 2 Case Study

  • An, Chang Man;Kim, Dae Hyun
    • The Journal of Korean Physical Therapy
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    • v.31 no.3
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    • pp.141-146
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    • 2019
  • Purpose: To investigate the effect of an augmented reality (AR) system on muscle strength and function level of the paretic lower limb and the balance ability in the early rehabilitation program of acute stroke patients. Methods: The participants (30 or fewer days after stroke) were randomly assigned to receive intervention with an early rehabilitation program using an AR system (n=1) or an early rehabilitation program consisting of functional electrical stimulation and tilt table use (n=1). Patients in both subjects received interventions 4-5 times a week for 3 weeks. Results: In the paretic limb muscle strength, AR subject was increased from 15 to 39.6 Nm and Control subject was increased from 5 to 30.2 Nm. The paretic limb function of AR subject motor function was increased from 8 to 28 score and Control subject motor function was increased from 6 to 14 score. But sensory function was very little difference between the two subjects (AR subject: from 4 to 10 score, Control subject: from 3 to 10 score). In the balance ability, AR subject had more difference after intervention than control subject (AR subject: 33 score, Control subject: 22 score). Conclusion: The early rehabilitation program using the AR system showed a slightly higher improvement in the motor function of the paretic lower limb and balance ability measurement than the general early rehabilitation program. The AR system, which can provide more active, task-oriented, and motivational environment, may provide a meaningful environment for the initial rehabilitation process after stroke.

E-textbook contents planning study applying Augmented Reality design technology (증강현실(AR) 디자인 기술을 적용한 E-교과서 콘텐츠 기획 연구)

  • Yoo, young-mi;Jo, seong-hwan
    • Proceedings of the Korea Contents Association Conference
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    • 2017.05a
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    • pp.7-8
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    • 2017
  • 증강현실(AR)의 기술력은 우리들의 생활속에 깊숙이 침투하여 혁신적인 변화를 가져오고 있다. 증강현실(AR)의 기술동향을 살펴보고, E-교과서 분야에 증강현실(AR)이 적용됐을 때 교육적 효과가 극대화 될 것으로 기대를 모으게 된다. 이에 증강현실(AR) 기술동향과 E-교과서 사례를 분석하여 증강현실(AR) 디자인 기술을 적용한 E-교과서 콘텐츠 기획에 관해 연구하고자 한다.

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Study on the Surface Reaction of Pt thin Film with $SF_6/Ar and Cl_2/Ar$ plasma gases (Pt 박막의 $SF_6/Ar과 Cl_2/Ar4$ 플라즈마 가스와의 표면반응에 관한 연구)

  • 김상훈;주섭열;안진호
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2001.07a
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    • pp.110-113
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    • 2001
  • ECR(electron cyclotron resonance) 플라즈마 식각 장비를 이용하여 SF$_{6}$/Ar과 Cl$_2$/Ar 플라즈마 가스에 대한 Platinum (이하 Pt) 박막의 식각 특성을 연구하였다. Pt 박막의 경우 Cl$_2$ 가스 혼합물에 대한 식각 특성은 많이 보고가 되어 왔으나 상대적으로 Fluorine 계열의 가스 혼합물에 의한 시각 연구는 미비하였다. 본 연구에서는 SF$_{6}$/Ar과 Cl$_2$/Ar 플라즈마 가스를 이용한 Pt 박막의 식각 특성을 비교 분석하고 각각의 가스와 Pt 박막과의 반응을 분석, 식각 특성을 개선하고자 하였다.

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Study on the Etching Profile and Etch Rate of $SiO_2/Si_3N_4$ by Ar Gas Addition to $CF_4/O_2$ Plasma ($CF_4/O_2$ Plasma에 Ar첨가에 따른 $SiO_2/Si_3N_4$ 에칭 특성 변화)

  • Kim, Boom-Soo;Kang, Tae-Yoon;Hong, Sang-Jeen
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.127-128
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    • 2009
  • CCP방식의 식각에 있어서 CF4/O2 Plasma Etch에 Ar을 첨가함으로써 Etch특성이 어떻게 변화하는지를 조사하였다. FE-SEM를 이용하여 Etch Profile를 측정하였다. 또한 Elipsometer와 Nanospec을 이용하여 Etch rate를 측정하였다. Ar의 비율이 전체의 47%정도를 차지하였을 때까지 Etch Profile이 향상되었다가 그이후로는 다시 감소하는 것을 볼 수 있었다. Ar을 첨가할수록 etch rate은 계속 향상되었다. Ar을 첨가하는 것은 물리적인 식각으로 반응하여 Etch rate의 향상과 적정량의 Ar을 첨가했을 때 Etch profile이 향상되는 결과를 얻었다.

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