• Title/Summary/Keyword: PE-CVD

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A comparative study of physical properties of $TiO_2$ thin films according to a coating method on orthodontic wires and brackets (교정용 와이어 및 브라켓에 이산화티탄 광촉매 코팅 시 코팅방법에 따른 비교연구)

  • Koh, Eun-Hee;Cho, Jin-Hyoung
    • The korean journal of orthodontics
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    • v.36 no.6
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    • pp.451-464
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    • 2006
  • The purpose of this study was to search for an appropriate method of coating $TiO_2$ on orthodontic appliances. $TiO_2$ thin films were deposited on orthodontic wires and brackets using sol-gel, CVD (Chemical Vapor Deposition) and PE-CVD (Plasma Enhanced-CVD) methods. The roughness of $TiO_2$-coated surfaces was investigated via scanning electron microscope (SEM) and adhesive strength of $TiO_2$ thin films was measured by adhesive tape pull test. Methylene blue degradation test was carried out to evaluate the photocatalytic activity of $TiO_2$ and the corrosion resistance of $TiO_2$ thin films against fluoride solution was also analyzed by observing the surfaces of $TiO_2$-coated wires and brackets via SEM after immersion in sodium fluoride solution. Through the comparison of properties and photocatalytic activity of $TiO_2$ thin films according to the coating methods, the following results were obtained. Smoother surfaces of $TiO_2$ thin films were generated by CVD or PE-CVD methods than through the sol-gel method or the control. Adhesive strength of the $TiO_2$ thin films was highest in PE-CVD and gradually became lower in the order of CVD, then the sol-gel method. Photocatalytic activity of $TiO_2$ thin films on methylene blue was the highest in PE-CVD and gradually became lower in the order of CVD, then the sol-gel method. Corrosion resistance of $TiO_2$ thin films against fluoride solution was stronger in CVD and PE-CVD methods than in the sol-gel method. The results of this study suggest that the CVD or PE-CVD methods is more appropriate than the sol-gel method for $TiO_2$ coating on orthodontic wires and brackets.

Showerhead Surface Temperature Monitoring Method of PE-CVD Equipment (PE-CVD 장비의 샤워헤드 표면 온도 모니터링 방법)

  • Wang, Hyun-Chul;Seo, Hwa-Il
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.2
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    • pp.16-21
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    • 2020
  • How accurately reproducible energy is delivered to the wafer in the process of making thin films using PE-CVD (Plasma enhanced chemical vapor deposition) during the semiconductor process. This is the most important technique, and most of the reaction on the wafer surface is made by thermal energy. In this study, we studied the method of monitoring the change of thermal energy transferred to the wafer surface by monitoring the temperature change according to the change of the thin film formed on the showerhead facing the wafer. Through this research, we could confirm the monitoring of wafer thin-film which is changed due to abnormal operation and accumulation of equipment, and we can expect improvement of semiconductor quality and yield through process reproducibility and equipment status by real-time monitoring of problem of deposition process equipment performance.

A Study on Improvement of Heater Rod Adhesion in Semiconductor Equipment (반도체 장비 히터로드 유착 개선에 관한 연구)

  • Wang, Hyun-Chul;Seo, Hwa-Il
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.1
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    • pp.67-72
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    • 2020
  • This study analyzes the method of adhesion and improvement between heat.er and RF filter in PE-CVD equipment through TRIZ method and proposes a solution. TRIZ Solution such as function analysis, 9-window matrix, ASIT, and Root cause analysis were used. The contact temperature between the heater and the RF filter was 20% and the surface temperature was lowered to 5.7℃, suggesting an improvement method for the thermal expansion of the PE-CVD equipment hot zone.

Microstructure Analysis of Carbon Nanotubes Grown by Plasma Enhanced Chemical Vapor Deposition (플라즈마 화학기상증착법으로 성장시킨 탄소나노튜브의 미세구조 분석)

  • Yoon Jongsung;Yun Jondo;Park Jongbong;Park Kyeongsu
    • Korean Journal of Materials Research
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    • v.15 no.4
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    • pp.246-251
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    • 2005
  • Plasma enhanced chemical vapor deposition(PE-CVD) method has an advantage in synthesizing carbon nanotubes(CNTs) at lower temperature compared with thermal enhanced chemical vapor deposition(TE-CVD) method. In this study, CNTs was prepared by using PE-CVD method. The growth rate of CNT was faster more than 100 times on using Invar alloy than iron as catalyst. It was found that chrome silicide was formed at the interface between chrome layer and silicon substrate which should be considered in designing process. Nanoparticles of Invar catalyst were found oxidized on their surfaces with a depth of 10 m. Microstructure was analyzed by scanning electron microscopy, transmission electron microscopy, scanning transmission electron microscopy, and energy dispersive x-ray spectrometry. Based on the result of analysis, growth mechanism at an initial stage was suggested.

Mechanical Property Evaluation of Diamond-like Carbon Coated by PE-CVD (PE-CVD방법을 이용한 DLC 박막의 기계적특성 평가)

  • Kang Seog Ju;Yi Jin-Woo;Kim Seock Sam
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2003.11a
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    • pp.368-376
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    • 2003
  • In this research, DLC thin films are produced as several hundred nm thickness by PE-CVD method. And then these thin films are estimated tribological characteristics to find out useful possibilities as a protecting film for high-quality function and life extension at MEMs by mechanical properties observation . These are measured thickness and residual stress of DLC coating. Compared after measuring friction coefficient, adhesion force, hardness, cohesive force of coating films. As results all test, we can decide several conclusions. First, friction coefficient decreased, as the load increased. otherwise, friction coefficient increased, as thickness of coating film increased under low load$(1\~50mN)$. Secod, adhesion force increased as thickness of coating films. Third, hardness of coating film is affected by substrate coating film when it is less than thickness of 300nm and it has general hardness of DLC coating film when it is more than thickness of 500nm. Fourth, cohesive force of coating film is complexly affected by hardness, adhesion force, residual stress, etc.

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Graphene Synthesized by Plasma Enhanced Chemical Vapor Deposition at Low-Temperature

  • Ma, Yifei;Kim, Dae-Kyoung;Xin, Guoqing;Chae, Hee-Yeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.248-248
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    • 2012
  • Synthesis graphene on Cu substrate by plasma-enhanced chemical vapor deposition (PE-CVD) is investigated and its quality's affection factors are discussed in this work. Compared with the graphene synthesized at high temperature in chemical vapor deposition (CVD), the low-temperature graphene film by PE-CVD has relatively low quality with many defects. However, the advantage of low-temperature is also obvious that low melting point materials will be available to synthesize graphene as substrate. In this study, the temperature will be kept constant in $400^{\circ}C$ and the graphene was grown in plasma environment with changing the plasma power, the flow rate of precursors, and the distance between plasma generator coil and substrates. Then, we investigate the effect of temperature and the influence of process variables to graphene film's quality and characterize the film properties with Raman spectroscopy and sheet resistance and optical emission spectroscopy.

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RF Loss Minimization Method Using High Impedance Filter for Research (High Impedance Filter를 이용한 RF Loss 최소화 방법에 대한 연구)

  • Wang, Hyun-Chul;Seo, Hwa-Il
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.1
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    • pp.55-60
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    • 2020
  • This study designed High impedance filter to reduce RF loss to heater heating wire and increase RF current flowing to heater ground wire. Effects such as D / R improvement and process reproducibility could be seen. In addition, RF parameter distribution optimization was possible by understanding the RF path of PE-CVD equipment using Plasma and designing filter.

Flowable Oxide를 이용한 저온 Flexible OLED 박막봉지 제작

  • Yong, Sang-Hyeon;Kim, Dae-Gyeong;Kim, Hun-Bae;Jo, Seong-Min;Chae, Hui-Yeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.249-249
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    • 2012
  • 최근 주목받고 있는 Flexible Organic Light Emitting Diode (OLED) display에서는 Flexible 특성이 요구된다. 이는 현재 쓰이는 유리기판 대신 플라스틱기판으로 만들어야 가능하다. 하지만 플라스틱기판은 구성물질로 유기물을 사용하므로 수분과 산소의 투과에 매우 취약하다. 이는 장시간 사용 시 기판 위에 제작된 소자성능저하를 야기하는 등의 소자 신뢰도에 치명적 결함을 갖게 하는 원인이 된다. 따라서 기판 위의 소자를 보호할 수 있는 봉지기술 개발이 필요한데 가장 잘 알려진 플라스틱 기판에 적합한 Barrier기술로 유기물과 무기물을 교대로 적층하는 기술[1] 등이 있다. 본 연구에서는 PE-CVD 공정기술을 이용한 Flowable Oxide 박막과 ALD 공정기술을 이용한 Al2O3 무기물 박막을 적층하여 봉지박막을 구성하려 한다. Flowable Oxide는 저온공정이 가능하며 높은 증착속도와 뛰어난 Gap fill 특성을 가지고 있는데 이는 플라스틱기판의 엉성한 분자구조를 치밀하게 만들 것으로 예상되며 표면의 Pin-hole 또한 쉽게 채우는 특성이 있다. 실험은 Polyethylene Naphthalate (PEN) film 위에 PE-CVD 공정을 이용하여 Flowable Oxide를 증착하고, 그 후에 ALD 공정을 이용하여 Al2O3을 적층한 것을 하나의 샘플로 하였다. 샘플의 분석은 Ca test를 이용한 Water Vapor Transmission rate(WVTR)과 FT-IR, FE-SEM을 이용하여 분석하였다. FT-IR로 박막의 구성요소를 확인 하고 FE-SEM으로 박막의 Cross section image를 얻을 수 있었으며 또한 $4.85{\times}10^{-5}g/m^2$ day의 초기 WVTR 값을 얻을 수 있었다.

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