• Title/Summary/Keyword: UV pico-second laser

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Study on low-k wafer engraving processes by using UV pico-second laser (Low-k 웨이퍼 레이저 인그레이빙 특성에 관한 연구)

  • Nam, Gi-Jung;Moon, Seong-Wook;Hong, Yoon-Seok;Bae, Han-Seong;Kwak, No-Heung
    • Proceedings of the Korean Society of Laser Processing Conference
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    • pp.128-132
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    • 2006
  • Low-k wafer engraving process has been investigated by using UV pico-second laser with high repetition rate. Wavelength and repetition rate of laser used in this study are 355nm and 80MHz, respectively. Main parameters of low-k wafer engraving processes are laser power, work speed, assist gas flow rate, and protective coating to eliminate debris. Results show that engraving qualities of low-k layer by using UV pico-second pulse width and high repetition rate had better kerf edge and higher work speed, compared to one by conventional laser with nano-second pulse width and low repetition rate in the range of kHz. Assist gas and protective coating to eliminate debris gave effects on the quality of engraving edge. Total engraving width and depth are obtained less than $20{\mu}m$ and $10{\mu}m$ at more than 500mm/sec work speed, respectively. We believe that engraving method by using UV pico-second laser with high repetition rate is useful one to give high work speed of laser material process.

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A Study of Low-k Wafer Engraving Processes by Using Laser with Pico-second Pulse Width (자외선 피코초 레이저를 이용한 Low-k 웨이퍼 인그레이빙 특성에 관한 연구)

  • Moon, Seong-Wook;Bae, Han-Seong;Hong, Yun-Suk;Nam, Gi-Jung;Kwak, No-Heung
    • Journal of the Semiconductor & Display Technology
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    • v.6 no.1
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    • pp.11-15
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    • 2007
  • Low-k wafer engraving process has been investigated by using UV pico-second laser with high repetition rate. Wavelength and repetition rate of laser used in this study are 355 nm and 80 MHz, respectively. Main parameters of low-k wafer engraving processes are laser power, work speed, assist gas flow, and protective coating to eliminate debris. Results show that engraving qualities of low-k layer by using a laser with UV pico-second pulse width and high repetition rate had better kerf edge and higher work speed, compared to one by conventional laser with nano-second pulse width and low repletion rate in the range of kHz. Assist gas and protective coating to eliminate debris gave effects on the quality of engraving edge. Total engraving width and depth are obtained less than $20\;{\mu}m$ and $10\;{\mu}m$ at more than 500 mm/sec work speed, respectively. We believe that engraving method by using UV pico-second laser with high repetition rate is useful one to give high work speed in laser material process.

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