• Title/Summary/Keyword: RF-magnetron sputtering

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The effect of electrical properties by gas ratio on $Bi_{3.25}La_{0.75}Ti_3O_{12}$ thin films deposited by RF magnetron sputtering during being annealed (RF magnetron sputtering으로 제작한 BLT 박막의 후열처리 시 가스비 변화에 따른 전기적 특성에 관한 연구)

  • Lee, Kyu-Il;Kim, Eung-Kwon;Kang, Hyun-Il;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.49-52
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    • 2003
  • The role of gas ratio with the crystallization behavior and electrical properties in $Bi_{3.25}La_{0.75}Ti_3O_{12}$(BLT) thin films by rf magnetron sputtering method has not been precisely defined. In this work, the ferroelectric properties of these films with gas variation was investigated. BLT thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method and then they were crystallized by rapid thermal annealing (RTA). The experiment showed that all BLT films indicated perovskite polycrystalline structure with preferred orientation (020) and (0012). And no pyrochlore phase was observed. The fabricated film annealed with $O_2$ of 15 sccm showed that value of leakage current was $9.67{\times}10^{-7}A/cm^2$ at 50kV /em, and the value of remanent polarization (2Pr=Pr+-Pr-) was $11.8{\mu}C/cm^2$. Therefore we induce access to memory device application by rf-magnetron sputtering method in this report.

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Properties of ZnO:Al Thin Films Deposited by RF Magnetron Sputtering with Various Base Pressure (RF Magnetron Sputtering법으로 제작한 ZnO:Al 박막의 초기 압력에 따른 특성)

  • Kim, D.K.;Kim, H.B.
    • Journal of the Korean Vacuum Society
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    • v.20 no.2
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    • pp.141-145
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    • 2011
  • ZnO:Al thin films were deposited by RF magnetron sputtering with various base pressure, and their structural, optical, and electrical properties were studied. The influence of the base pressure on the ZnO:Al thin film was confirmed and a high-quality thin film was obtained by controlling the base pressure. In all Al-doped ZnO thin films, the preferred orientation of (002) plane was observed and light transmittance in visible region (400 nm~800 nm) had above 85%. With decreasing of base pressure, crystallinity, resistivity, and figure of merit were improved. The improvement of resistivity with base pressure was attributed to the change of grain size.

RF magnetron sputtering 및 Evaporation으로 증착된 CdTe박막의 물성비교

  • Kim, Min-Je;Jo, Sang-Hyeon;Song, Pung-Geun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • pp.172-173
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    • 2012
  • 최근 의료산업에서는 동영상 구현이 가능한 직접 방식의 X-선 검측센서에서 X-ray 흡수효율이 좋은 반도체센서와 성숙된 기술. 본 연구에서는 non-alkali 기판에 evaporation 및 RF magnetron sputtering법으로 기판온도를 증가시키며 CdTe막을 증착하였다. 또한, RF magnetron sputtering을 이용하여 상온에서 증착한 CdTe막을 진공 및 대기 중에서 후열처리한 후 미세구조 변화를 관찰하였다.

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Fabrication of yttrium oxide thin film on ITO by RF magnetron sputtering for TTFT (RF magnetron sputtering법으로 ITO 위에 증착한 yttrium oxide의 특성)

  • Bang, Jun-Ho;Jeong, Je-Heon;Song, Pung-Geun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • pp.183-183
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    • 2011
  • TTFT(Transparent TFT)의 유전체로 사용되는 절연층으로 사용이 기대되는 yttrium oxide를 ITO 위에 RF magnetron sputtering법으로 상온 증착하고 구조적 특성을 분석하고 조성 및 표면 상태를 확인하였으며 유전 특성을 분석하였다.

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ZnO film growth on sapphire substrate by RF magnetron sputtering (RF 스퍼터링 법에 의한 사파이어 기판상의 ZnO 박막의 성장)

  • Kang Seung Min
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.5
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    • pp.215-219
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    • 2004
  • ZnO epitaxial films have been grown on a (0001)sapphire substrate by RF magnetron sputtering. The single crystalline ZnO films were grown at the condition of growth rate of about 0.1~0.2 $\mu\textrm{m}$/hr and the substrate temperature of $600^{\circ}C$. The film thickness was about 400~500 nm. The thin film quality and micro-structure have been evaluated by XRD and TEM observation.

The Structure, Optical and Electrical Characteristics of AZO Thin Film Deposited on PET Substrate by RF Magnetron Sputtering Method (PET 기판 위에 RF magnetron sputtering으로 증착한 AZO 박막의 구조적, 광학적, 전기적 특성)

  • Lee, Yun seung;Kim, Hong bae
    • Journal of the Semiconductor & Display Technology
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    • v.15 no.4
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    • pp.36-40
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    • 2016
  • The 2 wt.% Al-doped ZnO(AZO) thin films were fabricated on PET substrates with various RF power 20, 35, 50, 65, and 80W by using RF magnetron sputtering in order to investigate the structure, electrical and optical properties of AZO thin films in this study. The XRD measurements showed that AZO films exhibit c-axis orientation. At a RF power of 80W, the AZO films showed the highest (002) diffraction peak with a FWHM of 0.42. At a RF power of 65W, the lowest electrical resistivity was about $1.64{\times}[10]$ ^(-4) ${\Omega}-cm$ and the average transmittance of all films including substrates was over 80% in visible range. Good transparence and conducting properties were obtained due to RF power control. The obtained results indicate that it is acceptable for applications as transparent conductive electrodes.

The Structures, Optical and Electrical Properties of IGZO Thin Films by RF Magnetron Sputtering According to RF Power (RF magnetron sputtering으로 증착한 IGZO 박막의 RF power에 따른 구조적, 광학적 및 전기적 특성 연구)

  • Yeon, Je ho;Kim, Hong Bae
    • Journal of the Semiconductor & Display Technology
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    • v.15 no.3
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    • pp.57-61
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    • 2016
  • We have studied the structural, optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the silicon wafer by RF magnetron sputtering method. The RF power in sputtering process was varied as 15W, 30W, 45W, 60W, 75W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The Hall measurements in the low RF power is the high mobility above $10cm^2/V{\cdot}s$ and the low resistvity are obtained in the IGZO thin films.

The properties of copper films deposited by RF magnetron sputtering (RF 마그네트론 스퍼터링법에 의해 증착된 구리막의 특성)

  • 송재성;오영우
    • Electrical & Electronic Materials
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    • v.9 no.7
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    • pp.727-732
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    • 1996
  • In the present paper, the Cu films 4.mu.m thick were deposited by RF magnetron sputtering method on Si wafer. The Cu films deposited at a condition of 100W, 10mtorr exhibited a low electrical resistivity of 2.3.mu..ohm..cm and densed microstructure, poor adhesion. The Cu films grown by 200W, 20mtorr showed a good adhesion property and higher electrical resistivity of 7.mu..ohm..cm because of porous columnar microstructure. Therefore, The Cu films were deposited by double layer deposition method using RF magnetron sputtering on Si wafer. The dependence of the electrical resistivity, adhesion, and reflectance in the CU films [C $U_{4-d}$(low resistivity) / C $U_{d}$(high adhesion) / Si-wafer] on the thickness of d has been investigated. The films formed with this deposition methods had the low electrical resistivity of about 2.6.mu..ohm..cm and high adhesion of about 700g/cm.m.m.

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Charaterization of GaN Films Grown on Si(100) by RF Magnetron Sputtering (RF magnetron sputtering 방법에 의해 Si(100) 기판 위에 성장된 GaN 박막의 특성에 대한 연구)

  • 이용일;성웅제;박천일;최우범;성만영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.570-573
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    • 2001
  • In this paper, GaN films have been grown on SiO$_2$/Si(100) substrates by RF magnetron sputtering. To obtain high quality GaN films, we used ZnO buffer layer and modified the process conditions. The charateristics of GaN films on RF power, substrate temperature and Ar/N$_2$gas ratio have been investigated by Auger electron spectroscopy and X-ray diffraction analysis. At RF power 150W, substrate temperature 500 $^{\circ}C$ and Ar/N$_2$=1:2 gas ratio, we could grow high quality GaN films. Through the atomic force microscope and photoluminescence analysises, it was observed that the crystallization of GaN films was improved with increasing annealing temperature and the optimal crystallization of GaN films was found at 1100 $^{\circ}C$ annealing temperature.

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