불순물이 심하게 첨가된 InGaP 박막의 Moss-Burstein 효과관측

Heavily unintentionally doped n-type InGaP wa grown by LPE technique. Temperature and excitation power dependence of PL measurements were carried out to investigate the first observed 2.107 eV PL peak in $In_0.5$$Ga_0.5$P. Also the unintentionally doped major impurity was found to be sulfur through XRF technique.