AN ANALYTICAL DC MODEL FOR HEMTS

헴트 소자의 해석적 직류 모델

Based on the 2-dimensional charge-control simulation[4], a purely analytical model for MODFET's is proposed. In this model, proper treatment of the diffusion effect in the 2-DEG transport due to the gradual channel opening along the 2-DEG channel was made to explain the enhanced mobility and increased thershold voltage. The channel thickness and gate capacitance are experssed as functions of gate vlotage including subthreshold characteristics of the MODFET's analytically. By introducing the finite channel opening and an effective channel-length modulation, the slope of the saturation region of the I-V curves was modeled. The smooth transition of the I-V curves from linear-to-saturation region of the I-V curves was possible using the continuous Troffimenkoff-type of field-dependent mobility. Furthermore, a correction factor f was introduced to account for the finite transtition section forming between the GCA and the saturated section. This factor removes the large discrepanicies in the saturation region fo the I-V curves presicted by existing 1-dimensional models. The fitting parameters chosen in our model were found to be predictable and vary over relatively small range of values.