• Title/Summary/Keyword: Organic gate insulator

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Effects of Process Induced Damages on Organic Gate Dielectrics of Organic Thin-Film Transistors

  • Kim, Doo-Hyun;Kim, D.W.;Kim, K.S.;Moon, J.S.;KIM, H.J.;Kim, D.C.;Oh, K.S.;Lee, B.J.;You, S.J.;Choi, S.W.;Park, Y.C.;Kim, B.S.;Shin, J.H.;Kim, Y.M.;Shin, S.S.;Hong, Mun-Pyo
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1220-1224
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    • 2007
  • The effects of plasma damages to the organic thin film transistor (OTFT) during the fabrication process are investigated; metal deposition process on the organic gate insulator by plasma sputtering mainly generates the process induced damages of bottom contact structured OTFTs. For this study, various deposition methods (thermal evaporation, plasma sputtering, and neutral beam based sputtering) and metals (gold and Indium-Tin Oxide) have been tested for their damage effects onto the Poly 4-vinylphenol(PVP) layer surface as an organic gate insulator. The surface damages are estimated by measuring surface energies and grain shapes of organic semiconductor on the gate insulator. Unlike thermal evaporation and neutral beam based sputtering, conventional plasma sputtering process induces serious damages onto the organic surface as increasing surface energy, decreasing grain sizes, and degrading TFT performance.

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A Study for Electrical Properties of Organic-Inorganic Hybrid TFT on Surface Treated Organic Gate Insulator by $O_2$ Plasma

  • Gong, Su-Cheol;Choe, Jin-Eun;Jeong, U-Ho;Choe, Yong-Jun;Jeon, Hyeong-Tak;Park, Hyeong-Ho;Ryu, Sang-Uk;Jang, Ho-Jeong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • pp.73-73
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    • 2008
  • LCD, OLED 등의 평판디스플레이와 RFID tag, smart card 등의 구동 소자 등 넓은 산업 분야에 적용하기 위하여 PVP 유기물과 병합된 ZnO 산화물을 이용하여 차세대 박막트랜지스터의 제작 공정과 전기적 특성을 조사하였다. 또한 제작된 박막트랜지스터의 전기적 특성을 향상시키기 위하여 유, 무기 박막의 특성을 분석하고, $O_2$ plasma 처리를 통하여 유-무기 박막간 계면 접합력 및 계면 효과의 변화특성이 OITFT 특성에 미치는 영향을 조사하였다.

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Low temperature curable organic gate insulator for organic field-effect transistors

  • Kim, Joo-Young;Jung, Myung-Sup;Lee, Sang-Yoon;Kim, Jong-Min;Kim, Jang-Joo
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.664-666
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    • 2008
  • Low-temperature curable organic insulator was prepared through blending of polyimide type base resin and cross-linking agent. The newly developed resin can be formed into films using a wet process and cured at $130^{\circ}C$. Using the low temperature cured film as the gate dielectric layer, the field effect mobility of $0.15\;cm^2/V{\cdot}s$ was obtained from a pentacene field effect transistor in the saturation regime and no hysteresis behavior was observed in transfer curves.

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Pentacene TFTs with Photoaligned Gate Insulator Surface

  • Lee, Jong-Hyuk;Kang, Chang-Heon;Choi, Jong-Sun;Song, Dong-Mee;Shin, Dong-Myung;Lee, Sin-Doo
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.575-578
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    • 2002
  • In this work, the electrical characteristics of organic thin film transistors with the surface-treated organic gate insulator have been studied. For the surface treatment, the photoalignment technique was used. The field effect mobilities of the devices with PVP gate insulator was improved about ten times as high as those of TFTs without the insulator surface treatment.

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A Study on the Electrical Characteristics of Organic Thin Film Transistor using Photoacryl as Gate Dielectric Layer (Photoacryl을 게이트 절연층으로 사용한 유기 박막트랜지스터의 전기적 특성에 관한 연구)

  • 김윤명;표상우;김준호;신재훈;김영관;김정수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.2
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    • pp.110-118
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    • 2002
  • Organic thin film transitors(OTFT) are of interest for use in broad area electronic applications. And recently organic electroluminescent devices(OELD) have been intensively investigated for using in full-color flat-panel display. We have fabricated inverted-staggered structure OTFTs at lower temperature using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active eletronic material and photoacryl as the organic gate insulator. The field effect mobility is 0.039∼0.17 ㎠/Vs, on-off current ratio is 10$\^$6/, and threshold voltage is -7V. And here we report the study of driving emitting, Ir(ppy)$_3$, phosphorescent OELD with all organic thin film transistor and investigated its electrical characteristics. The OELD with a structure of ITO/TPD/8% Ir(ooy)$_3$ doped in BCP/BCP/Alq$_3$/Li:Al/Al and OTFT with a structure of inverted-stagged Al(gate electrode)/photoacry(gate insulator)/pentacene(p-type organic semiconductor)/ Au(source-drain electrode) were fabricated on the ITP patterned glass substrate. The electrical characteristics are turn-on voltage of -10V, and maximum luminance of about 90 cd/㎡. Device characteristics were quite different with that of only OELD.

A Study on the Electrical Characteristics of Pentacene Organic Thin Film Transistor using Organic Gate Insulator (유기물 게이트 절연체를 사용한 pentacene 유기 박막 트랜지스터의 전기적 특성에 관한 연구)

  • Kim, Yun-Myoung;Kim, Ok-Byoung;Kim, Jung-Soo;Kim, Young-Kwan;Zyung, Tae-Hyung
    • Proceedings of the KIEE Conference
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    • pp.446-448
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    • 2000
  • Organic semiconductors based on vacuum-deposited films of fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, pentacene thin films and electrode materials were deposited by Organic Molecular Beam Deposition (OMBD) and vacuum evaporation respectively. For the gate dielectric layer, OPTMER PC403 photo acryl (JSR Coporation.) was spin-coated and cured at $220^{\circ}C$. Electrical characteristics of the devices were investigated, where the channel length and width was $50{\mu}m$ and 5 mm. It was found that field effect mobility was $0.039\;cm^2V^{-1}s^{-1}$, threshold voltage was -7 V, and on/off current ratio was $10^6$.

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The effect of 3-mercapto-5-nitro-benzimidazole (MNB) and poly (methyl methacrylate) (PMMA) treatment sequence organic thin film transistor

  • Park, Jin-Seong;Suh, Min-Chul;Jeong, Jong-Han;Kim, Su-Young;Mo, Yeon-Gon
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1174-1177
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    • 2006
  • A bottom contact organic thin film transistor (OTFT) is fabricated with an organic double-layered gate insulator (GI) and pentacene. The PMMA and MNB layers are treated on gate insulator and source/drain (S/D, Au) before depositing pentacene to investigate device properties and pentacene growth. The sequence of surface treatment affects a device performance seriously. The ultra-thin PMMA (below 50A) was deposited on organic gate insulator and S/D metal by spin coating method, which showed no deterioration of on-state current (Ion) although bottom contact structure was exploited. We proposed that the reason of no contact resistance (Rc) increase may be due to a wettability difference in between PMMA / Au and PMMA / organic GI. As a result, the device treated by $PMMA\;{\rightarrow}\;MNB$ showed much better Ion behavior than those fabricated by $MNB\;{\rightarrow}\;PMMA$. We will report the important physical and electrical performance difference associated with surface treatment sequence.

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Passivation Layers for Organic Thin-film-transistors

  • Lee, Ho-Nyeon;Lee, Young-Gu;Ko, Ik-Hwan;Kang, Sung-Kee;Lee, Seong-Eui;Oh, Tae-Sik
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.1
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    • pp.36-40
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    • 2007
  • Inorganic layers, such as SiOxNy and SiOx deposited using plasma sublimation method, were tested as passivation layer for organic thin-film-transistors (OTFTs). OTFTs with bottom-gate and bottom-contact structure were fabricated using pentacene as organic semiconductor and an organic gate insulator. SiOxNy layer gave little change in characteristics of OTFTs, but SiOx layer degraded the performance of OTFTs severely. Inferior barrier properties related to its lower film density, higher water vapor transmission rate (WVTR) and damage due to process environment of oxygen of SiOx film could explain these results. Polyurea and polyvinyl acetates (PVA) were tested as organic passivation layers also. PVA showed good properties as a buffer layer to reduce the damage come from the vacuum deposition process of upper passivation layers. From these results, a multilayer structure with upper SiOxNy film and lower PVA film is expected to be a superior passivation layer for OTFTs.

Study on the Organic Gate Insulators Using VDP Method (VDP(Vapor Deposition Polymerization) 방법을 이용한 유기 게이트 절연막의 대한 연구)

  • Pyo, Sang-Woo;Shim, Jae-Hoon;Kim, Jung-Soo;Kim, Young-Kwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.185-190
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    • 2003
  • In this paper, it was demonstrated that the organic thin film transistors were fabricated by the organic gate insulators with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA) and ODA, and cured at $150^{\circ}C$ for 1hr. Electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure obtained to the saturated slop in the saturation region and the subthreshold non-linearity in the triode region. Field effect mobility, threshold voltage, and on-off current ratio in $0.45\;{\mu}m$ thick gate dielectric layer were about $0.17\;cm^2/Vs$, -7 V, and $10^6\;A/A$, respectively. Details on the explanation of compared to organic thin-film transistors (OTFTS) electrical characteristics of ODPA-ODA and 6FDA-ODA as gate insulators by fabricated thermal co-deposition method.

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A Study on the Electrical Characteristics of Organic Thin Film Transistor, OTFT With Plasma-Treated Gate Insulators (Plasma 처리한 유기 절연층을 갖는 유기 박막 트랜지스터의 전기적 특성 연구)

  • 김연주;박재훈;강성인;최종선
    • Journal of the Korean Vacuum Society
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    • v.13 no.3
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    • pp.99-102
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    • 2004
  • In this work the electrical characteristics of organic thin film transistors with the surface-treated organic gate insulator have been studied. For the surface treatment of gate dielectric, Ar plasma was used. Pentacene and PVP were used as active and dielectric layers respectively. Pentacene was thermally evaporated in vacuum at a pressure of about $10^{-6}$ Torr and at a deposition rate of 0.5 $\AA$/sec. PVP was spin coated and cured at $100^{\circ}C$. before pentacene deposition. organic thin film transistors with surface-treated gate insulators have provided improved operation characteristics.