• 한국진공학회지
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• 제4권S1호
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• pp.13-20
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• 1995

As으로 in-situ 도핑된 폴리실리콘 막을 원하는 부위에만 선택적으로 증착시킬 수 있는 RTP-CVD 증착기술이 성공적으로 수행되었다. 막의 증착속도는 도핑량이 증차함에 따라 점차 감소하였으나 As의 양이 5ppm보다 커지자 급격히 감소하였다. 또한 증착속도는 As의 유량이 일정할 때, SiH2CI2 유량에 따라 직선적으로 변화하였다. As 도펀트의 농도는 막내부에 비해 폴리실리콘/실리콘기판의 계면과 표면에서 상대적으로 높게 나타났으며, 특히 증착온도가 낮을 때 As 도펀트의 농도는 더 높아짐을 알 수 있었다. 실리콘 표면에서 약 40-50nm 위치에서 도펀트의 농도천이가 급격히 일어났으며, 그 결과 RTP-CVD공정을 이용할 때 극히 얕고 일정한 깊이분포를 갖는 n+-p junctions were achieved and laterally uniform delineated junctions were also observed using RTP-CVD.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 정기총회 및 추계학술대회 논문집 학회본부
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• pp.231-233
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• 1993

This paper proposes a new $SiO_2$ film condenser fabrication technique by photo-chemically deposited $SiO_2$ films by Laser CVD. Laser CVD is noticeable that film deposition can be done at low temperature below $300^{\circ}C$ with less damage. After film deposition, the characteristics of Laser CVD $SiO_2$ films and $SiO_2$ film condenser is evaluated.

• 진공이야기
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• 제2권4호
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• pp.16-26
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• 2015

Carbon nanomaterials including nanocrystalline diamond and graphene films are expected to play a core role in $21^{st}$ century industries due to their amazing physicochemical properties. To achieve their practical utilization and industrialization, the development of their mass production technologies is strongly required. Recently, a surface wave excited plasma (SWP) which is produced using microwaves has been attracting special attentions as a candidate for the mass production technology of carbon nanomaterials. SWP can allow a low-temperature large-area plasma chemical vapor deposition (CVD) system. Here, this article introduces the promising SWP-CVD technology. Plasma characteristics in a SWP will be introduced in detail to help understanding how to use and control a SWP as a plasma source for CVD applications.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1270-1273
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• 1997

We have investigated the latchup characteristics of BL/BILLI retrograde twin well CMOS that has the high energy ion implanted buried layer to intend for more improvement of latchup compare to conventional retrograde well and BILLI structures. We explored the dependence of various latchup characteristics such as n+ trigger latchup and p+ trigger latchup on the buried layer implant doses. We show various DC latchup characteristics that allow us to evaluate each technology and suggest guidelines for the reduction of latchup susceptibility.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1292-1297
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• 1997

본 연구에서는 latch-up 개선책의 일환으로 개발중인 매립층을 갖는 retrograde well의 형성기술과 더불어 공정 단순화를 목적으로 개발된 BILLI (Buried Implanted Layer for Lateral Isolation) well 구조[1]에 대한 공정 유기 결함을 분석하고 그에 의한 소자 열화 특성을 분석 하였으며 그 개선책을 제시 하고자 하였다. 매립층 형성에 의한 유기결함은 접합 누설전류와 Gate oxide 신뢰성을 열화 시켰으나 이온주입 후 $1000^{\circ}C$ 이상의 온도에서 10sec 정도의 RTP anneal에 의해 그 소자 특성이 개선되며 표면 결함이 감소함을 알 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1301-1303
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• 1997

This study was performed to investigate the deposition mechanism of $SiO_2$ by ArF excimer Laser(193nm) CVD with $Si_2H_6$ and $N_2O$ gas mixture and evaluate Laser CVD quantitatively by modeling. In this study, new model of $SiO_2$ deposition process by Laser CVD is introduced and deposition rates are simulated by computer with the basis on this modeling. And simulation results are compared with experimental results measured at various conditions such as reaction gas ratio, chamber pressure, substrate temperature and laser beam intensity.

• 한국세라믹학회지
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• 제32권9호
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• pp.1003-1008
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• 1995

CVD-Si3N4/CVD-SiC/pack-SiC/pyro-carbon/(3-D C/C composite) multilayer coating was performed to improve the oxdiation resistance and erosion resistance properteis of the 3-D carbon/carbon composite, and the plasma test was performed to measure the oxidation resistance and erosion resistance properties. The thicknesses of each film layer were about 10${\mu}{\textrm}{m}$ for pack-SiC, 5${\mu}{\textrm}{m}$ for CVD-SiC and 40${\mu}{\textrm}{m}$ for CVD-Si3N4. When the multilayer coated specimen was exposed to the plasma flame with temperature of 500$0^{\circ}C$ for 20 seconds, it showed the weight loss five times less than that of the only pyro-carbon coated specimen.

• 한국결정학회:학술대회논문집
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• 한국결정학회 2002년도 정기총회 및 추계학술연구발표회
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• pp.20-20
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• 2002

Based on experimental and theoretical analyses, we suggested a new possibility that the CVD diamond films grow not by the atomic unit but by the charged clusters containing a few hundreds of carbon atoms, which form spontaneously in the gas phase [J. Crysta] Growth 62 (1996) 55]. These hypothetical negatively-charged clusters were experimentally confirmed under a typical hot-filament diamond CVD process. Thin film growth by charged clusters or gas phase colloids of a few nanometers was also confirmed in Si and ZrO₂ CVD and appears to be general in many other CVD processes. Many puzzling phenomena in the CVD process such as selective deposition and nanowire growth could be explained by the deposition behavior of charged clusters. Charged clusters were shown to generate and contribute at least partially to the film deposition by thermal evaporation. Origin of charging at the relatively low temperature was explained by the surface ionization described by Saha-Langmuir equation. The hot surface with a high work function favors positive charging of clusters while that of a low work function favors negative charging.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1439-1441
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• 1994

This paper propose a new $Ta_2O_5$ film fabrication technique by Laser CVD. Laser CVD is noticable that film formation can be done at low temperature with less damage. After film deposition, the characteristics of Laser CVD $Ta_2O_5$ film is evaluated.

• 한국표면공학회지
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• 제37권3호
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• pp.137-145
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• 2004

This study surveys the microscopic wear of CVD TiN coatings in repeated sliding, using the SEM Tribosystem as in-situ system. According to the research, the depth of wear groove and the specific wear amount are changed by the transition of the microscopic wear mode. This investigation leads to the fact that the change of wear characteristics produces the transition of the wear mode. In this survey, four modes are observed for CVD TiN coatings with the thickness of 1.6$\mu\textrm{m}$: ploughing, powder formation, flake formation and coating delimitation. The microscopic wear properties is quantitatively evaluated in terms with the microscopic wear mode and the specific wear amount. These relationships prove that the observation of wear modes with a SEM Tribosystem is useful to evaluate wear properties.