• Title/Summary/Keyword: Substrate temperature

Search Result 1,273, Processing Time 0.514 seconds

Influence of Substrate Temperature of KLN Thin Film Deposited on Amorphoous Substrate (비정질 기판위에 증착한 KLN 박막의 기판온도에 의한 영향)

  • 박성근;최병진;홍영호;전병억;김진수;백민수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.14 no.1
    • /
    • pp.34-42
    • /
    • 2001
  • The influences of substrate temperature were studied when fabricating KLN thin film on amorphous substrate using an rf-magnetron sputtering method. Investigating the vaporization temperature of the each element, the excess ratio of target and the optimum deposition conditions were effectively selected when thin filmizing a material which have elements with large difference fo vaporization temperature. In order to compensate K and Li which have lower vaporization temperatures than Nb, KLN target of composition excess with K of 60% and Li of 30% was used. KLN thin film fabricated on Corning 1737 glass substrate had single KLN phase above 58$0^{\circ}C$ of substrate temperature and crystallized to c-axis direction. The optimum conditions were rf power of 100W, process pressure of 150mTorr, and substrate temperature of $600^{\circ}C$.

  • PDF

Deposition of Carbon Thin Film using Laser Ablation and Its Field Emission Properties (레이저 증착법에 의한 탄소계 박막의 구조 및 전계방출특성)

  • ;Kenjiro Oura
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.15 no.7
    • /
    • pp.634-639
    • /
    • 2002
  • Using laser ablation technique carbon thin films were deposited on Si(100) substrate as a function of substrate temperature. In this study, the surface morphologic, structural and field emission properties of these carbon thin films were investigated using Raman spectroscopy, scanning electron microscopy, and a diode technique, respectively. With increasing of the substrate temperature, the surface morphologies were changed significantly. Moreover, the intensity of D-band and the full width at half maximum of these bands were dependent on substrate temperatures. As the substrate temperature was increased, the field emission properties were improved. As the result, we find that the field emission properties of the films were changed significantly with the substrate temperature and structural features of carbon than films.

Collision Behavior of Molten Metal Droplet by Laser Beam (레이저 빔에 의해 생성된 금속액적의 충돌거동)

  • 김용욱;양영수
    • Laser Solutions
    • /
    • v.6 no.1
    • /
    • pp.1-8
    • /
    • 2003
  • A molten metal droplets are deposited onto solid substrate for solid freeform fabrication, Collision dynamic and substrate heat transfer associated with solidification determine the final shape of molten metal droplets. In this study, the experimental model, based on the variational condition with substrate temperature and falling height, was produced reliable optimal data of droplet pattern.

  • PDF

The Effect of the substrate temperature on the properties of GZOB films by DC magnetron sputtering (DC 마그네트론 스퍼터링법으로 증착한 GZOB 박막의 기판온도에 따른 특성)

  • Lee, Jong-Hwan;Yu, Hyun-Kyu;Lee, Kyung-Chun;Hur, Won-Young;Lee, Tae-Yong;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • /
    • pp.106-107
    • /
    • 2009
  • In this study, We investigated the effects of substrate temperature on the electrical and optical properties of Ga-, B-codoped ZnO(GZOB) thin films. GZOB thin films were deposited on glass substrate with various substrate temperature in the range from R.T. to $500\;^{\circ}C$ by DC magnetron sputtering. In the reslt, GZOB films at $400\;^{\circ}C$ exhibited a low resistivity value of $8.67\;{\times}\;10^{-4}\;{\Omega}-cm$, and a visible transmission of 80% with a thickness of 300 nm. This result indicated that the addition of Ga and B in ZnO films leads to the improvement of conductivity and transparent. From the result, we can confirm the possibility of the application as transparent conductive electrodes.

  • PDF

Self-Organized Nano Structure in Co-22% Cr Alloy Thin Films with Substrate Temperatures (기판온도에 따른 Co-22%Cr 합금박막의자가정렬형 나노구조)

  • 송오성;이영민
    • Journal of the Korean institute of surface engineering
    • /
    • v.34 no.6
    • /
    • pp.531-536
    • /
    • 2001
  • Co-22 %Cr alloy films are promising for high-density perpendicular magnetic recording media with their perpendicular anisotropy and large coercivity of 3000 Oe. We observed that a self organized nano structure (SONS) of fine ferromagnetic Co-enriched phase and paramagnetic Cr-enriched phase appears inside the grain of Co-Cr magnetic alloy thin films at the elevated substrate temperature after do-sputtering. The periodic fine Co-enriched phase and Cr-enriched phase is the plate shape of 80 (equation omitted)-wide and 1000 (equation omitted)-long. Cr-enriched phases are located at the center of grains. We prepared 5000 (equation omitted) -thick Co-22 %Cr films on polyimide substrate with varying substrate temperature of $ 30^{\circ}C$, $ 150^{\circ}C$ ,200 $^{\circ}C$, $300^{\circ}C$, and $400^{\circ}C$, respectively. A transmission electron microscope equipped with energy dispersive X-ray analyzer is employed to observe the microstructure of each samples after Co-enri-ched phase are etched selectively. The self organized nano structure of Co-enriched and Cr-enriched lamellar is observed above the substrate temperture of $150^{\circ}C$. No compositional change is observed with substrate temperature. The compositional phase separation in self organized structure becomes clear as the substrate temperature increases. Our results implies that the self organized nano structure in Co-22 %Cr film is ideal for ultra high density recording media by recording selectively on Co-enri-ohed phase.

  • PDF

The Structural and Electrical Properties of CdSe Films Deposited at Low Temperature (저온에서 증착한 CdSe막의 구조적 및 전기적 특성)

  • Park, Ki-Cheol;Ma, Tae-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.23 no.10
    • /
    • pp.776-781
    • /
    • 2010
  • CdSe films were deposited on glass substrates (CdSe/glass) by thermal evaporation. Substrate temperature was lowered by cooling substrate holder with liquid nitrogen. Substrate temperatures were $200^{\circ}C$, $0^{\circ}C$ and $-40^{\circ}C$. The crystallographic properties and surface morphologies of the CdSe/glass films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The optical and electrical properties of the films were investigated by dependence of energy gap, photosensitivity and resistivity on the substrate temperature. CdSe/glass showed energy gap of ~1.72 eV regardless of substrate temperature. The resistivity of the films decreased to $0.5{\Omega}cm$ by lowering the substrate temperature to $-40^{\circ}C$. The CdSe/glass films prepared at $0^{\circ}C$ showed the highest photosensitivity among the films in this study.

Humidity Sensing Characteristics of TiO2 Thin Films Fabricated by R.F.Sputtering Method (R.F.스퍼터링법에 의해 제작된 TiO2 박막의 습도감지특성)

  • You, Do-Hyun
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.62 no.7
    • /
    • pp.974-979
    • /
    • 2013
  • $TiO_2$ thin films are fabricated using R.F.sputtering method. $TiO_2$ thin films are coated on $Al_2O_3$ substrate printed IDE(interdigitated electrode). Impedance of thin films decreases according to increase relative humidity and it increases according to decrease measuring frequency. When substrate temperature is room temperature, impedance of thin films is from 45.68[MHz] to 37.76[MHz] within the limits from 30[%RH] to 75[%RH] at 1[kHz]. Whereas when substrate temperature is 100[$^{\circ}C$], impedance of thin films is from 692[kHz] to 539[kHz] within the limits from 30[%RH] to 75[%RH] at 1[kHz]. Impedance variation of thin films is bigger in low frequency regions than in high frequency regions. When substrate temperature is 100[$^{\circ}C$], impedance of thin films is lower than that of room temperature.