• Title/Summary/Keyword: Reactive sputtering method

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Electrical Characteristic of AI/AIN/GaAs MIS capacitor Fabricated by Reactive Sputtering Method for the (NH4)2S Treatment (반응성 스퍼터링법으로 AI/AIN/GaAs 커패시터 제조시 (NH4)2S 처리에 따른 전기적 특성)

  • Chu, Soon-Nam;Kwon, Jung-Youl;Park, Jung-Cheul;Lee, Heon-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.1
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    • pp.8-13
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    • 2007
  • In MIS capacitor structure, we have studied the electrical properties in Ammonium Sulfide solution treatment while AIN thin film as a insulator is being formed by reactive sputtering method. The deposition process conditions of AIN thin film we temperature $250^{\circ}C$, DC Power 150 W, pressure 5 mTorr and 8 sccm(Ar : 4 sccm, $N_{2}$ : 4 sccm). The surface of GaAs was treated with Ammonium Sulfide solution, it was shown the leakage current was less than $10^{-8}\;A/cm^{2}$. The deep depletion phenomena of inverse area with treating Ammonium Sulfide solution in C-V analysis was improved as compared the condition of without Ammonium Sulfide solution and hysteresis property as well.

TCO Workfunction Engineering with Oxygen Reactive Sputtering Method for Silicon Heterojunction Sola Cell Application

  • Bong, Seong-Jae;Kim, Seon-Bo;An, Si-Hyeon;Park, Hyeong-Sik;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.492-492
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    • 2014
  • On account of the good conductivity and optical properties, TCO is generally used in silicon heterojunction solar cell since the emitter material, hydrogenated amorphous silicon (a-Si:H), of the solar cell has low conductivity compare to the emitter of crystalline silicon solar cell. However, the work function mismatch between TCO layer and emitter leads to band-offset and interfere the injection of photo-generated carriers. In this study, work function engineering of TCO by oxygen reactive sputtering method was carried out to identify the trend of band-offset change. The open circuit voltage and short circuit current are noticeably changed by work function that effected from variation of oxygen ratio.

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Properties Electric of AIN Thin Film on the Si and GaAs Substrate (Si와 GaAs기판 위에 AIN 박막의 전기적 특성)

  • Park, Jung-Cheul;Chu, Soon-Nam;Kwon, Jung-Youl;Lee, Heon-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.1
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    • pp.5-11
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    • 2008
  • To study the effects of $H_2$ gas on AIN insulation thin film, we prepared AIN thin film on Si and GaAs substrate by means of reactive sputtering method using $H_2$ gas as an additives, With treatment conditions of $H_2$ gas AIN thin film shows variable electrical properties such as its crystallization and hysterisis affected to electrical property, As a results, AIN thin film fabricated on Si substrate post-treated with $H_2$ gas for 20 minutes shows much better an insulation property than that of pre-treated, And AIN film treated with $H_2$ gas comparing to non-treated AIN film shows a flat band voltage decreasment. But In GaAs substrate $H_2$ gas does not effect on the flat band voltage.

Electrical Characteristic of Al/AIN/GaAs MIS Capacitor fabricated by Reactive Sputtering Method for the DC power (반응성 스퍼터링법으로 Al/AIN/GaAs MIS 커패시터 제조시 DC 전력에 따른 전기적 특성)

  • 권정열;이헌용;김지균;김병호;김유경
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.566-569
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    • 2001
  • In this paper, we investigated the electrical characteristics through DC power at manufacturing the MIS capacitor insulator AIN thin film based on reactive sputtering method. In case of deposition temperature 250$^{\circ}C$, pressure 5mTorr, total flow rate 8sccm(Ar:4sccm N2:4sccm), AIN thin film was deposited with changing DC power. As DC power increses, resistivity is observed a little increase. When AIN thin film is deposited at 100W, the result shows leakage current 10$\^$-8/A/$\textrm{cm}^2$ at 0.1MV/cm. Otherwise, In case of depositing at 150W and 200W, the result shows that the characteristic of leakage current is under 10$\^$-9//$\textrm{cm}^2$ at 0.1MV/cm. In C-V characteristic with DC power, deep depletion phenomenon is observed at inversion region in 100W and 150W. In 200W, that phenomenon, however, was showed to decrease. It shows that the hysterisis increases with being increasing DC power.

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Characteristics of tungsten nitride films deposited by reactive sputtering method (Reactive sputtering 방법으로 증착된 W nitride 박막의 특성)

  • 이연승;이원준;나사균;이윤직;임관용;황정남
    • Journal of the Korean Vacuum Society
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    • v.11 no.1
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    • pp.22-27
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    • 2002
  • We investigated the crystal structure, resistivity, and chemical states change of the tungsten nitride $(WN_x)$ films prepared by reactive sputtering method with various $N_2$ flow ratios. Crystal structures of $WN_x$ films deposited at the $N_2$ flow ratios of 20%, 40%, and 60% were bcc $\beta$-W, amorphous, and fcc $W_2$N, respectively. Surface roughness of $WN_x$ film was smallest when the $WN_x$ film is amorphous. After the air exposure of $WN_x$ films, $WO_3$ layer was formed at the surface of all samples. Both the nitrogen content of $WN_x$ film and the binding energy of W $4f_{7/2}$ peaks increased with increasing $N_2$ flow ratio. However, after $Ar^+$ ion etching, the shift of W $4f_{7/2}$ peaks was not observed with $N_2$ flow ratio due to the amorphization of the $WN_x$ film surface. The resistivity of $WN_x$ films increased with increasing $N_2$ flow ratio.

Effects of hydrogen gas addition on insulator thin film of Al/AlN/GaAs MIS system fabricated by sputtering method (스퍼터링법으로 저작한 Al/AlN/GaAs MIS 구조에서 절연박막에 수소가스첨가가 미치는 영향)

  • Kwon, Jung-Youl;Kim, Min-Suk;Kim, Jee-Gyun;Lee, Hwan-Chul;Lee, Heon-Yong
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1925-1927
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    • 1999
  • At the study, it has fabricated Al/AlN/GaAs MIS capacitor using DC reactive sputtering method. To applicate GaAs semiconductor in a MIS devices, investigated capability of AIN thin film by the insulator layer. Also it has investigated inversion of C-V characteristics by addition of the hydrogen(hydrogen concentration: 5%) and it has investigated that leakage current has $10^{-8}A/cm^2$ for 1 MV/cm breakdown electric field of I-V characteristics.

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Effects of Ta Doping in Sputter-deposited PZT Thin Films (스퍼터링에 의해 제도된 PZT 박막에 있어서 Ta 첨가 효과)

  • 길덕신;주재현;주승기
    • Journal of the Korean Ceramic Society
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    • v.31 no.8
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    • pp.920-926
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    • 1994
  • Ta doped PZT thin films were prepared by a reactive sputtering method with a 3-gun magnetron co-sputter, and effects of Ta doping on physical and electrical properties of the films were studied. Within the doping range of 0 to 3.6 at%, Ta doping enhanced the crystallographic orientation of (110), but reduced that of (100). Ta doped PZT had a larger grain size of about 20 ${\mu}{\textrm}{m}$ compared with that of 5 ${\mu}{\textrm}{m}$ for un-doped PZT. Pits and holes of PZT films which used to appear with annealing at high temperature due to evaporation of PbO were much suppressed with addition of Ta. The leakage current could be reduced down to 1.27$\times$10-8 A/$\textrm{cm}^2$ and the charge storge density as large as 25.8$\mu$C/$\textrm{cm}^2$ was obtained.

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Electro-Chemical Properties of Iridium Oxide Coated Ti Electrode Synthesized by Unbalanced Magnetron Sputtering Process (비대칭 마크네트론 스퍼터링을 이용한 이리듐 산화물 박막의 합성과 전기 화학적 특성분석)

  • Kim, Sung-Dae;Kim, Sang-Sik;Song, Jin-Ho
    • Journal of the Korean institute of surface engineering
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    • v.40 no.5
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    • pp.203-208
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    • 2007
  • Preliminary studies were conducted to develop a dimensionally stable anode (DSA)electrode prepared by reactive sputtering method. The microstructure, surface morphology and electrochemical properties of iridium oxide $(IrO_2)$ coatings synthesized by unbalanced magnetron sputtering (UBMS) and conventional DSA electrode were compared. In addition, the possibilities of $IrO_2$ films synthesized by UMB on a real DSA electrode were investigated by electro-chemical application test. The degree of non-stoichiometry and surface area were closely related to the electro-chemical activity of the $IrO_2$ electrode. The feasibility of making a DSA electrode prepared by PVD technique was demonstrated through the present work.

A study on thermal behavior of Diamond-like carbon film (Diamond-like carbon film의 열적거동에 관한 연구)

  • Cho, kwang-Rae;Noh, Jeong-Yeon;So, Myoung-Gi
    • Journal of Industrial Technology
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    • v.32 no.A
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    • pp.119-123
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    • 2012
  • Diamond-like carbon(DLC) thin films with interlayer were deposited on silicon substrate using a reactive sputtering method. The thermal stability of the films was investigated by annealing the films for 1hr in air in the range of 100 to $500^{\circ}C$. The $I_D/I_G$ ratio increased with increasing temperature as related to the $sp^3-to-sp^2$transition. Accordingly, G-position shifting started from $150^{\circ}C$ in the DLC films and from $270^{\circ}C$ in the a-Si/DLC films. Moreover, in the case of the a-Si/DLC films the film still observed even after annealing at $500^{\circ}C$. The thermal stability of the reactive sputtered DLC films appeared to be improved by the a-Si interlayer.

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