• Title/Summary/Keyword: Millimeter wave

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A Transformer-Matched Millimeter-Wave CMOS Power Amplifier

  • Park, Seungwon;Jeon, Sanggeun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.5
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    • pp.687-694
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    • 2016
  • A differential power amplifier operating at millimeter-wave frequencies is demonstrated using a 65-nm CMOS technology. All of the input, output, and inter-stage network are implemented by transformers only, enabling impedance matching with low loss and a wide bandwidth. The millimeter-wave power amplifier exhibits measured small-signal gain exceeding 12.6 dB over a 3-dB bandwidth from 45 to 56 GHz. The output power and PAE are 13 dBm and 11.7%, respectively at 50 GHz.

V-band Self-heterodyne Wireless Transceiver using MMIC Modules

  • An, Dan;Lee, Mun-Kyo;Lee, Sang-Jin;Ko, Du-Hyun;Jin, Jin-Man;Kim, Sung-Chan;Kim, Sam-Dong;Park, Hyun-Chang;Park, Hyung-Moo;Rhee, Jin-Koo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.3
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    • pp.210-219
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    • 2005
  • We report on a low-cost V-band wireless transceiver with no use of any local oscillator in the receiver block using a self-heterodyne architecture. V-band millimeter-wave monolithic IC (MMIC) modules were developed to demonstrate the wireless transceiver using coplanar waveguide (CPW) and GaAs PHEMT technologies. The MMIC modules such as the MMIC low noise amplifier (LNA), medium power amplifier (MPA) and the up/down-mixer were installed in the transceiver system. To interface the MMIC chips with the component modules for the transceiver system, CPW-to-waveguide fin-line transition modules of WR-15 type were designed and fabricated. The fabricated LNA modules showed a $S_{21}$ gain of 8.4 dB and a noise figure of 5.6 dB at 58 GHz. The MPA modules exhibited a gain of 6.9 dB and a $P_{1dB}$ of 5.4 dBm at 58 GHz. The conversion losses of the up-mixer and the down-mixer module were 14.3 dB at a LO power of 15 dBm, and 19.7 dB at a LO power of 0 dBm, respectively. From the measurement of V-band wireless transceiver, a conversion gain of 0.2 dB and a $P_{1dB}$ of 5.2 dBm were obtained in the transmitter block. The receiver block showed a conversion gain of 2.1 dB and a $P_{1dB}$ of -18.6 dBm. The wireless transceiver system demonstrated a successful data transfer within a distance of 5 meters.

Design and Fabrication of the 0.1${\mu}{\textrm}{m}$ Г-Shaped Gate PHEMT`s for Millimeter-Waves

  • Lee, Seong-Dae;Kim, Sung-Chan;Lee, Bok-Hyoung;Sul, Woo-Suk;Lim, Byeong-Ok;Dan-An;Yoon, yong-soon;kim, Sam-Dong;Shin, Dong-Hoon;Rhee, Jin-koo
    • Journal of electromagnetic engineering and science
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    • v.1 no.1
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    • pp.73-77
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    • 2001
  • We studied the fabrication of GaAs-based pseudomorphic high electron mobility transistors(PHEMT`s) for the purpose of millimeter- wave applications. To fabricate the high performance GaAs-based PHEMT`s, we performed the simulation to analyze the designed epitaxial-structures. Each unit processes, such as 0.1 m$\mu$$\Gamma$-gate lithography, silicon nitride passivation and air-bridge process were developed to achieve high performance device characteristics. The DC characteristics of the PHEMT`s were measured at a 70 $\mu$m unit gate width of 2 gate fingers, and showed a good pinch-off property ($V_p$= -1.75 V) and a drain-source saturation current density ($I_{dss}$) of 450 mA/mm. Maximum extrinsic transconductance $(g_m)$ was 363.6 mS/mm at $V_{gs}$ = -0.7 V, $V_{ds}$ = 1.5 V, and $I_{ds}$ =0.5 $I_{dss}$. The RF measurements were performed in the frequency range of 1.0~50 GHz. For this measurement, the drain and gate voltage were 1.5 V and -0.7 V, respectively. At 50 GHz, 9.2 dB of maximum stable gain (MSG) and 3.2 dB of $S_{21}$ gain were obtained, respectively. A current gain cut-off frequency $(f_T)$ of 106 GHz and a maximum frequency of oscillation $(f_{max})$ of 160 GHz were achieved from the fabricated PHEMT\\`s of 0.1 m$\mu$ gate length.h.

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High Gain and Broadband Millimeter-wave MHEMT Cascode Amplifier (고이득 및 광대역 특성의 밀리미터파 MHEMT Cascode 증폭기)

  • An, Dan;Lee, Bok-Hyung;Lim, Byeong-Ok;Lee, Mun-Kyo;Baek, Yong-Hyun;Chae, Yeon-Sik;Park, Hyung-Moo;Rhee, Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.8
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    • pp.105-111
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    • 2004
  • In this paper, millimeter-wave high gain and broadband MHEMT cascode amplifiers were designed and fabricated. The 0.1 ${\mu}{\textrm}{m}$ InGaAs/InAlAs/GaAs Metamorphic HEMT was fabricated for cascode amplifiers. The DC characteristics of MHEMT are 640 mA/mm of drain current density, 653 mS/mm of maximum transconductance. The current gain cut-off frequency(f$_{T}$) is 173 GHz and the maximum oscillation frequency(f$_{max}$) is 271 GHz. By using the CPW transmission line, the cascode amplifier was designed the matched circuit for getting the broadband characteristics. The designed amplifier was fabricated by the MHEMT MIMIC process that was developed through this research. As the results of measurement, the 1 stage amplifier obtained 3 dB bandwidth of 37 GHz between 31.3 to 68.3 GHz. Also, this amplifier represents the S21 gain with the average 9.7 dB gain in bandwidth and the maximum gain of 11.3 dB at 40 GHz. The 2 stage amplifier has the broadband characteristics with 3 dB bandwidth of 29.5 GHz in the frequency range from 32.5 to 62.0 GHz. The 2 stage cascode amplifier represents the high gain characteristics with the average gain of 20.4 dB in bandwidth and the maximum gain of 22.3 dB at 36.5 GHz.z.z.

Studies on Fabrication of Novel Micromachined SIR. Bandpass Filter Using DAMLs (DAML 구조를 이용한 새로운 형태의 SIR대역 통과 여파기의 설계 및 제작)

  • Baek Tae-Jong;Ko Baek-Seok;Kim Sung-Chan;Lim Byeong-Ok;An Dan;Kim Soon=Koo;Shin Dong-Hoon;Rhee Jin-Koo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.7 s.98
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    • pp.760-767
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    • 2005
  • In this paper, we proposed a new type SIR bandpass filter using DAMLs. This filter is consisted of 2 layers with MEMS resonator layer and CPW feed line. DAMLs ring resonator is elevated with $10{\mu}m$ height from GaAs substrate. Using MEMS processing, we are able to realize SIR bandpass filter easily. Furthermore it is useful to integrate on conventional MMICs because it has CPW interfaces and ring resonator is isolated from substrate by air-gap. We optimized and measured the results that $S_{21}$ attenuation at rejected band is over 15 dB, insertion loss is inside the limit of 3 dB, and relative bandwidth is about $10\%$ at 60 GHz.

Study on the Design and Fabrication of $180^{\circ}$ Hybrid Ring Coupler using MEMS Technology for millimeter wave applications (마이크로머시닝 기술을 이용한 새로운 형태의 밀리미터파 적용을 위한 $180^{\circ}$ 링 하이브리드 결합기의 설계와 제작에 관한 연구)

  • Ko Baek Seok;Baek Tae Jong;Lim Byeong Ok;Kim Sung Chan;Shin Dong Hoon;Rhee Jin Koo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.42 no.3 s.333
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    • pp.33-38
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    • 2005
  • In this paper, we have designed and fabricated a hybrid ring coupler to prove the fabrication possibility of various passive components, applying millimeter wave using newly proposed transmission lines, i.e. BAMLs. The characteristics of the fabricated hybrid ing coupler were a the S31(coupling) of 3.58 dB, the S21(thru) of 3.31 dB at the 60 GHz center frequency, the S11(return loss) over 16.17 dB, S41(isolation) over 55 dB at 61 GHz, and the phase difference between port 2 and port 3 of $180{\pm}loat$ 60GHz. In order to reduce the size of hybrid ring coupler, we designed the hybrid ring coupler which inserts a slow wave structure. With this structure, we were able to reduce the hybrid ring coupler by $33\%$ area.

Study Of Millimeter-Wave Passive Imaging Sensor Using the Horn Array Antenna (혼 배열 안테나를 이용한 밀리미터파 수동 이미징 센서 연구)

  • Lim, Hyun-Jun;Chae, Yeon-Sik;Kim, Mi-Ra;Rhee, Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.47 no.2
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    • pp.74-79
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    • 2010
  • We have designed a millimeter-wave passive imaging sensor with multi-horn antenna array. Six horn array antenna is suggested that it is integrated into one housing, and this antenna is effectively configurated m space to assemble with LNA of WR-10 structure. Antenna is designed to have the peak gain of 17.5dBi at the center frequency of 94GHz, and the return loss of less than -25dB in W-band, and the small aperture size of $6mm{\times}9mm$ for antenna configuration with high resolution. LNA is designed to have total gain of more than 55dB and noise figure of less than 5dB for good sensitivity. We made a detector for DC output translation of millimeter-wave signal with zero bias Schottky diode. It is shown that good sensitivity of more than 500mV/mW.

Study of performance and characteristics of InP-composite channel MHEMT for High Breakdown Voltage (높은 항복전압을 위한 InP 합성 채널 MHEMT의 성능과 특성에 대한 연구)

  • Choi, Seok-Gyu;Beak, Young-Hyun;Han, Min;Lee, Seong-Dea;Rhee, Jin-Koo
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.467-468
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    • 2006
  • To perform the comparative study, we experimented on two differential epitaxial structures, the conventional Metamorphic High Electron Mobility Transistor (MHEMT) using the InAlAs/InGaAs structure and the InP-composite channel MHEMT adopting the InAlAs/InGaAs/InP/n-InP structure. Compared to the conventional MHEMT, the InP-composite channel MHEMT shows improved breakdown performance; over about 3.5 V. This increased breakdown voltage can be explained by the lower impact ionization coefficient of the InP-composite channel MHEMT than that of the conventional MHEMT.

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Focal Plane Irradiance from MCF in Millimeter Wave Systems

  • Jong Gil Lee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.8 no.3
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    • pp.529-534
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    • 2004
  • Millimeter waves are potentially useful for high resolution ranging and imaging in low optical visibility conditions such as fog and smoke. Also, They are used for wide band communications. However, it is necessary to develop a theoretical and experimental understanding of millimeter wave propagation to assess the performance of millimeter wave systems. The intensity fluctuations and mutual coherence function (MCF) describe atmospheric effects on the millimeter wave propagation. Using the quasi-optical method (QOM), an efficient and practical method was suggested to obtain the intensity distribution of the antenna focal plane from MCF which can be determined using meteorological data.

Study of Design and Fabrication of GaAs Varactor diode (GaAs 버렉터 다이오드의 설계와 제작에 관한 연구)

  • Choi, Seok-Gyu;Baek, Young-Hyun;Beak, Tea-Jong;Kim, Mi-Ra;Rhee, Jin-Koo
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.387-388
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    • 2008
  • In this paper, we have designed and fabricated hyperabrupt varactor diodes. Capacitance variations of hyperabrupt-doped varactor diodes are larger than those of uniform-doped varactor diodes. The measured reverse breakdown voltage of the fabricated varactor diodes was about 20 V. For the anode contact diameter of $50\;{\mu}m$, the maximum capacitance of the fabricated varactor diode was 2.1 pF and the minimum capacitance 0.44 pF. Therefore, the $C_{max}/C_{min}$ ratio was 4.77. Also, for the anode contact diameter of $60\;{\mu}m$, the maximum and minimum capacitances were 2.9 and 0.62 pF, respectively. And, thus, the $C_{max}/C_{min}$ ratio was 4.64.

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