• Title/Summary/Keyword: Electrical Compensation

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Recent Progress on Voltage Drop Compensation in Top Emission Organic Light Emitting Diodes (OLED)

  • Jeong, Byoung-Seong
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.1
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    • pp.49-54
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    • 2020
  • The voltage drop due to the thin cathode film at the large size top emission OLED panel was successfully compensated with making electrical contact between thin cathode and anode auxiliary electrode by 355nm wavelength of laser. It was found that the luminance uniformity dramatically increased from around 15% to more than 80% through this electrical compensation between thin cathode and anode auxiliary electrode. Moreover, the removing process for EL materials on the anode auxiliary electrode process by laser was very reliable and stable. Therefore, it is thought that the EL removal method using laser to make electrical contacts is very appropriate to mass production for such a large size top emission OLEDs to obtain high uniformity of luminance.

Electrical Properties and Temperature Stability of Dysprosium and Erbium Co-doped Barium Titanate with Perovskite Structure for X7R MLCCs (Dysprosium과 Erbium이 동시 첨가된 X7R MLCC용 페로브스카이트 BaTiO3의 전기적특성과 온도안정성)

  • Noh, Tai-Min;Kim, Jin-Seong;Ryu, Ji-Seung;Lee, Hee-Soo
    • Journal of the Korean Ceramic Society
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    • v.48 no.4
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    • pp.323-327
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    • 2011
  • The effects of $Dy_2O_3$ and $Er_2O_3$ co-doping on electrical properties and temperature stability of barium titanate ($BaTiO_3$) ceramics were investigated in terms of microstructure and structural analysis. The dielectric constant and the insulation resistance (IR) of 0.7 mol% $Dy_2O_3$ and 0.3 mol% $Er_2O_3$ co-doped dielectrics had about 60% and 20% higher than the values of undoped one, respectively, and the temperature coefficient of capacitance (TCC) met the X7R specification. The addition of $Dy_2O_3$ contributed to electrical properties caused by increase of tetragonality; however, preferential diffusion of $Dy^{3+}$ ions toward A site in $BaTiO_3$ grain exhibited an adverse effect on temperature stability by grain growth. On the other hand, The $Er_2O_3$ addition in $BaTiO_3$ could affect the TCC behavior and the IR with suppression of grain growth caused by reinforcement of grain boundary and electrical compensation. Therefore, the enhanced electrical properties and temperature stability through the co-doping could be deduced from the increase of tetragonality and the suppression of grain growth.

The Influence of Rapid Thermal Annealing Processed Metal-Semiconductor Contact on Plasmonic Waveguide Under Electrical Pumping

  • Lu, Yang;Zhang, Hui;Mei, Ting
    • Journal of the Optical Society of Korea
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    • v.20 no.1
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    • pp.130-134
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    • 2016
  • The influence of Au/Ni-based contact formed on a lightly-doped (7.3×1017cm−3, Zn-doped) InGaAsP layer for electrical compensation of surface plasmon polariton (SPP) propagation under various rapid thermal annealing (RTA) conditions has been studied. The active control of SPP propagation is realized by electrically pumping the InGaAsP multiple quantum wells (MQWs) beneath the metal planar waveguide. The metal planar film acts as the electric contact layer and SPP waveguide, simultaneously. The RTA process can lower the metal-semiconductor electric contact resistance. Nevertheless, it inevitably increases the contact interface morphological roughness, which is detrimental to SPP propagation. Based on this dilemma, in this work we focus on studying the influence of RTA conditions on electrical control of SPPs. The experimental results indicate that there is obvious degradation of electrical pumping compensation for SPP propagation loss in the devices annealed at 400℃ compared to those with no annealing treatment. With increasing annealing duration time, more significant degradation of the active performance is observed even under sufficient current injection. When the annealing temperature is set at 400℃ and the duration time approaches 60s, the SPP propagation is nearly no longer supported as the waveguide surface morphology is severely changed. It seems that eutectic mixture stemming from the RTA process significantly increases the metal film roughness and interferes with the SPP signal propagation.