Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)

The Korean Vacuum Society (한국진공학회)
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Photoreflectance study of stress in GaAs/Si structure

  • S. W. ppark (Deppt. of information & communications, K-JIST.) ;
  • Kim, J.W. (Deppt. of information & communications, K-JIST.) ;
  • pp.W.Yu (Deppt. of information & communications, K-JIST.)
  • Published : 1998.02.01
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Abstract

Photoreflectance (pR) measurement h have been employed to study the uniformity of G GaAs!Si 3" wafer. The PR shows the energy of l light and heavy hole even at room temperature. F From the observed energy of LH and HH, it can b be seen that the center of the wafer is more s stressed than the 뼈ge. On the basis of biaxial t tensile stress the higher and lower. transitions are a attributed to heavy and light hole respectively.vely.

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