Study on Defects in 2D Materials using Atomic Resolution TEM

  • Ryu, Gyeong-Hui (Ulsan National Institute of Science and Technology) ;
  • Park, Hyo-Ju (Ulsan National Institute of Science and Technology) ;
  • Kim, Jeong-Hwa (Ulsan National Institute of Science and Technology) ;
  • Kim, Na-Yeon (Ulsan National Institute of Science and Technology) ;
  • Lee, Jong-Yeong (Ulsan National Institute of Science and Technology) ;
  • Lee, Jong-Hun (Ulsan National Institute of Science and Technology)
  • Published : 2016.02.17

Abstract

The unique properties of 2D materials significantly rely on the atomic structure and defects. Thus study at atomic scale is crucial for in-depth understanding of 2D materials and provides insights into its future applications. Using aberration-corrected transmission electron microscopes, atomic resolution imaging of individual atoms has been achieved even at a low kV. Ongoing optimization of aberration correction improves the spatial resolution better than angstrom and moreover boosts the contrast of light atoms. I present the recent progress of the study on the atomic structure and defects of monolayer and multilayer graphene, hBN and MoS2. Furthermore, the defect formation mechanisms of graphene, hexagonal boron nitride and MoS2 are discussed.

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