• Title/Summary/Keyword: Metamorphic HEMT (MHEMT)

Search Result 10, Processing Time 0.292 seconds

Optimization Study on the Epitaxial Structure for 100nm-Gate MHEMTs with InAlAs/InGaAs/GaAs Heterostructure (InAlAs/InGaAs/GaAs 100 nm-게이트 MHEMT 소자의 에피 구조 최적화 설계에 관한 연구)

  • Son, Myung-Sik
    • Journal of the Semiconductor & Display Technology
    • /
    • v.10 no.4
    • /
    • pp.107-112
    • /
    • 2011
  • This paper is for improving the RF frequency performance of a fabricated 100nm ${\Gamma}$-gate MHEMT, scaling down vertically for the epitaxy-structure layers of the device. Hydrodynamic simulation parameters are calibrated for the fabricated MHEMT with the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}$As heterostructure grown on the GaAs substrate. With these calibrated parameters, simulations for the vertically-scaled epitaxial layers of the device are performed and analyzed for DC/RF characteristics, including the quantization effect due to the thickness reduction of InGaAs channel layer. A newly designed epitaxy-structure device shows higher extrinsic transconductance, $g_m$ of 1.556 S/mm, and higher frequency performance, $f_T$ of 222.5 GHz and $f_{max}$ of 849.6 GHz.

Study on the Breakdown Simulation for InAlAs/InGaAs/GaAs MHEMTs with an InP-etchstop Layer (InP 식각정지층을 갖는 InAlAs/InGaAs/GaAs MHEMT 소자의 항복 특성 시뮬레이션에 관한 연구)

  • Son, Myung Sik
    • Journal of the Semiconductor & Display Technology
    • /
    • v.11 no.2
    • /
    • pp.53-57
    • /
    • 2012
  • This paper is for accurately simulating the breakdown of MHEMTs with an InP-etchstop layer. 2D-Hydrodynamic simulation parameters are investigated and calibrated for the InP-epitaxy layer. With these calibrated parameters, simulations are performed and analyzed for the breakdown of devices with an InP-etchstop layer. In the paper, the impact-ionization coefficients, the mobility degradation due to doping concentration, and the saturation velocity for InP-epitaxy layer are newly calibrated for more accurate breakdown simulation.

Calibration Study on the DC Characteristics of GaAs-based $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ Heterostructure Metamorphic HEMTs (GaAs 기반 $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ 이종접합 구조를 갖는 MHEMT 소자의 DC 특성에 대한 calibration 연구)

  • Son, Myung-Sik
    • Journal of the Semiconductor & Display Technology
    • /
    • v.10 no.1
    • /
    • pp.63-73
    • /
    • 2011
  • Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with conventional pseudomorphic HEMTs (PHEMTs). For the optimized device design and development, we have performed the calibration on the DC characteristics of our fabricated 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}$As heterostructure on the GaAs wafer using the hydrodynamic transport model of a commercial 2D ISE-DESSIS device simulator. The well-calibrated device simulation shows very good agreement with the DC characteristic of the 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.

Simulation Study on the Breakdown Enhancement for InAlAs/InGaAs/GaAs MHEMTs with an InP-Etchstop Layer (InP 식각정지층을 갖는 InAlAs/InGaAs/GaAs MHEMT 소자의 항복 전압 개선에 관한 연구)

  • Son, Myung Sik
    • Journal of the Semiconductor & Display Technology
    • /
    • v.12 no.3
    • /
    • pp.23-27
    • /
    • 2013
  • This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess structures has been simulated and analyzed for the breakdown of the devices with the InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2V to almost 4V and that the saturation current at gate voltage of 0V is reduced from 90mA to 60mA at drain voltage of 2V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier layer and the $Si_3N_4$ passivation layer deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer. In the paper, the fully-recessed asymmetric gate-recess structure at the drain side shows the on-breakdown voltage enhancement from 2V to 4V in the MHEMTs.

Simulation Study on the Breakdown Characteristics of InGaAs/InP Composite Channel MHEMTs with an InP-Etchstop Layer (InP 식각정지층을 갖는 MHEMT 소자의 InGaAs/InP 복합 채널 항복 특성 시뮬레이션)

  • Son, Myung Sik
    • Journal of the Semiconductor & Display Technology
    • /
    • v.12 no.4
    • /
    • pp.21-25
    • /
    • 2013
  • This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2 V to 4 V in the previous work. This is because the surface effect at the drain side decreases the channel current and the impact ionization in the channel at high drain voltage. In order to increase the breakdown voltage at the same asymmetric gate-recess structure, the InGaAs channel structure is replaced with the InGaAs/InP composite channel in the simulation. The simulation results with InGaAs/InP channel show that the breakdown voltage increases to 6V in the MHEMT as the current decreases. In this paper, the simulation results for the InGaAs/InP channel are shown and analyzed for the InGaAs/InP composite channel in the MHEMT.

Design and Fabrication of 100 GHz MIMIC Amplifier Using Metamorphic HEMT (Metamorphic HEMT를 이용한 100GHz MIMIC 증폭기의 설계 및 제작)

  • 안단;이복형;임병옥;이문교;백용현;채연식;박형무;이진구
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.41 no.9
    • /
    • pp.25-30
    • /
    • 2004
  • In this Paper, the 0.1 w InGaAs/InAlAs/GaAs Metamorphic HEMT, which is applicable to MIMIC, and a 100 GHz MIMIC amplifier were designed and fabricated. The DC characteristics of MHEMT are 640 mA/mm of drain current density, 653 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 173 GHz and the maximum oscillation frequency(fmax) is 271 GHz. A 100 GHz amplifier was designed using 0.1${\mu}{\textrm}{m}$ MHEMT and CPW technology. The measured results from the 100 GHz MIMIC amplifiers show good S21 gain of 10.1 dB and 12.74 dB at 100 GHz and 97.8 GHz, respectively.

High LO-RF Isolation 94 GHz MMIC Single-balanced Mixer (높은 LO-RF 격리 특성의 94 GHz MMIC Single-balanced Mixer)

  • An, Dan;Lee, Bok-Hyung;Lim, Byeong-Ok;Kim, Sung-Chan;Lee, Sang-Jin;Lee, Mun-Kyo;Shin, Dong-Hoon;Park, Hyung-Moo;Park, Hyun-Chang;Kim, Sam-Dong;Rhee, Jin-Koo
    • Proceedings of the IEEK Conference
    • /
    • /
    • pp.765-768
    • /
    • 2005
  • In this paper, high LO-RF isolation 94 GHz MMIC single-balanced mixer was designed and fabricated using a branch line coupler and a ${\lambda}/4$ transmission line. The 94 GHz MMIC single-balanced mixer was designed using the 0.1 ${\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT(MHEMT) diode. The fabricated MHEMT was obtained the cut-off frequency($f_T$) of 189 GHz and the maximum oscillation frequency($f_{max}$) of 334 GHz. The designed MMIC single-balanced mixer was fabricated using 0.1 ${\mu}m$ MHEMT MMIC process. From the measurement, the conversion loss of the single-balanced mixer was 23.1 dB at an LO power of 10 dBm. The LO-RF isolations of single-balanced mixer was obtained 45.5 dB at 94.19 GHz. We obtained in this study a higher LO-RF isolation compared to some other balanced mixers in millimeter-wave frequencies.

  • PDF

Simulation Design of MHEMT Power Devices with High Breakdown Voltages (고항복전압 MHEMT 전력소자 설계)

  • Son, Myung-Sik
    • Journal of the Korean Vacuum Society
    • /
    • v.22 no.6
    • /
    • pp.335-340
    • /
    • 2013
  • This paper is for the simulation design to enhance the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess and channel structures has been simulated and analyzed for the breakdown of the MHEMT devices. The fully removed recess structure at the drain side of MHEMT shows that the breakdown voltage enhances from 2 V to almost 4 V as the saturation current at gate voltage of 0 V is reduced from 90 mA to 60 mA at drain voltage of 2 V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier and the $Si_3N_4$ passivation layers deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer and thus the impact ionization in the channel become smaller. In addition, the replaced InGaAs/InP composite channel with the same thickness in the same asymmetrically recessed structure increases the breakdown voltage to 5 V due to the smaller impact ionization and mobility of the InP layer at high drain voltage.

A Study on the Breakdown in MHEMTs with InAlAs/InGaAs Heterostructure Grown on the GaAs substrate (InAlAs/InGaAs/GaAs MHEMT 소자의 항복 특성에 관한 연구)

  • Son, Myung-Sik
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.48 no.11
    • /
    • pp.1-8
    • /
    • 2011
  • One of the most important parameters that limit maximum output power of transistor is breakdown. InAlAs/InGaAs/GaAs Metamorphic HEMTs (MHEMTs) have some advantages, especially for cost, compared with InP-based ones. However, GaAs-based MHEMTs and InP-based HEMTs are limited by lower breakdown voltage for output power even though they have good microwave and millimeter-wave frequency performance with lower minimum noise figure. In this paper, InAlAs/$In_xGa_{1-x}As$/GaAs MHEMTs are simulated and analyzed for breakdown. The parameters affecting breakdown are investigated in the fabricated 0.1-${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ heterostructure on the GaAs wafer using the hydrodynamic transport model of a 2D commercial device simulator. The impact ionization and gate field effect in the fabricated device including deep-level traps are analyzed for breakdown. In addition, Indium mole-fraction-dependent impact ionization rates are proposed empirically for $In_{0.52}Al_{0.48}As/In_xGa_{1-x}As$/GaAs MHEMTs.

DC ∼ 45 GHz CPW Wideband Distributed Amplifier Using MHEMT (MHEMT를 이용한 DC ∼ 45 GHz CPW 광대역 분산 증폭기 설계 및 제작)

  • Jin Jin-Man;Lee Bok-Hyung;Lim Byeong-Ok;An Dan;Lee Mun-Kyo;Lee Sang-Jin;Ko Du-Hyun;Beak Yong Hyun;Oh Jung-Hun;Chae Yeon-Sik;Park Hyung-Moo;Kim Sam-Dong;Rhee Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.41 no.12
    • /
    • pp.7-12
    • /
    • 2004
  • In this paper, CPW wideband distributed amplifier was designed and fabricated using 0.1 $\mum$ InGaAs/InAlAs/GaAs Metamorphic HEMT(High Electron Mobility Transistor). The DC characteristics of MHEMT are 442 mA/mm of drain current density, 409 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 140 GHz and the maximum oscillation frequency(fmax) is 447 GHz. The distributed amplifier was designed using 0.1 $\mum$ MHEMT and CPW technology. We designed the structure of CPW curve, tee and cross to analyze the discontinuity characteristics of the CPW line. The MIMIC circuit patterns were optimized electromagnetic field through momentum. The designed distributed amplifier was fabricated using our MIMIC standard process. The measured results show S21 gain of above 6 dB from DC to 45 GHz. Input reflection coefficient S11 of -10 dB, and output reflection coefficient S22 of -7 dB at 45 GHz, respectively. The chip size of the fabricated CPW distributed amplifier is 2.0 mm$\times$l.2 mm.