• Title/Summary/Keyword: CVD

Search Result 1,811, Processing Time 0.576 seconds

Formation and Characteristics of the Fluorocarbonated SiOF Film by $O_2$/FTES-Helicon Plasma CVD Method

  • Kyoung-Suk Oh;Min-Sung Kang;Chi-Kyu Choi;Seok-Min Yun
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 1998.02a
    • /
    • pp.77-77
    • /
    • 1998
  • Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

  • PDF

InGaN/GaN Blue LED device 제조시 ALD (Atomic Layer Deposition) 방법으로 증착된 Al2O3 Film의 Passivation 효과

  • Lee, Seong-Gil;Bang, Jin-Bae;Yang, Chung-Mo;Kim, Dong-Seok;Lee, Jeong-Hui
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2010.08a
    • /
    • pp.211-212
    • /
    • 2010
  • GaN 기반의 상부발광형 LED는 동작되는 동안 생기는 전기적 단락, 그리고 칩 위의 p-형 전극과 n-형 전극 사이에 생기는 누설전류 및 신뢰성 확보를 위하여 칩 표면에 passivation 층을 형성하게 된다. SiO2, Si3N4와 같은 passivation layers는 일반적으로 PECVD (Plasma Enhanced Chemical Vapor Deposition)공정을 이용한다, 하지만 이는 공정 특성상 plasma로 인한 damage가 유발되기 때문에 표면 누설 전류가 증가 한다. 이로 인해 forward voltage와 reverse leakage current의 특성이 저하된다. 본 실험에서는 원자층 단위의 박막 증착으로 인해 PECVD보다 단차 피복성이 매우 우수한 PEALD(Plasma Enhanced Atomic Layer Deposition)공정을 이용하여 Al2O3 passivation layer를 증착한 후, 표면 누설전류와 빛의 출력 특성에 대해서 조사해 보았다. PSS (patterned sapphire substrate) 위에 성장된 LED 에피구조를 사용하였고, TCP(Trancformer Copled Plasma)장비를 사용하여 에칭 공정을 진행하였다. 이때 투명전극을 증착하기 위해 e-beam evaporator를 사용하여 Ni/Au를 각각 $50\;{\AA}$씩 증착한 후 오믹 특성을 향상시키기 위하여 $500^{\circ}C$에서 열처리를 해주었다. 그리고 Ti/Au($300/4000{\AA}$) 메탈을 사용하여 p-전극과 n-전극을 형성하였다. Passivation을 하지 않은 경우에는 reverse leakage current가 -5V 에서 $-1.9{\times}10-8$ A 로 측정되었고, SiO2와 Si3N4을 passivation으로 이용한 경우에는 각각 $8.7{\times}10-9$$-2.2{\times}10-9$로 측정되었다. Fig. 1 에서 보면 알 수 있듯이 5 nm의 Al2O3 film을 passivation layer로 이용할 경우 passivation을 하지 않은 경우를 제외한 다른 passivation 경우보다 reverse leakage current가 약 2 order ($-3.46{\times}10-11$ A) 정도 낮게 측정되었다. 그 이유는 CVD 공정보다 짧은 ALD의 공정시간과 더 낮은 RF Power로 인해 plasma damage를 덜 입게 되어 나타난 것으로 생각된다. Fig. 2 에서는 Al2O3로 passivation을 한 소자의 forward voltage가 SiO2와 Si3N4로 passivation을 한 소자보다 각각 0.07 V와 0.25 V씩 낮아지는 것을 확인할 수 있었다. 또한 Fig. 3 에서는 Al2O3로 passivation을 한 소자의 output power가 SiO2와 Si3N4로 passivation을 한 소자보다 각각 2.7%와 24.6%씩 증가한 것을 볼 수 있다. Output power가 증가된 원인으로는 향상된 forward voltage 및 reverse에서의 leakage 특성과 공기보다 높은 Al2O3의 굴절률이 광출력 효율을 증가시켰기 때문인 것으로 판단된다.

  • PDF

Characteristics of Low Dielectric Constant SiOF Thin Films with Post Plasma Treatment Time (플라즈마 후처리 시간에 따른 저유전율 SiOF 박막의 특성)

  • Lee, Seok Hyeong;Park, Jong Wan
    • Journal of the Korean Vacuum Society
    • /
    • v.7 no.3
    • /
    • pp.267-267
    • /
    • 1998
  • The fluorine doped silicon oxide (SiOF) intermetal dielectric (IMD) films have been of interest due to their lower dielectric constant and compatibility with existing process tools. However instability issues related to bond and increasing dielectric constant to water absorption when the SiOF films was exposured to atmospheric ambient. Therefore, the purpose of this research is to study the effect of post oxygen plasma treatment on the resistance of moisture absorption and reliability of SiOF film. Improvement of moisture absorption resistance of SiOF film is due to the forming of thin SiO₂layer at the SiOF film surface. It is thought that the main effect of the improvement of moisture absorption resistance was densification of the top layer and reduction in the number of Si-F bonds that tend to associate with OH bonds. However, the dielectric constant was increased when plasma treatment time is above 5 min. In this study, therefore, it is thought that the proper plasma treatment time is 3 min when plasma treatment condition is 700 W of microwave power, 3 mTorr of process pressure and 300℃ of substrate temperature.

CVD를 이용한 수직으로 정렬된 탄소나노튜브의 합성과 성장한계에 관한 메커니즘

  • Park, Sang-Eun;Song, U-Seok;Kim, Yu-Seok;Song, In-Gyeong;Lee, Su-Il;Park, Jong-Yun
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.02a
    • /
    • pp.615-615
    • /
    • 2013
  • 탄소나노튜브(carbon nanotubes; CNT)는 강철보다 10~100배 견고할 뿐만 아니라 영률과 탄성률 은 각각 1.8 TPa, 1.3 TPa에 달하는 매우 우수한 기계적 강도를 지니고 있으며, 구리보다 좋은 전기 전도도와 다이아몬드의 2배에 이르는 열전도도를 지닌 물질이다. 이러한 탄소나노튜브의 우수한 특성을 이용하여 나노섬유, 고분자-탄소나노튜브의 고기능 복합체, 나노소자, 전계방출원(field emitter), 가스센서 등 다양한 분야로의 활용을 위한 연구가 진행되고 있다. 특히, 수백 ${\mu}m$ 이상의 길이로 수직 성장된 탄소나노튜브(VA-CNTs)의 합성은 길이 대 직경의 비(aspect ratio)가 비약적으로 증가하여 앞서 언급한 분야로의 활용이 더욱 유리하며, 그 중에서도 대량 생산, 나노섬유 및 나노복합체로서의 활용에 극히 유용하다. 최근에는 열 화학기상증착(thermal chemical vapor deposition; TCVD)법을 이용하여 탄소나노튜브의 구조를 제어하는 연구들이 많이 보고되고 있다. 열 화학기상증착을 이용한 수직 정렬된 탄소나노튜브의 합성에서 합성조건의 변화는 탄소나노튜브의 길이, 벽의 수, 직경, 결정성 등 구조에 큰 영향을 미친다. 탄소나노튜브는 이러한 구조에 따 라 물리적 특성이 달라지기 때문에 다양한 분야로의 응용을 위해서는 합성에 대한 근본적인 이해 가 절실히 요구된다. 본 연구에서는 열 화학기상증착법을 이용한 합성에서 성장압력의 변화에 따른 탄소나노튜브의 구조적 특성을 조사하였다. 성장압력의 변화는 탄소나노튜브의 밀도, 길이, 결정성에 큰 영향을 미치는 것을 주사전자현미경과 라만분광법을 이용하여 확인하였다. 이러한 결과 는 탄소나노튜브 박막(CNT forest)의 가장자리(edge)에 비정질 탄소(amorphous carbon)의 흡착으로 인한 나노튜브사이의 간격(intertube distance)이 좁아짐에 따른 가스공급 차단 효과로 설명이 가능 하다. 또한, 마이크로웨이브 플라즈마 화학기상증착법을 이용하여 탄소나노튜브를 합성하였다. 합성과정 중 산소(O2)를 주입 하였을 경우, 그렇지 않은 경우에 비하여 성장 속도가 증가하여 3시간 합성 시 2 mm가 넘는 수직 정렬된 탄소나노튜브를 합성 할 수 있었다. 이러한 결과는 과잉 공급 되어 탄소나노튜브로 합성되지 못하고 촉매금속의 표면과 탄소나노튜브의 벽에 비정질의 형태로 붙어있는 탄소 원자들을 추가 주입해 준 산소에 의하여 CO 또는 CO2 형태로 제거해 줌으로써 활성화된 촉매금속의 반응 시간을 향상 시켜주어 탄소공급이 원활하게 이루어졌기 때문이라 생각된다.

  • PDF

The Influence of Oxygen Gas Flow Rate on Growth of Tin Dioxide Nanostructures (이산화주석 나노구조물의 성장에서 산소가스 유량이 미치는 영향)

  • Kim, Jong-Il;Kim, Ki-Chul
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.19 no.10
    • /
    • pp.1-7
    • /
    • 2018
  • Tin dioxide, $SnO_2$, is applied as an anode material in Li-ion batteries and a gas sensing materials, which shows changes in resistance in the presence of gas molecules, such as $H_2$, NO, $NO_2$ etc. Considerable research has been done on the synthesis of $SnO_2$ nanostructures. Nanomaterials exhibit a high surface to volume ratio, which means it has an advantage in sensing gas molecules and improving the specific capacity of Li-ion batteries. In this study, $SnO_2$ nanostructures were grown on a Si substrate using a thermal CVD process with the vapor transport method. The carrier gas was mixed with high purity Ar gas and oxygen gas. The crystalline phase of the as-grown tin oxide nanostructures was affected by the oxygen gas flow rate. The crystallographic property of the as-grown tin oxide nanostructures were investigated by Raman spectroscopy and XRD. The morphology of the as-grown tin oxide nanostructures was confirmed by scanning electron microscopy. As a result, the $SnO_2$ nanostructures were grown directly on Si wafers with moderate thickness and a nanodot surface morphology for a carrier gas mixture ratio of Ar gas 1000 SCCM : $O_2$ gas 10 SCCM.

Associations between pulmonary function disorders & Metabolic Syndrome: A Cross-Sectional Study Using Data from KNHANES 2008-2013 (폐기능 장애와 대사 증후군 관련성: 2008-2013 국민건강 영양조사 자료 사용 단면연구)

  • Kang, Sun-Hee;Boo, Yoo-Kyung;Ahn, Byung-Ki
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.18 no.11
    • /
    • pp.433-444
    • /
    • 2017
  • This study was conducted to identify relationships between lung function disorders and Metabolic Syndrome(MetS) that have common comorbidities such as Cardio Vascular Diseases(CVD). According to the hypothesis that there may be a significant relationship between them, analyses were conducted to identify the proper management point for those diseases. Overall, 53,829 data were taken from KNHANES 2008-2013. Included data were PFT(Pulmonary Function Test) done and age over 40. All the 14 confounders applied, only 8,137 cases (M:3,951, F:4,186) were left. Low pulmonary function was divided into two categories, obstructive and restrictive patterns, based on the Global Initiative for Chronic Obstructive Lung Disease(GOLD) criteria, while MetS was defined based on the revised NCEP-ATPIII criteria. The relationships between those diseases were analyzed using logistic regression analysis. In addition, for the prevalence rate, cross-tab analysis were conducted. There were no significant relationships observed between obstructive lung disease and MetS, but a restrictive pattern had a meaningful relationship with MetS. Specifically, MetS showed a higher prevalence rate for both obstructive and restrictive pattern patients than the control group. Restrictive pattern patients showed a higher prevalence rate to MetS than obstructive patients. Overall, restrictive lung patterns showed a meaningful association with MetS, but not with obstructive patterns. Additionally, the prevalence rate of MetS among restrictive patients was higher than among obstructive patients.

An Analysis of the Quality Attributes of Semiconductor Deposition Equipment Using Kano Model: Implications from the Perspective of Complex Products and Systems (CoPS) (카노(Kano) 모델을 활용한 반도체 증착장비 분야 품질 만족 특성 분석: 복합제품시스템(CoPS) 관점에서의 시사점)

  • Lee, Seung Hwan;Kim, Byung-Keun;Ji, Ilyong
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.21 no.5
    • /
    • pp.28-38
    • /
    • 2020
  • Semiconductor deposition equipment is an important example of Complex Products and Systems (CoPS) and requires in-depth understanding of user requirements. For this reason, we analyzed and compared users' and producers' perspectives on the quality attributes of semiconductor deposition equipment using the Kano model. The results show that the patterns of users' perspectives were different from those of producers. Out of 22 level-2 quality attributes, producers evaluated all 22 attributes as attractive qualities, but users evaluated only 6 as "attractive," 10 as "indifferent," 2 as "must have," and 4 as "other." Although all quality attributes were attractive for producers, only those related to reliability were attractive or must-have qualities, and all others were "indifferent." This result implies that the perspectives on quality attributes may be different between users and producers, and producers should revise their perspectives and strategies. In addition, the results support the characteristics of CoPS suggested by literature implying that performance is more important than economies of scale and cost reduction. It is suggested that producers of semiconductor deposition equipment strategize their approaches to users by considering the characteristics of CoPS.

The Effect of Diluent Gases on the Growth Behavior of CVD SiC (희석기체가 화학증착 탄화규소의 성장거동에 미치는 영향)

  • 최두진;김한수
    • Journal of the Korean Ceramic Society
    • /
    • v.34 no.2
    • /
    • pp.131-138
    • /
    • 1997
  • Silicon carbide films were chemically vapor deposited onto graphite substrates using MTS(Ch3SiCl3) as a source and Ar or H2 as a diluent gas. The experiments were performed at a fixed condition such as a de-position temperature of 130$0^{\circ}C$, a total pressure of 10 torr, and a flow rate of 100 sccm for each MTS and carrier gas. The purpose of this study is to consider the variation of the growth behavior with the addition of each diluent gas. It is shown that the deposition rate leads to maximum value at 200 sccm addition ir-respective of diluent gases and the deposition rate of Ar addition is faster than that of H2 one. It seems that these characteristics of deposition rate are due to varying interrelationship between boundary layer thick-ness and the concentration of a source with each diluent gas addition, when overall deposition rate is con-trolled by mass transport kinetics. The preferred orientation of (220) plane was maintained for the whole range of Ar addition. However, above 200 sccm addition, especially that of (111) plane was more increased in proportion to H2 addition. Surface morphologies of SiC films were the facet structures under Ar addition, but those were gradually changed from facet to smooth structures with H2 addition. Surface roughness be-came higher in Ar, but it became lower in H2 with increasing the amount of diluent gas.

  • PDF

Artificial Control of ZnO Nanorods via Manipulation of ZnO Nanoparticle Seeds (산화아연 나노핵의 조작을 통한 산화아연 나노로드의 제어)

  • Shin, Kyung-Sik;Lee, Sam-Dong;Kim, Sang-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2008.11a
    • /
    • pp.399-399
    • /
    • 2008
  • Synthesis and characterization of ZnO structure such as nanowires, nanorods, nanotube, nanowall, etc. have been studied to multifunctional application such as optical, nanoscale electronic and chemical devices because it has a room-temperature wide band gap of 3.37eV, large exiton binding energy(60meV) and various properties. Various synthesis methods including chemical vapor deposition (CVD), physical vapor deposition, electrochemical deposition, micro-emulsion, and hydrothermal approach have been reported to fabricate various kinds of ZnO nanostructures. But some of these synthesis methods are expensive and difficult of mass production. Wet chemical method has several advantage such as simple process, mass production, low temperature process, and low cost. In the present work, ZnO nanorods are deposited on ITO/glass substrate by simple wet chemical method. The process is perfomed by two steps. One-step is deposition of ZnO seeds and two-step is growth of ZnO nanorods on substrates. In order to form ZnO seeds on substrates, mixture solution of Zn acetate and Methanol was prepared.(one-step) Seed layers were deposited for control of morpholgy of ZnO seed layers by spin coating process because ZnO seeds is deposited uniformly by centrifugal force of spin coating. The seed-deposited samples were pre-annealed for 30min at $180^{\circ}C$ to enhance adhesion and crystallinnity of ZnO seed layer on substrate. Vertically well-aligned ZnO nanorods were grown by the "dipping-and-holding" process of the substrates into the mixture solution consisting of the mixture solution of DI water, Zinc nitrate and hexamethylenetetramine for 4 hours at $90^{\circ}C$.(two-step) It was found that density and morphology of ZnO nanorods were controlled by manipulation of ZnO seeds through rpm of spin coating. The morphology, crystallinity, optical properties of the grown ZnO nanostructures were carried out by field-emission scanning electron microscopy, high-resolution electron microscopy, photoluminescence, respectively. We are convinced that this method is complementing problems of main techniques of existing reports.

  • PDF

Fabrication of Nanopatterned Oxide Layer on GaAs Substrate by using Block Copolymer and Reactive Ion Etching (블록 공중합체와 반응성 이온식각을 이용한 GaAs 기판상의 나노패터닝된 산화막 형성)

  • Kang, Gil-Bum;Kwon, Soon-Mook;Kim, Seoung-Il;Kim, Yong-Tae;Park, Jung-Ho
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.16 no.4
    • /
    • pp.29-32
    • /
    • 2009
  • Dense and periodic arrays of nano-sized holes were patterned in oxide thin film on GaAs substrate. To obtain the nano-size patterns, self-assembling diblock copolymer was used to produce thin film of uniformly distributed parallel cylinders of polymethylmethacrylate (PMMA) in polystyrene (PS) matrix. The PMMA cylinders were removed with UV expose and acetic acid rinse to produce PS nanotemplate. By reactive ion etching, pattern of the PS template was transferred to under laid silicon oxide layer. Transferred patterns were reached to the GaAs substrate by controlling the dry etching time. We confirmed the achievement of etching through the removing oxide layer and observation of GaAs substrate surface. Optimized etching time was 90 to 100 sec. Pore sizes of the nanopattern in the silicon oxide layer were 20~22 nm.

  • PDF