• Title/Summary/Keyword: thin film

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Alignment Effect of a Nematic Liquid Crystal on Deposited SiOx Thin-Film Surface with e-beam Evaporation

  • Oh, Yong-Cheul;Lee, Dong-Gyu
    • Transactions on Electrical and Electronic Materials
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    • v.7 no.6
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    • pp.305-308
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    • 2006
  • We have studied liquid crystal (LC) aligning capabilities for homeotropic alignment and the control of tilt angles on the $SiO_{x}$ thin film by electron beam evaporation method. A high tilt angle of about $86.5^{\circ}$ was obtained, and also the suitable tilt angle of the NLC on the $SiO_{x}$ thin film at $20{\sim}50\;nm$ thickness with e-beam evaporation can be achieved. The uniform LC alignment on the $SiO_{x}$ thin film surfaces with electron beam evaporation can be achieved. It is considerated that the LC alignment on the $SiO_{x}$ thin film by electron beam evaporation is attributed to elastic interaction between LC molecules and micro-grooves at the $SiO_{x}$ thin film surface created by evaporation.

Sol-gel Spin-coating of ZnO Co-doped with (F, Ga) as A Transparent Conducting Thin Film ((F, Ga) 코도핑된 ZnO 투명 전도 박막의 솔-젤 제조와 특성)

  • Nam, Gil Mo;Kwon, Myoung Seok
    • Journal of the Semiconductor & Display Technology
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    • v.13 no.1
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    • pp.91-95
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    • 2014
  • (F,Ga) co-doped ZnO thin film on glass substrate was fabricated via a simple non-alkoxide sol-gel spin-coating. Contrary to the F single doped ZnO thin film, the (F,Ga) co-doped thin film showed a significant reduce in electrical resistivity after a second post-heat-treatment in reducing environment. The resulting decrease in electrical resistivity with Ga co-doping is considered to be resulted from the increases both carrier density and mobility. The optical transmittance of the (F,Ga) co-doped thin film in the visible range showed higher transmittance with Ga co-doping compared with F single doped ZnO thin film.

Electromigration Characteristics in PSG/SiO$_2$ Passivated Al-l%Si Thin Film Interconnections

  • Kim, Jin-Young
    • Journal of Korean Vacuum Science & Technology
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    • v.7 no.2
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    • pp.39-44
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    • 2003
  • Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to a quarter micron and below, which results in the high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in PSG(phosphosilicate glass)/SiO$_2$ passivated Al-l%Si thin film interconnections. Straight line patterns, wide and narrow link type patterns, and meander type patterns, etc. were fabricated by a standard photholithography process. The main results are as follows. The current crowding effects result in the decrease of the lifetime in thin film interconnections. The electric field effects accelerate the decrease of lifetime in the double-layered thin film interconnections. The lifetime of interconnections also depends upon the current conditions of P.D.C.(pulsed direct current) frequencies applied at the same duty factor.

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Orientation Characteristics of AIN Thin Film using RF Magnetron Sputtering wish Incident Angle (입사각을 가진 RF 마그네트론 스퍼터링법으로 증착한 AIN 박막의 배향 특성)

  • 박영순;김덕규;송민종;박춘배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.395-398
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    • 2000
  • Reactive radio frequency (RF)magnetron sputter with incident angle has been used to deposit AlN thin film on a crystalline Si substrate. (002)Preferred orientation of AlN thin film has been obtained at low sputtering pressure. Also it has been shown that depostion rate of AIN thin film is affected by fraction Ar and $N_2$ partial pressure. But substrate temperature didn't affect depostion rate of AIN thin film . As sputtering pressure increased preferred orientation degraded. The internal stress changed from tensile stress to compressive stress as fraction of $N_2$ partial pressure increased. At low nitrogen partial pressure cermet$^{[1]}$ AIN thin film is obtained.

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Effects of Substrate Hardness on the Hardness and Adhesion of TiN Deposited by R.F. PACVD (R.F. PACD에 의하여 증착된 TiN의 경도와 밀착력에 미치는 모재 경도의 영향)

  • Kim, S.K.;Kim, M.I.
    • Journal of the Korean Society for Heat Treatment
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    • v.4 no.1
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    • pp.19-29
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    • 1991
  • This study was to investigate the influence of the substrate hardness on the hardness and adhesion of TiN thin film deposited by R.F. PACVD. Although the substrate hardness changed, chemical composition, stoichiometry and structure of TiN thin film did not change. ISE index was 1.96-1.99 for the substrate and was 1.57-1.79 for TiN thin film. And ISE index of TiN thin film was inverse proportion to the substrate hardness. When the substrate hardness was low, TiN thin film had many cracks around the indentation. But as the substrate hardness increased, TiN thin film had a few cracks and the deformation was limited within indentation. In having measured the adhesion of TiN thin film by SAT, the critical load (Lc) generally increased as the substrate hardness decreased.

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Synthesis and Absorption Spectra of 1,4-Diketo-3,6-Diphenyl-Pyrrolo-[3,4c]-Pyrrole (1,4-Diketo-3,6-Diphenyl-Pyrrolo-[3,4c]-Pyrrole(DPP)계 유기안료의 합성 및 흡수스펙트라)

  • 김성훈
    • Journal of the Korean Graphic Arts Communication Society
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    • v.14 no.1
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    • pp.1-15
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    • 1996
  • In this paper, the preparation of lead zirconium titanate(PZT) thin film by sol-gel processing was descried. Thin film coated with thickness of 4${\mu}{\textrm}{m}$ on the stainless steel substrates using the multiple spin-coating process. The crystalline phases of PZT powder and film were investigated by X-ray diffraction pattern and PZT thin film has perovskite structure over 600 C annealing temperature. Corona charging characteristics of the ferroelectric PZT thin film at 600 C were investigated by electrophotographic measurement. A difference in the charging characteristics between positive and negative corona charging was found. The charge acceptance depended in the polarity of corona and the poling of film. According to the D-E hysteresis measurment, PZT thin film can be poled by corona charging without use of top electrode. The remnant polarization in the PZT thin film is generally in the order of 48$\mu$C/$\textrm{cm}^2$. From this results, the ferroelectric PZT thin film will be possible to apply for the add-on type imaging formation.

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A study on the crystallographic properties of ZnO thin films for FBAR (FBAR용 ZnO 박막의 결정학적 특성에 관한 연구)

  • Keum, M.J.;Park, W.H.;Yoon, Y.S.;Choe, Hyeong-Uk;Shin, Y.H.;Choe, Dong-Jin;Kim, K.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.703-706
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    • 2002
  • Piezoelectric thin film such as ZnO and AlN can be applicable to FBAR (Film Bulk Acoustic Resonator) device of thin film type and FBAR can be applicable to MMIC. The characteristic of FBAR device is variable according to the deposition conditions of piezoelectric thin film when preparation of thin film by sputtering method. In this study, we prepared ZnO thin film for FBAR using Facing Targets Sputtering apparatus which can be deposited fine Quality thin film because temperature increase of substrate due to the bombardment of high-energy particles can be restrained. And crystalline and c-axis preferred orientation of ZnO thin film with deposition conditions was investigated by XRD.

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Bottom Gate Microcrystalline Silicon TFT Fabricated on Plasma Treated Silicon Nitride

  • Huang, Jung-Jie;Chen, Yung-Pei;Lin, Hung-Chien;Yao, Hsiao-Chiang;Lee, Cheng-Chung
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.218-221
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    • 2008
  • Bottom-gate microcrystalline silicon thin film transistors (${\mu}c$-Si:H TFTs) were fabricated on glass and transparent polyimide substrates by conventional 13.56 MHz RF plasma enhanced chemical vapor deposition at $200^{\circ}C$. The deposition rate of the ${\mu}c$-Si:H film is 24 nm/min and the amorphous incubation layer near the ${\mu}c$-Si:H/silicon nitride interface is unobvious. The threshold voltage of ${\mu}c$-Si:H TFTs can be improved by $H_2$ or $NH_3$ plasma pretreatment silicon nitride film.

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A study on the Deposition Characteristics of AIN Thin Films by using RF Sputtering (RF 스퍼터링을 이용한 AIN 박막의 증착특성에 관한 연구)

  • 이민건;장동훈;강성준;윤영섭
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.1049-1052
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    • 2003
  • This study shows the change of the structural characteristic of AIN thin film deposition with the change of the deposition conditions such as Ar/$N_2$ gas ratio, operating pressure in chamber, and the distance between substrate and target in RF Magnetron Sputtering. The orientation and surface roughness of AIN thin film are studied by using XRD and AFM and the thickness is measured by using STYLUS PROFILER. While we can not identify the orientation of the thin film deposited in Ar only, we can obtain the (100) orientation of the thin film with the addition of $N_2$ to Ar. Especially the thin film deposited at 10% of Ar/$N_2$ gas ratio appears to be the most (100) oriented. The (100) orientation of thin film becomes weaker as the operating pressure becomes higher. The further distance between substrate and target is stronger the (100) orientation of the thin film is. The (100) orientation becomes weaker and (002) orientation starts to appear as the distance is shorter.

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