One step facile synthesis of Au nanoparticle-cyclized polyacrylonitrile composite films and their use in organic nano-floating gate memory applications

  • 장석재 (한국과학기술연구원 전북분원 복합소재기술연구소 소프트혁신소재연구센터) ;
  • 조세빈 (한국과학기술연구원 전북분원 복합소재기술연구소 소프트혁신소재연구센터) ;
  • 조해나 (한국과학기술연구원 전북분원 복합소재기술연구소 탄소융합소재연구센터) ;
  • 이상아 (한국과학기술연구원 전북분원 복합소재기술연구소 소프트혁신소재연구센터) ;
  • 배수강 (한국과학기술연구원 전북분원 복합소재기술연구소 소프트혁신소재연구센터) ;
  • 이상현 (한국과학기술연구원 전북분원 복합소재기술연구소 소프트혁신소재연구센터) ;
  • 황준연 (한국과학기술연구원 전북분원 복합소재기술연구소 탄소융합소재연구센터) ;
  • 조한익 (한국과학기술연구원 전북분원 복합소재기술연구소 탄소융합소재연구센터) ;
  • 왕건욱 (고려대학교 KU-KIST융합대학원) ;
  • 김태욱 (한국과학기술연구원 전북분원 복합소재기술연구소 소프트혁신소재연구센터)
  • Published : 2016.02.17

Abstract

In this study, we synthesized Au nanoparticles (AuNPs) in polyacrylonitrile (PAN) thin films using a simple annealing process in the solid phase. The synthetic conditions were systematically controlled and optimized by varying the concentration of the Au salt solution and the annealing temperature. X-ray photoelectron spectroscopy (XPS) confirmed their chemical state, and transmission electron microscopy (TEM) verified the successful synthesis, size, and density of AuNPs. Au nanoparticles were generated from the thermal decomposition of the Au salt and stabilized during the cyclization of the PAN matrix. For actual device applications, previous synthetic techniques have required the synthesis of AuNPs in a liquid phase and an additional process to form the thin film layer, such as spin-coating, dip-coating, Langmuir-Blodgett, or high vacuum deposition. In contrast, our one-step synthesis could produce gold nanoparticles from the Au salt contained in a solid matrix with an easy heat treatment. The PAN:AuNPs composite was used as the charge trap layer of an organic nano-floating gate memory (ONFGM). The memory devices exhibited a high on/off ratio (over $10^6$), large hysteresis windows (76.7 V), and a stable endurance performance (>3000 cycles), indicating that our stabilized PAN:AuNPs composite film is a potential charge trap medium for next generation organic nano-floating gate memory transistors.

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