• Title/Summary/Keyword: CVD

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A Study on Reducing High Energy Ion Implant Induced Defect (고에너지 이온주입 공정에 의한 유기 결함과 그 감소 대책)

  • Kim, Young-Ho;Kim, In-Soo;Kim, Chang-Duk;Kim, Jong-Kwan;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
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    • pp.1292-1297
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    • 1997
  • 본 연구에서는 latch-up 개선책의 일환으로 개발중인 매립층을 갖는 retrograde well의 형성기술과 더불어 공정 단순화를 목적으로 개발된 BILLI (Buried Implanted Layer for Lateral Isolation) well 구조[1]에 대한 공정 유기 결함을 분석하고 그에 의한 소자 열화 특성을 분석 하였으며 그 개선책을 제시 하고자 하였다. 매립층 형성에 의한 유기결함은 접합 누설전류와 Gate oxide 신뢰성을 열화 시켰으나 이온주입 후 $1000^{\circ}C$ 이상의 온도에서 10sec 정도의 RTP anneal에 의해 그 소자 특성이 개선되며 표면 결함이 감소함을 알 수 있었다.

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A Study on Deposition Mechanism of Laser CVD $SiO_2$ by Process Simulation (공정 Simulation에 의한 Laser CVD $SiO_2$막 형성 기구 규명에 관한 연구)

  • Shin, Sang-Woo;Lee, Sang-Kwon;Kim, Tae-Hun;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
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    • pp.1301-1303
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    • 1997
  • This study was performed to investigate the deposition mechanism of $SiO_2$ by ArF excimer Laser(193nm) CVD with $Si_2H_6$ and $N_2O$ gas mixture and evaluate Laser CVD quantitatively by modeling. In this study, new model of $SiO_2$ deposition process by Laser CVD is introduced and deposition rates are simulated by computer with the basis on this modeling. And simulation results are compared with experimental results measured at various conditions such as reaction gas ratio, chamber pressure, substrate temperature and laser beam intensity.

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Improvement of Oxidation Resistance and Erosion Resistance Properties of the C/C Composite with the Multilayer Coating (다층코팅을 이용한 C/C 복합재료의 내산화성 및 내마모성 증진)

  • 김옥희;이승윤;윤병일;박종욱
    • Journal of the Korean Ceramic Society
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    • v.32 no.9
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    • pp.1003-1008
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    • 1995
  • CVD-Si3N4/CVD-SiC/pack-SiC/pyro-carbon/(3-D C/C composite) multilayer coating was performed to improve the oxdiation resistance and erosion resistance properteis of the 3-D carbon/carbon composite, and the plasma test was performed to measure the oxidation resistance and erosion resistance properties. The thicknesses of each film layer were about 10${\mu}{\textrm}{m}$ for pack-SiC, 5${\mu}{\textrm}{m}$ for CVD-SiC and 40${\mu}{\textrm}{m}$ for CVD-Si3N4. When the multilayer coated specimen was exposed to the plasma flame with temperature of 500$0^{\circ}C$ for 20 seconds, it showed the weight loss five times less than that of the only pyro-carbon coated specimen.

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Theory of Charged Clusters Linking Nano Science and Technology to Thin Films

  • Hwang, Nong-Moon
    • Proceedings of the Korea Crystallographic Association Conference
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    • pp.20-20
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    • 2002
  • Based on experimental and theoretical analyses, we suggested a new possibility that the CVD diamond films grow not by the atomic unit but by the charged clusters containing a few hundreds of carbon atoms, which form spontaneously in the gas phase [J. Crysta] Growth 62 (1996) 55]. These hypothetical negatively-charged clusters were experimentally confirmed under a typical hot-filament diamond CVD process. Thin film growth by charged clusters or gas phase colloids of a few nanometers was also confirmed in Si and ZrO₂ CVD and appears to be general in many other CVD processes. Many puzzling phenomena in the CVD process such as selective deposition and nanowire growth could be explained by the deposition behavior of charged clusters. Charged clusters were shown to generate and contribute at least partially to the film deposition by thermal evaporation. Origin of charging at the relatively low temperature was explained by the surface ionization described by Saha-Langmuir equation. The hot surface with a high work function favors positive charging of clusters while that of a low work function favors negative charging.

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Evaluation of Microscopic Wear Characteristics for CVD TiN Coatings with SEM Tribosystem (SEM Tribosystem에 의한 CVD TiN막의 미시적 마모 특성 평가)

  • 문봉호
    • Journal of the Korean institute of surface engineering
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    • v.37 no.3
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    • pp.137-145
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    • 2004
  • This study surveys the microscopic wear of CVD TiN coatings in repeated sliding, using the SEM Tribosystem as in-situ system. According to the research, the depth of wear groove and the specific wear amount are changed by the transition of the microscopic wear mode. This investigation leads to the fact that the change of wear characteristics produces the transition of the wear mode. In this survey, four modes are observed for CVD TiN coatings with the thickness of 1.6$\mu\textrm{m}$: ploughing, powder formation, flake formation and coating delimitation. The microscopic wear properties is quantitatively evaluated in terms with the microscopic wear mode and the specific wear amount. These relationships prove that the observation of wear modes with a SEM Tribosystem is useful to evaluate wear properties.

Study for Gas Flow Uniformity Through Changing of Shape At the High Density Plasma CVD (HDP CVD) Chamber (HDP CVD 챔버 형상 변화에 따른 가스 유동 균일성에 대한 연구)

  • Jang, Kyung-Min;Kim, Jin-Tae;Hong, Soon-Il;Kim, Kwang-Sun
    • Journal of the Semiconductor & Display Technology
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    • v.9 no.4
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    • pp.39-43
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    • 2010
  • According to recent changes in industry for the semiconductor device, a gap between patterns in wafer is getting narrow. And this narrow gap makes a failure of uniform deposition between center and edge on the wafer. In this paper, for solving this problem, we analyze and manipulate the gas flow inside of the HDP CVD chamber by using CFD(Computational Fluid Dynamics). This simulation includes design manipulations in heights of the chamber and shape of center nozzle in the upper side of the chamber. The result of simulation shows 1.28 uniformity which is lower 3% than original uniformity.

Intrinsic Reliability Study of ULSI Processes - Reliability of Copper Interconnects (반도체 공정에서의 신뢰성 연구 - 구리 배선의 신뢰성)

  • 류창섭
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • pp.7-12
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    • 2002
  • 반도체 공정에서 구리(Cu) 배선의 미세구조와 신뢰성에 대해 연구하였는데, 특히 CVD Cu와 전기도금 Cu를 사용하여 신뢰성에 대한 texture와 결정 구조의 영향을 연구하였다 CVD Cu의 경우 여러 가지 시드층(seed layer)을 사용함으로서, 결정입자의 크기는 비슷하지만 texture가 전혀 다른 Cu 박막을 얻을 수 있었는데, 신뢰성 검사결과 (111) texture를 가진 Cu 배선의 수명이 (200) texture를 가진 Cu 배선의 수명보다 약 4배 가량 길게 나왔다. 전기도금 Cu 박막의 경우 항상 (111) texture를 갖고 있었으며 결정립의 크기도 CVD Cu의 것보다 더 컸다. Damascene 공법으로 회로 형성한 Cu 배선의 경우에도 전기도금 Cu의 결정립 크기가 CVD Cu의 것보다 더 크게 나타났으며, 신뢰성 검사결과 배선의 수명도 더 길게 나타났는데 그 차이는 0.4 $\mu\textrm{m}$ 이하의 미세선폭 영역에서 더욱 현저했다. 따라서 전기도금 Cu가 CVD Cu보다 신뢰성 측면에서 더 우수한 것으로 판명되었다.

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Gas Phase Analysis of the Diamond CVD Reaction by Hot Filament Method (열필라멘트법에 의한 다이아몬드 CVD반응의 기상 조성 분석)

  • 서문규
    • Journal of the Korean Ceramic Society
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    • v.35 no.11
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    • pp.1233-1239
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    • 1998
  • Gas phase compositions of the hot filament-assisted diamond CVD reaction were analyzed by on-line quadrupole mass analysis(QMA) technique. D2 isotope experiments showed that methance molecules were decomposed into atomic state and then recombined in to acetylene during transport the probe line. Although acetylene or ethylene was supplied instead of methane similar gas compositions were obtained when filament temperature was above 1500$^{\circ}C$ Therefore this system could be assumed near thermal equilibrium state. Filament temperature and reaction pressure variation experiments exhibited the same tendency between acetylene concentration and diamond growth rate and these results implied that acetylene molecule played the role of the reactive species in the diamond CVD reaction.

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Selective Deposition of in-situ doped polysilicon using RTP-CVD for Shallow Junction Formation (얕은 접합형성을 위하여 in-situ 도핑된 폴리실리콘 박막의 RTP-CVD 선택적 증착에 관한 연구)

  • Chun, H.G.;T.Y.Hsieh;Kwon, D.L.g
    • Journal of the Korean Vacuum Society
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    • v.4 no.S1
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    • pp.13-20
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    • 1995
  • As으로 in-situ 도핑된 폴리실리콘 막을 원하는 부위에만 선택적으로 증착시킬 수 있는 RTP-CVD 증착기술이 성공적으로 수행되었다. 막의 증착속도는 도핑량이 증차함에 따라 점차 감소하였으나 As의 양이 5ppm보다 커지자 급격히 감소하였다. 또한 증착속도는 As의 유량이 일정할 때, SiH2CI2 유량에 따라 직선적으로 변화하였다. As 도펀트의 농도는 막내부에 비해 폴리실리콘/실리콘기판의 계면과 표면에서 상대적으로 높게 나타났으며, 특히 증착온도가 낮을 때 As 도펀트의 농도는 더 높아짐을 알 수 있었다. 실리콘 표면에서 약 40-50nm 위치에서 도펀트의 농도천이가 급격히 일어났으며, 그 결과 RTP-CVD공정을 이용할 때 극히 얕고 일정한 깊이분포를 갖는 n+-p junctions were achieved and laterally uniform delineated junctions were also observed using RTP-CVD.

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