• Title/Summary/Keyword: IZO thin film

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The Performance of IZO Thin Film with Substrate Temperature for OLED Anode (OLED Anode용 IZO 박막의 기판 온도에 따른 특성)

  • Hong, Jeong-Soo;Kim, Kyung-Hwan
    • Journal of the Semiconductor & Display Technology
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    • v.8 no.3
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    • pp.51-55
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    • 2009
  • We investigated that electrical and optical the properties of IZO thin film for OLED anode application. The IZO thin film was the deposited on the glass substrate by facing targets system as a function of substrate temperature. As a result, the electrical and optical property of IZO thin film prepared with $150^{\circ}C$ was most excellent. To confirm the suitability of the IZO thin film for OLED anode, we evaluated the performance of OLED with IZO/TPD/Alq3/LiF/Al fabricated on IZO anode. Also, the performance of OLED fabricated on IZO anode showed the most excellent at $150^{\circ}C$ substrate temperature.

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Improved Stability Sputtered IZO Thin Film Transistor Using Solution Processed Al2O3 Diffusion Layer (Solution-Processed Al2O3 확산층을 이용한 Sputtering IZO Thin Film Transistor의 안정성 향상)

  • Hwang, Namgyung;Lim, Yooseong;Lee, Jeong Seok;Lee, Sehyeong;Yi, Moonsuk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.5
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    • pp.273-277
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    • 2018
  • This research introduces the sputtered IZO thin film transistor (TFT) with solution-processed $Al_2O_3$ diffusion layer. IZO is one of the most commonly used amorphous oxide semiconductor (AOS) TFT. However, most AOS TFTs have many defects that degrade performance. Especially oxygen vacancy in the active layer. In previous research, aluminum was used as a carrier suppressor by binding the oxygen vacancy and making a strong bond with oxygen atoms. In this paper, we use a solution-processed $Al_2O_3$ diffusion layer to fabricate stable IZO TFTs. A double-layer solution-processed $Al_2O_3$-sputtered IZO TFT showed better performance and stability, compared to normal sputtered IZO TFT.

Evaluation of Electrical Properties of IZO Thin-Film with UV Post-Annealing Treatment Time (IZO 박막 트랜지스터의 UV를 이용한 후열처리 조사 시간에 따른 전기적 특성 평가)

  • Lee, Jae-Yun;Kim, Han-Sang;Kim, Sung-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.2
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    • pp.93-98
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    • 2020
  • We investigated the effect of a post-annealing process using ultraviolet (UV) light on the electrical properties of solution-processed InZnO (IZO) thin-film transistors (TFTs). UV light was irradiated on IZO TFTs for different time periods of 0s, 30s, and 90s. We measured transfer and retention stability curves to evaluate the performance of the fabricated TFTs. In addition, we measured height, amplitude, and phase AFM images to analyze changes in the surface and morphology of the devices. AFM measurements were performed by setting the drive amplitude of the cantilever tip to 47.9 mV in tapping mode, then dividing the device surface into 500 nm × 500 nm. In the case of IZO TFT irradiated with UV for 30s, the electron mobility and Ion/Ioff ratio were improved, the threshold voltage was reduced by approximately 2 V, and the subthreshold swing also decreased form 1.34 V/dec to 1.11 V/dec.

Dynamic Response Behavior of Femtosecond Laser-Annealed Indium Zinc Oxide Thin-Film Transistors

  • Shan, Fei;Kim, Sung-Jin
    • Journal of Electrical Engineering and Technology
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    • v.12 no.6
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    • pp.2353-2358
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    • 2017
  • A femtosecond laser pre-annealing process based on indium zinc oxide (IZO) thin-film transistors (TFTs) is fabricated. We demonstrate a stable pre-annealing process to analyze surface structure change of thin films, and we maintain electrical stability and improve electrical performance. Furthermore, dynamic electrical characteristics of the IZO TFTs were investigated. Femtosecond laser pre-annealing process-based IZO TFTs exhibit a field-effect mobility of $3.75cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $1.77{\times}10^5$, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. And the IZO-based inverter shows a fast switching behavior response. From this study, IZO TFTs from using the femtosecond laser annealing technique were found to strongly affect the electrical performance and charge transport dynamics in electronic devices.

The Effects of the Processing Parameters on the Structure of IZO Transparent Thin Films Deposited by PLD Process (PLD를 이용한 IZO 투명전극의 결정구조에 영향을 미치는 공정인자에 대한 연구)

  • Kim, Pan-Young;Lee, Jai-Yeoul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.317-318
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    • 2007
  • In this study, transparent conducting oxide indium zinc oxide (IZO) thin films were deposited by pulsed laser deposition (PLD) Process as a function of the deposition time on the glass substrates at $400^{\circ}C$. The crystal structures, electrical and optical properties of IZO films analyzed by XRD, AFM, and UV spectrometer. High quality IZO thin film with the resistivity of $9.1{\times}10^{-4}$ ohm cm and optical transmittance over 85% was obtained for sample when deposition time was 15min. Thin films with the preferred orientations along the c axis were observed as the deposition time increased.

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Effect of Thin-Film Thickness on Electrical Performance of Indium-Zinc-Oxide Transistors Fabricated by Solution Process (용액 공정을 이용한 IZO 트랜지스터의 전기적 성능에 대한 박막 두께의 영향)

  • Kim, Han-Sang;Kyung, Dong-Gu;Kim, Sung-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.8
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    • pp.469-473
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    • 2017
  • We investigated the effect of different thin-film thicknesses (25, 30, and 40 nm) on the electrical performance of solution-processed indium-zinc-oxide (IZO) thin-film transistors (TFTs). The structural properties of the IZO thin films were investigated by atomic force microscopy (AFM). AFM images revealed that the IZO thin films with thicknesses of 25 and 40 nm exhibit an uneven distribution of grains, which deforms the thin film and degrades the performance of the IZO TFT. Further, the IZO thin film with a thickness of 30 nm exhibits a homogeneous and smooth surface with a low RMS roughness of 1.88 nm. The IZO TFTs with the 30-nm-thick IZO film exhibit excellent results, with a field-effect mobility of $3.0({\pm}0.2)cm^2/Vs$, high Ion/Ioff ratio of $1.1{\times}10^7$, threshold voltage of $0.4({\pm}0.1)V$, and subthreshold swing of $0.7({\pm}0.01)V/dec$. The optimization of oxide semiconductor thickness through analysis of the surface morphologies can thus contribute to the development of oxide TFT manufacturing technology.

Improvement in Electrical Characteristics of Solution-Processed In-Zn-O Thin-Film Transistors Using a Soft Baking Process (Soft-Baking 처리를 통한 용액 공정형 In-Zn-O 박막 트랜지스터의 전기적 특성 향상)

  • Kim, Han-Sang;Kim, Sung-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.9
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    • pp.566-571
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    • 2017
  • A soft baking process was used to enhance the electrical characteristics of solution-processed indium-zincoxide (IZO) thin-film transistors (TFTs). We demonstrate a stable soft baking process using a hot plate in air to maintain the electrical stability and improve the electrical performance of IZO TFTs. These oxide transistors exhibited good electrical performance; a field-effect mobility of $7.9cm^2/Vs$, threshold voltage of 1.4 V, sub-threshold slope of 0.5 V/dec, and a current on/off ratio of $2.9{\times}10^7$ were measured. To investigate the static response of our solutionprocessed IZO TFTs, simple resistor load type inverters were fabricated by connecting a resistor (5 or $10M{\Omega}$). Our IZO TFTs, which were manufactured using the soft baking process at a baking temperature of $120^{\circ}C$, performed well at the operating voltage, and are therefore a good candidate for use in advanced logic circuits and transparent display backplanes.

Al, Ga, In이 도핑된 ZnO 기반의 투명 전도막 제작

  • Kim, Gyeong-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.138-138
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    • 2009
  • Al, Ga and In doped ZnO thin film were prepared by faing targets sputtering as a function of oxygen gas contents at R.T. Base pressure was $2{\times}10^{-6}torr$, and working pressure was 1mTorr. The properties of thin films on the electrical and optical properties of the deposited films were investigated by using a four-point probe (Chang-min), a Hall Effect measurement (Ecopia) and an UV/VIS spectrometer (HP). The minimum resistivities of AZO, GZO and IZO thin film were $6.5{times}10^{-4}[{\Omega}-cm],5.5{\times}10^{-4}[{\Omega}-cm]$ and $4.29{\times}10^{-4}[{\Omega}-cm]$. The average transmittance of over 80% was seen in the visible range.

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Electrical Characteristics on the IZO thin film use Dye-sensitized Solar Cell (IZO기판을 사용한 염료감응형 태양전지의 전기적 특성)

  • Hong, Chang-Woo;Choi, Yong-Sung;Lee, Kyung-Sup;Hwang, Jong-Sun;Cho, Soo-Young
    • Proceedings of the KIEE Conference
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    • pp.2059-2059
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    • 2011
  • This study focused on the performance characteristics of dye-sensitized solar cell electrodes used in the IZO films were investigated. The experiment measured an sheet resistance and transmittance. Measured results showed 90% transmittance, sheet resistance also 18.3 ${\Omega}$/cm]. The results were indicated applications of dye-sensitized solar cell and optoelectronic devices, transparent electrodes.

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Enhanced Properties of IZO Thin Film Prepared by Nano-Powder Target

  • Ji, Seung-Hun;Youn, Hyun-Oh;Seo, Sung-Bo;Kim, Mi-Sun;Sohn, Sun-Young;Kim, Jong-Jae;Kim, Hwa-Min
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1428-1429
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    • 2009
  • Compared to the indium zinc oxide (IZO) film fabricated by micro-powder target, the IZO film with nano-powder target exhibited improved optoelectronic properties of wide bandgap, high transmittance, surface uniformity, and low sheet resistance due to the high film density.

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