• Title/Summary/Keyword: Maximum oscillation frequency

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Analysis of Cuoff Frequency and Maximum Oscillation Frequency Characteristics for $0.13{\mu}m$ CMOSFET ($0.13{\mu}m$ CMOSFET의 차단주파수 및 최대진동주파수 특성 분석)

  • Kim, Jong-HyucK;Lee, Seong-Hearn;Kim, Young-Wug
    • Proceedings of the IEEK Conference
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    • pp.539-540
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    • 2006
  • The dependence of cutoff frequency and maximum oscillation frequency of $0.13{\mu}m$ CMOS transistors on layout parameters such as the unit gate width and gate finger number is measured and analyzed in this paper. This information will be very useful for high performance RF IC design.

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A Study on the Simulation of AlGaN/GaN HEMT Power Devices (AlGaN/GaN HEMT 전력소자 시뮬레이션에 관한 연구)

  • Son, Myung Sik
    • Journal of the Semiconductor & Display Technology
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    • v.13 no.4
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    • pp.55-58
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    • 2014
  • The next-generation AlGaN/GaN HEMT power devices need higher power at higher frequencies. To know the device characteristics, the simulation of those devices are made. This paper presents a simulation study on the DC and RF characteristics of AlGaN/GaN HEMT power devices. According to the reduction of gate length from $2.0{\mu}m$ to $0.1{\mu}m$, the simulation results show that the drain current at zero gate voltage increases, the gate capacitance decreases, and the maximum transconductance increases, and thus the cutoff frequency and the maximum oscillation frequency increase. The maximum oscillation frequency maintains higher than the cutoff frequency, which means that the devices are useful for power devices at very high frequencies.

K-band MMIC Oscillator Design Using the PHEMT (PHEMT소자를 이용한 K-band MMIC 발진 설계)

  • 이지형;채연식;조희철;윤용순;이진구
    • Proceedings of the IEEK Conference
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    • pp.88-91
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    • 2000
  • An MMIC oscillator operating at the 24.55 GHz has been designed using 0.2 ${\mu}{\textrm}{m}$AlGaAs/InGaAs/GaAs Pseudomorphic HEMT technology. The active device used in the oscillator design has a 0.2 ${\mu}{\textrm}{m}$ gate length PHEMT with 4$\times$80 ${\mu}{\textrm}{m}$ gate width. We obtained 4.08 dB of S$_{21}$ gain and 317 mS/mm of transconductance, and extrapolated unit current gain cut-off frequency (f$_{T}$) and maximum oscillation frequency (fmax) were 62 GHz and 120 GHz, respectively. The circuit are based on a series feedback and negative resistance topology. Microstrip line open stub is used to terminating. The oscillator circuits has designed for delivering maximum power to load and conjugated matching. The simulated small signal negative resistance was 50 Ω. We obtained 1.002 of loop gain and 0.0005$^{\circ}$angle from the simulation by HP libra 6.1. The layout for oscillator is 1.2$\times$1.8 $\textrm{mm}^2$.>.

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Extraction of Gate-Length Dependent Maximum Oscillation Frequency of Nano MOSFET (Nano MOSFET의 게이트길이 종속 최대진동주파수 추출)

  • Kim, Joung- Hyck;Lee, Young-Taek;Choi, Mun-Sung;Lee, Seong-Hearn
    • Proceedings of the IEEK Conference
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    • pp.817-820
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    • 2005
  • The gate-length dependence of maximun oscillation frequency $f_{MAX}$ is modeled by using scaling equations of equivalent-circuit parameters extracted from measured S-parameters of Nano-scale MOSFETs. The accuracy of the modeled $f_{MAX}$ is verified by observing good agreements with measured ones. It is observed that the $f_{MAX}$ initially increases with decreasing $L_g$ and then $f_{MAX}$ becomes saturated from $L_g$ less than 65nm.

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A G-Band Frequency Doubler Using a Commercial 150 nm GaAs pHEMT Technology

  • Lee, Iljin;Kim, Junghyun;Jeon, Sanggeun
    • Journal of electromagnetic engineering and science
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    • v.17 no.3
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    • pp.147-152
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    • 2017
  • This paper presents a frequency doubler operating at G-band that exceeds the maximum oscillation frequency ($f_{max}$) of the given transistor technology. A common-source transistor is biased on class-B to obtain sufficient output power at the second harmonic frequency. The input and output impedances are matched to achieve high output power and high return loss. The frequency doubler is fabricated in a commercial 150-nm GaAs pHEMT process and obtains a measured conversion gain of -5.5 dB and a saturated output power of -7.5 dBm at 184 GHz.

Optimization Study on the Epitaxial Structure for 100nm-Gate MHEMTs with InAlAs/InGaAs/GaAs Heterostructure (InAlAs/InGaAs/GaAs 100 nm-게이트 MHEMT 소자의 에피 구조 최적화 설계에 관한 연구)

  • Son, Myung-Sik
    • Journal of the Semiconductor & Display Technology
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    • v.10 no.4
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    • pp.107-112
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    • 2011
  • This paper is for improving the RF frequency performance of a fabricated 100nm ${\Gamma}$-gate MHEMT, scaling down vertically for the epitaxy-structure layers of the device. Hydrodynamic simulation parameters are calibrated for the fabricated MHEMT with the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}$As heterostructure grown on the GaAs substrate. With these calibrated parameters, simulations for the vertically-scaled epitaxial layers of the device are performed and analyzed for DC/RF characteristics, including the quantization effect due to the thickness reduction of InGaAs channel layer. A newly designed epitaxy-structure device shows higher extrinsic transconductance, $g_m$ of 1.556 S/mm, and higher frequency performance, $f_T$ of 222.5 GHz and $f_{max}$ of 849.6 GHz.

Study on the Breakdown Simulation for InAlAs/InGaAs/GaAs MHEMTs with an InP-etchstop Layer (InP 식각정지층을 갖는 InAlAs/InGaAs/GaAs MHEMT 소자의 항복 특성 시뮬레이션에 관한 연구)

  • Son, Myung Sik
    • Journal of the Semiconductor & Display Technology
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    • v.11 no.2
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    • pp.53-57
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    • 2012
  • This paper is for accurately simulating the breakdown of MHEMTs with an InP-etchstop layer. 2D-Hydrodynamic simulation parameters are investigated and calibrated for the InP-epitaxy layer. With these calibrated parameters, simulations are performed and analyzed for the breakdown of devices with an InP-etchstop layer. In the paper, the impact-ionization coefficients, the mobility degradation due to doping concentration, and the saturation velocity for InP-epitaxy layer are newly calibrated for more accurate breakdown simulation.

High Performance 50 nm Metamorphic HEMTs for Millimeter-wave Applications (밀리미터파 응용을 위한 우수한 성능의 50 nm Metamorphic HEMTs)

  • Ryu, Keun-Kwan;Kim, Sung-Chan
    • Journal of IKEEE
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    • v.16 no.2
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    • pp.116-120
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    • 2012
  • We reported on a high performance InGaAs/InAlAs metamorphic HEMT with 50 nm gate length on a GaAs substrate. The fabricated $50nm{\times}60{\mu}m$ MHEMT showed good DC and RF characteristics. Typical drain current density of 740 mA/mm and extrinsic transconductance(gm) of 1.02 S/mm were obtained with our devices. The current gain cut-off frequency(fT) and maximum oscillation frequency(fmax) obtained for the fabricated MHEMT device were 430 GHz and 406 GHz, respectively.

Transferrable single-crystal silicon nanomembranes and their application to flexible microwave systems

  • Seo, Jung-Hun;Yuan, Hao-Chih;Sun, Lei;Zhou, Weidong;Ma, Zhenqiang
    • Journal of Information Display
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    • v.12 no.2
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    • pp.109-113
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    • 2011
  • This paper summarizes the recent fabrication and characterizations of flexible high-speed radio frequency (RF) transistors, PIN-diode single-pole single-throw switches, as well as flexible inductors and capacitors, based on single-crystalline Si nanomembranes transferred on polyethylene terephthalate substrates. Flexible thin-film transistors (TFTs) on plastic substrates have reached RF operation speed with a record cut-off/maximum oscillation frequency ($f_T/f_{max}$) values of 3.8/12 GHz. PIN diode switches exhibit excellent ON/OFF behaviors at high RF frequencies. Flexible inductors and capacitors compatible with high-speed TFT fabrication show resonance frequencies ($f_{res}$) up to 9.1 and 13.5 GHz, respectively. Robust mechanical characteristics were also demonstrated with these high-frequency passives components.

Emitter structure dependence of the high frequency performance of AlGaAs/GaAs HBTs (에미터 구조변화에 따른 AlGaAs/GaAs HBT의 고주파 특성)

    • Journal of the Korean Vacuum Society
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    • v.9 no.2
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    • pp.167-171
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    • 2000
  • Emitter structure effects on the characteristics of AlGaAs/GaAs HBTs have been investigated. Cut-off frequency and maximum oscillation frequency were changed with emitter dimension, and it was attributed to the variation of resistance and junction capacitance with emitter structure. Emitter perimeter and junction area also affected the high frequency performance of HBTs.

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