• Title/Summary/Keyword: Flexible Display

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Direct Fabrication of a-Si:H Thin Film Transistor Arrays on Flexible Substrates: Critical Challenges and Enabling Solutions

  • O'Rourke, Shawn M.;Loy, Douglas E.;Moyer, Curt;Bawolek, Edward J.;Ageno, Scott K.;O'Brien, Barry P.;Marrs, Michael;Bottesch, Dirk;Dailey, Jeff;Naujokaitis, Rob;Kaminski, Jann P.;Allee, David R.;Venugopal, Sameer M.;Haq, Jesmin;Colaneri, Nicholas;Raupp, Gregory B.
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1459-1462
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    • 2008
  • In this paper we describe solutions to address critical challenges in direct fabrication of amorphous silicon thin film transistor (TFTs) arrays for active matrix flexible displays. For all flexible substrates a manufacturable handling protocol in automated display-scale equipment is required. For metal foil substrates the principal challenges are planarization and electrical isolation, and management of stress (CTE mismatch) during TFT fabrication. For plastic substrates the principal challenge is dimensional instability management.

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Direct Fabrication of a-Si:H TFT Arrays on Flexible Substrates;Principal Manufacturing Challenges and Solutions

  • O’Rourke, Shawn M.;Loy, Douglas E.;Moyer, Curt;Ageno, Scott K.;O’Brien, Barry P.;Bottesch, Dirk;Marrs, Michael;Dailey, Jeff;Bawolek, Edward J.;Trujillo, Jovan;Kaminski, Jann;Allee, David R.;Venugopal, Sameer M.;Cordova, Rita;Colaneri, Nick;Raupp, Gregory B.
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.251-254
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    • 2007
  • Principal challenges to $\underline{direct\;fabrication}$ of high performance a-Si:H transistor arrays on flexible substrates include automated handling through bonding-debonding processes, substrate-compatible low temperature fabrication processes, management of dimensional instability of plastic substrates, and planarization and management of CTE mismatch for stainless steel foils. Viable solutions to address these challenges are described.

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Threshold Voltage Instability in a-Si:H TFTs and the Implications for Flexible Displays and Circuits

  • Allee, D.R.;Venugopal, S.M.;Shringarpure, R.;Kaftanoglu, K.;Uppili, S.G.;Clark, L.T.;Vogt, B.;Bawolek, E.J.
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1297-1300
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    • 2008
  • Electrical stress degradation of low temperature, amorphous silicon thin film transistors is reviewed, and the implications for various types of flexible circuitry including active matrix backplanes, integrated drivers and general purpose digital circuitry are examined. A circuit modeling tool that enables the prediction of complex circuit degradation is presented.

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A Study on the Design of Flexible Display Considering the Failure Characteristics of ITO Layer (플렉시블 디스플레이에서 ITO층의 파괴 특성을 고려한 설계연구)

  • Kim, Min Gyu;Park, Sang Baek;Chae, Soo-Won
    • Journal of the Korean Society for Precision Engineering
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    • v.30 no.5
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    • pp.552-558
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    • 2013
  • In recent years the interest on flexible display has been increasing as a future display due to its bendable characteristics. An ITO(indium tin oxide) layer, which is part of a flexible display, can be broken easily while bending because it is made of brittle materials. This brittle property can cause the malfunction of flexible display. To analyze fracture characteristics of ITO layer, bending test was conducted commonly. However, it is not possible to know specific phenomena on bended ITO layer by simple bending test only. Accordingly, in this study, the FE(finite element) model is developed similarly to a real flexible display to analyze stress distribution of flexible display under bending condition, especially on ITO layer. To validate FE model, actual bending test was conducted and the test results were compared with the simulation results by measuring reaction forces during bending. By using the developed model, FE analysis about the effect of design parameter (Thickness & Young's Modulus of BL) on ITO Layer was performed. By explained FE analysis above, this research draws a conclusion of reliable design guide of flexible display, especially on ITO layer.

The influence of glycerol doped PEDOT: PSS and Ag buffer layer on power conversion efficiency of semitransparent organic photovoltaic devices

  • Na, Hyung-Il;Kim, Yong-Hoon;Oh, Min-Soek;Han, Jeong-In;Ju, Byeong-Kwon;Park, Sung-Kyu
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1557-1559
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    • 2009
  • By using optimum doping ratio (10 ~ 20 wt%) of glycerol, the power conversion efficiency (PCE) of organic photovoltaic devices based on poly (3-hexylthiophene) and phenyl-$C_{61}$-butyric acid methyl ester was dramatically increased from 3.23% to 5.03%. Finally, semitransparent organic photovoltaic devices including glycerol doped poly (3,4-ethylenedioxy-thiophene):poly (styrene sulfonate) and thin Ag (< 1 nm) buffer layer typically have shown PCE > 3% with transmittance > 30% in visible ranges.

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Sol-Gel Processed InGaZnO Oxide Semiconductor Thin-Film Transistors for Printed Active-Matrix Displays

  • Kim, Yong-Hoon;Park, Sung-Kyu;Oh, Min-Suk;Kim, Kwang-Ho;Han, Jeong-In
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1002-1004
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    • 2009
  • Solution-processed indium-gallium-zinc-oxide thin-film transistors were fabricated by sol-gel method. By a combinatorial study of InGaZnO multi-component system, optimum molar ratio of In, Ga, and Zn has been selected. By adjusting the In:Ga:Zn molar ratio, TFTs with field-effect mobility of 0.5 ~ 1.5 $cm^2$/V-s, threshold voltage of -5 ~ 5 V, and subthreshold slope of 1.5 ~ 2.5 V/decade were achieved.

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Rigid and flexible displays with solution processed dielectric passivation layer integrated with E-Ink imaging films

  • Krishnamoorthy, Ahila;Spear, Richard;Gebrebrhan, Amanuel;Stifanos, Mehari;Yellowaga, Deborah;O'Rourke, Shawn;Loy, Doug;Dailey, Jeff;Marrs, Michael;Ageno, Scott
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.86-88
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    • 2008
  • Organosiloxane based spin on planarizing dielectrics (PTS-E and PTS-R) were developed for application in flat panel displays as a replacement to conformal chemical vapor deposited SiNx. Here we demonstrate the successful use of siloxane-based material as a passivation layer for active matrix $\alpha$-Si thin film transistors (TFT) on both rigid and flexible substrates.

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Interconnection Technology Based on InSn Solder for Flexible Display Applications

  • Choi, Kwang-Seong;Lee, Haksun;Bae, Hyun-Cheol;Eom, Yong-Sung;Lee, Jin Ho
    • ETRI Journal
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    • v.37 no.2
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    • pp.387-394
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    • 2015
  • A novel interconnection technology based on a 52InSn solder was developed for flexible display applications. The display industry is currently trying to develop a flexible display, and one of the crucial technologies for the implementation of a flexible display is to reduce the bonding process temperature to less than $150^{\circ}C$. InSn solder interconnection technology is proposed herein to reduce the electrical contact resistance and concurrently achieve a process temperature of less than $150^{\circ}C$. A solder bump maker (SBM) and fluxing underfill were developed for these purposes. SBM is a novel bumping material, and it is a mixture of a resin system and InSn solder powder. A maskless screen printing process was also developed using an SBM to reduce the cost of the bumping process. Fluxing underfill plays the role of a flux and an underfill concurrently to simplify the bonding process compared to a conventional flip-chip bonding using a capillary underfill material. Using an SBM and fluxing underfill, a $20{\mu}m$ pitch InSn solder SoP array on a glass substrate was successfully formed using a maskless screen printing process, and two glass substrates were bonded at $130^{\circ}C$.