Abstract
A medium energy ion scattering spectroscopy(ME1S) system has been developed and tested.In the MEIS system a toroidal electrostatic energy analyzer(TEA) and a two dimensional position sensitivedetector(PSD) were used. The energy resolution of MEIS system was estimated to be less than $4\times 10^{-3}$ and the overall angular resolution was less than 0.3". From the MEIS spectrum of $Ta_2O_5$(300 $\AA$)/ onSi analyzedousing 60 keV $H^+$, the energy loss factor(S.1 and depth resolution were estimated to he 42 eV/$\AA$ and 9.7 $\AA$, respectively. Also Si(100) surface was analyzed using the MEIS system. A random MElSspectrum was obtained from thc Si(100) covered with native oxide layers. At the double alignment condition, MElS spectrum showed ;i Si surface peak, a oxygen peak and a carbon peak.nd a carbon peak.
이온-고체 표면 사이의 상호작용에 관한 연구를 수행하기 위하여 중 에너지 이온산 란 분광장치를 개발하였고 그 특성 평가를 수행하였다. 제작된 MEIS의 에너지 분해능은 $4\times 10^{-3}$으로 측정되었다. MEIS의 표면분석의 응용으로 60keVH+을 $Ta_2O_5$(300$\AA$)/Si에 적용하 여 에너지 손실인자와 깊이분해능을 얻은 결과는 42eV/$\AA$와 9.7$\AA$이었다. 또한, Si(100)표면 에 97.5KeV$H^+$이온을 random방향으로 입사시켜 이차원 스펙트럼을 얻었다.
