Abstract
FeN thin films were deposited on glass by RF diode reactive sputtering. The films were annealed in the air and in vacuum. The film annealed in the air showed sharp decrease of saturation magnetization and change of easy axis direction to hard axis direction and vice versa after $300^{\circ}C$ anneal. The coercivity decreased down to 0.5 Oe after $400^{\circ}C$ anneal. After $450^{\circ}C$ anneal, the film showed ${\varepsilon}-Fe_{2-3}N$ phase. The films annealed in vacuum showed coercivity increase after $300^{\circ}C$ anneal for the film deposited with initial substrate temperature of $35^{\circ}C$ and after $400^{\circ}C$ anneal for the film deposited with initial substrate temperatue of $170^{\circ}C$. These films showed $Fe_{16}N_{2}$ X-ray peaks after $450^{\circ}C$ anneal.