• Title/Summary/Keyword: Susceptor

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Susceptor design by numerical analysis in horizontal CVD reactor

  • Lee, Jung-Hun;Yoo, Jin-Bok;Bae, So-Ik
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.15 no.4
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    • pp.135-140
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    • 2005
  • Thermal-fluid analysis was performed to understand the thermal behavior in the horizontal CVD reactor thereby to design a susceptor which has a uniform deposition rate during silicon EPI growing. Four different types of susceptor designs, standard (no hole susceptor), hole $\sharp$1 (240 mm), hole $\sharp$2 (150 mm) and hole $\sharp$3 (60 mm), were simulated by CFD (Computational Fluid Dynamics) tool. Temperature, gas flow, deposition rate and growth rate were calculated and analyzed. The degree of flatness of EPI wafer loaded on the susceptor was computed in terms of silicon growth rate. The simulation results show that the temperature and thermal distribution in the wafer are greatly dependent on inner diameter of hole susceptor and demonstrate that the introduction of hole in the susceptor can degrade wafer flatness. Maximum temperature difference appeared around holes. As the diameter of the hole decreases, flatness of the wafer becomes poor. Among the threes types of susceptors with the hole, optimal design which resulted a good uniform flatness ($5\%$) was obtained when using hole $\sharp$1.

Mini Review: A Current Status of Microwave Susceptor Packaging (전자레인지 서셉터 패키징 기술개발 현황)

  • Lee, Wooseok;Choi, Jungwook;Song, Hyuk-Hwan;Ko, Seonghyuk
    • KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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    • v.26 no.3
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    • pp.133-138
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    • 2020
  • As HMR (home meal replacement) food market grows rapidly, a new packaging with more HMR specialized functions is highly required to promote consumers' convenience. A susceptor is defined as a material generating heat by absorbing electromagnetic energy such typically as radiofrequency or microwave radiation. In microwave cooking, susceptors are made of conductive metal thin film deposited on paper or plastic sheet and have generally been used to help crispen or brown foods by converting microwave energy into heat. This mini review article deals with current status of microwave susceptor packaging including commercial products, technical theory, types of susceptor and a test method for heating performance.

A Verification Algorithm for Temperature Uniformity of the Large-area Susceptor (대면적 서셉터의 온도 균일도 검증 알고리즘)

  • Yang, Hac Jin;Kim, Seong Kun;Cho, Jung Kun
    • Journal of the Korean Society for Precision Engineering
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    • v.31 no.10
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    • pp.947-954
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    • 2014
  • Performance of next generation susceptor is affected by temperature uniformity in order to produce reliably large-sized flat panel display. In this paper, we propose a learning estimation model of susceptor to predict and appropriately assess the temperature uniformity. Artificial Neural Networks (ANNs) and Support Vector Machines (SVMs) are compared for the suitability of the learning estimation model. It is proved that SVMs provides more suitable verification of uniformity modeling than ANNs during each stage of temperature variations. Practical procedure for uniformity estimation of susceptor temperature was developed using the SVMs prediction algorithm.

Design and Performance Test of Large-Area Susceptor for the Improvement of Temperature Uniformity (온도 균일도 향상을 위한 대면적 서셉터의 설계 및 성능 시험)

  • Yang, Hac Jin;Kim, Seong Kun;Cho, Jung Kun
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.16 no.6
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    • pp.3714-3721
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    • 2015
  • Although sheath-type heating line is generally used for susceptor heater, performance deterioration problems in temperature uniformity occurs in the case of large scale and high temperature condition. We developed new design and prototype of the susceptor using sheet metal to provide performance improvement in temperature uniformity. Temperature uniformity below 1.4% in the surface temperature condition of $450^{\circ}C$ was verified in the susceptor prototype. Also we developed Kernel regression algorithm to estimate measured temperature using temperature learning data. The reliability of the measured temperature uniformity was confirmed by comparative analysis between predicted data and measured data.

EFFECTS OF SHOWERHEAD DIAMETERS ON THE FLOWFIELDS IN A RF-PECVD REACTOR (CVD 반응기 내에서의 유동장에 대한 샤워헤드 지름의 영향에 대한 수치적 연구)

  • Kim, You-Jae;Kim, Youn-J.
    • Proceedings of the KSME Conference
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    • pp.1475-1480
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    • 2004
  • Plasma Enhanced Chemical Vapor Deposition (PECVD) process uses unique property of plasma to modify surfaces and to achieve the high deposition rates. In this study, a vertical thermal RF-PECVD (Radio Frequency-PECVD) reactor is modeled to investigate thermal flow and the deposition rates with various shapes of the showerhead. The showerhead in the CVD reactor has the shape of a ring and gases are injected in parallel with the susceptor, which is a rotating disk. In order to achieve the high deposition rates, we have simulated the thermal flow fields in the reactor with several showerhead models. Especially the effects of the number of injection holes and the rotating speed of the susceptor are studied. Using a commercial code, CFDACE, which uses FVM (Finite Volume Method) and SIMPLE algorithm, governing equations have been solved for the pressure, mass-flow rates and temperature distributions in the CVD reactor. With the help of the Nusselt number and Sherwood number, the heat and mass transfers on the susceptor are investigated. In order to characteristics of measure the flatness of the layer, furthermore, the relative growth rate (RGR) is considered.

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Effect of inlet configuration on the growth rate of GaN layer in a MOCVD reactor (MOCVD 반응로내 GaN 성장에 미치는 입구형상의 영향)

  • Yun, Sung-Kyu;Baek, Byung-Joon;Pak, Bock-Choon
    • Proceedings of the KSME Conference
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    • pp.67-72
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    • 2003
  • Numerical calculation has been performed to investigate the effect of inlet configuration on the growth rate of GaN layer on the heated susceptor. The conventional single inlet, where the gas is mixed by force in the inlet, is compared with separated flow inlet. Two-parallel gas flow $H_{2}$ and $NH_{3}$ are separated by a plate with finite length which are also parallel to the susceptor. The effect of separated plate length, carrier gas and flow rate of each precursor on the mixing of reactant gases and growth rate were investigated. Furthermore the three dimensional model is employed to predict the transverse variation of growth rate.

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Induction Heating of Cylinderical MoSi2-based Susceptor (실린더형 MoSi2계 발열체의 유도가열 적용)

  • Lee, Sung-Chul;Kim, Yo Han;Myung, Jae-ha;Kim, Bae-Yeon
    • Korean Chemical Engineering Research
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    • v.57 no.4
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    • pp.553-558
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    • 2019
  • In present study, the cylindrical susceptor by the slip casting method was designed to apply high-temperature induction heating by using $(Mo,W)Si_2$ ceramics. $MoSi_2$-based materials were synthesized by SHS (Self-propagating High-temperature Synthesis) method. The phase and crystal structure of $MoSi_2$-based materials were confirmed by XRD analysis. The shape of cylindrical mold was synthesized for various thickness by using the slip casting method. Finally, the susceptor for induction heating was processed by sintering and heat treatment to form $SiO_2$ layer, which was confirmed on the surface of susceptor by SEM/EDS analysis. To evaluate the heating performance of $(Mo,W)Si_2$ cylinder susceptor, we measured the maximum surface temperature and heating rate in comparison with the rod heating element under constantly applied power. The induction heating of the $(Mo,W)Si_2$ cylinder showed excellent heating performance, reaches the maximum temperature of $1457^{\circ}C$, with the average heating rate of $19^{\circ}C/s$ at 2 kW

Numerical Analysis for Optimization of Film Uniformity and Deposition Grow Rate in the Vertical Cylindric Reactor (수직 원통형 CVD 반응로에서 박막의 균일성과 증착률 최적화에 대한 수치해석적 연구)

  • Kim, Jong-Hui;Kim, Hong-Je;O, Seong-Mo;Lee, Geon-Hwi;Lee, Bong-Gu
    • Journal of the Korean Society for Precision Engineering
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    • v.19 no.8
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    • pp.92-99
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    • 2002
  • This work investigated the optimal condition for an uniform deposition growth rate in the vertical cylindric CVD chamber. Heat transfer, surface chemical reaction and mass diffusion in the flow field of CVD chamber h,id been computed using Fluent v5.3 code. A SIMPLE based finite Volume Method (FVM) was adopted to solve the fully elliptic equations for momentum, temperature and concentration of a chemical species. The numerical analysis results show good agreements with the measurements obtained by N. Yoshikawa. The results obtained by the numerical analysis showed that the film growth rate in the center of a susceptor is increasing, as the inner flow approaches to the forced convection. To the contrast, as it approaches to the natural convection, that in the outside of a susceptor is increasing. As the Reynolds number increases, the uniformity may not hold due to the larger temperature gradient at a susceptor surface. Therefore, when the temperature gradient on the surface of a susceptor is zero, the film growth rate becomes uniform on most surface.

Study of Temperature Uniformity Improvement of Inductive Heating in MOCVD Systems to Deposit White LED (백색 LED 증착용 MOCVD 장치에서 유도가열을 이용한 기판의 온도 균일도 향상에 관한 연구)

  • Hong, Kwang-Ki;Yang, Won-Kyun;Joo, Jung-Hoon;Lee, Seung-Ho;Lee, Tae-Wan
    • Journal of the Korean institute of surface engineering
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    • v.43 no.6
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    • pp.304-308
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    • 2010
  • Deposition temperature uniformity of GaN based MQW (multiple quantum well) layers is an important key which affects the wavelength uniformity of white LEDs. Temperature uniformity was assessed by infrared images for both cases of a static and a rotating susceptor. Rotating the susceptor at 2.5 rpm over the induction heater gave 4.3% of temperature non-uniformity. Temperature distribution of the graphite susceptor over the induction heater was numerically modelled and agreed with experimental results.

Silicon Single Crystal Growth by Continuous Crystal Growth Method (연속성장법에 의한 Silicon 단결정 연속성장)

  • 인서환;최성철
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.3 no.2
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    • pp.117-124
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    • 1993
  • It was found that the basic principle of continuous crystal growth method was following as; the powder supplied from the feeding system is molten in the graphite crucible under the ambient gas. After forming the molten zone in the lower part of the crucible, the seed crystal is deeped into the melt and pulled down with the rotation so that the melt crystallized from the seed. When the lowering rate, rotation rate, feeding rate and temperature are correct, the single crystal can grow. The critical melt level, the feeding rate, the growth rate, the change of the shape of molten zone by the graphite susceptor and crucible, the position of work coil, the balance between the gravitational force of melt and the centrifugal force originated from the rotation of seed which are the variables of the crystal growth and the sintering phenomenon of melt surface were researched.

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